Abstract: A light-emitting diode includes a light-emitting epitaxial layer having a first surface as a light-emitting surface and a second surface opposing the first surface, a first type semiconductor layer, an active layer, and a second type semiconductor layer; a transparent dielectric layer located on the second surface and in direct contact with the light-emitting epitaxial laminated layer, and having conductive through-holes therein; a transparent conductive layer located on one side surface of the transparent dielectric layer that is distal from the light-emitting epitaxial laminated layer; and a metal reflective layer located on one side surface of the transparent conductive layer that is distal from the transparent dielectric layer; wherein the transparent dielectric layer includes a first layer and a second layer; and wherein the first layer is thicker than the second layer, and a refractivity of the first layer is less than a refractivity of the second layer.

Abstract: A light-emitting diode includes a light-emitting epitaxial layer having a first surface as a light-emitting surface and a second surface opposing the first surface, a first type semiconductor layer, an active layer, and a second type semiconductor layer; a transparent dielectric layer located on the second surface and in direct contact with the light-emitting epitaxial laminated layer, and having conductive through-holes therein; a transparent conductive layer located on one side surface of the transparent dielectric layer that is distal from the light-emitting epitaxial laminated layer; and a metal reflective layer located on one side surface of the transparent conductive layer that is distal from the transparent dielectric layer; wherein the transparent dielectric layer includes a first layer and a second layer; and wherein the first layer is thicker than the second layer, and a refractivity of the first layer is less than a refractivity of the second layer.

Abstract: The present invention provides a multi-layer film composition comprising: (i) a first layer comprising a cyclic olefin copolymer: (ii) a second layer comprising polyethylene; and (iii) a third layer comprising a polymer having a heat seal initiation temperature of no greater than about 170° C.: wherein the second layer is positioned between the first and third layers.

Abstract: A light-emitting device includes a semiconductor epitaxial structure that has a first surface and a second surface opposite to the first surface, and that includes a first type semiconductor layer, an active layer, and a second type semiconductor layer sequentially disposed in such order in a thickness direction from the first surface to the second surface. An ohmic contact layer is disposed on the second surface of the semiconductor epitaxial structure, and a light-transmissive dielectric layer is disposed on the ohmic contact layer away from the semiconductor epitaxial structure. The light-transmissive dielectric layer has a plurality of through holes. A reflection layer is disposed on the light-transmissive dielectric layer and fills the through holes so as to be electrically connected to the ohmic contact layer.

Abstract: A light-emitting device includes a semiconductor epitaxial structure, a reflection layer, and a light-transmissive dielectric structure. The semiconductor epitaxial structure has a first surface and a second surface, and includes a first semiconductor layer, an active layer, and a second semiconductor layer. The first surface is a light-exiting surface. The reflection layer is disposed on the semiconductor epitaxial structure away from the light-exiting surface, and is adapted for reflecting light emitted by the active layer. The light-transmissive dielectric structure is disposed between the reflection layer and the semiconductor epitaxial structure, and includes a first sublayer, a second sublayer, and a third sublayer. A light-emitting apparatus and a plant lighting apparatus are also provided.

Abstract: A method for producing a transferable array of light emitting devices includes forming a plurality of light emitting devices on a temporary substrate, forming at least one supporting member that is directly connected to a release layer of at least one of the light emitting devices, connecting a supporting substrate only with the at least one supporting member so that the at least one supporting member extends from the release layer of the at least one of the light emitting devices to the supporting substrate and so that the light emitting devices are spaced apart from the supporting substrate, and removing the temporary substrate. The transferable array produced by the method is also disclosed.

Abstract: A light-emitting diode includes an epitaxial structure and a first metal electrode. The epitaxial structure has a first surface and a second surface opposite thereto, and includes a first-type semiconductor layer, a light-emitting layer and a second-type semiconductor layer. The first-type semiconductor layer includes an ohmic contact layer which at least partially defines the first surface. The first metal electrode is disposed on the first surface, and includes a main electrode and auxiliary electrodes which are disposed on and electrically connected to the ohmic contact layer. The ohmic contact layer is made of AlxGayInP, where 0?x?1 or 0?y?1. In a top view of the light-emitting layer, a projection of each auxiliary electrode on the first surface is smaller than or equal to that of the ohmic contact layer on the first surface. A light-emitting divide including the light-emitting diode, and a method for manufacturing the light-emitting diode are also provided.

Abstract: A light-emitting diode device includes an epitaxial structure that contains first-type and second-type semiconductor units and an active layer interposed therebetween, a light transmittable dielectric element that is disposed on the first-type semiconductor unit opposite to the active layer and is formed with a first through hole, an adhesive layer that is disposed on the dielectric element and is formed with a second through hole corresponding in position to the first through hole, and a metal contact element that is disposed on the adhesive layer. The adhesive layer has a thickness of at most one fifth of that of the dielectric element. The metal contact element extends into the first and second through holes, and electrically contacts the first-type semiconductor unit. A method for manufacturing the LED device is also disclosed.

Abstract: A light-emitting diode includes a light-emitting epitaxial layer having a first surface as a light-emitting surface and a second surface opposing the first surface, a first type semiconductor layer, an active layer, and a second type semiconductor layer; a transparent dielectric layer located on the second surface and in direct contact with the light-emitting epitaxial laminated layer, and having conductive through-holes therein; a transparent conductive layer located on one side surface of the transparent dielectric layer that is distal from the light-emitting epitaxial laminated layer; and a metal reflective layer located on one side surface of the transparent conductive layer that is distal from the transparent dielectric layer; wherein the transparent dielectric layer includes a first layer and a second layer; and wherein the first layer is thicker than the second layer, and a refractivity of the first layer is less than a refractivity of the second layer.

Abstract: A light-emitting diode includes a light-emitting epitaxial layer having a first surface as a light-emitting surface and a second, opposing, surface, including a first type semiconductor layer, an active layer, and a second type semiconductor layer; a metal reflective layer disposed over the second surface; and a protective layer formed seamlessly on a surface of the metal reflective layer and on a side wall of the metal reflective layer.

Abstract: Methods for inhibiting impaired neurogenesis and/or synaptogenesis in neurons in a subject with or suspected of having Alzheimer's Disease (AD), methods for improving and/or slowing the decline of cognitive function after onset of neuropathology and cognitive dysfunction, which neuropathology and cognitive dysfunction are caused by AD, methods for improving and/or slowing the decline of memory before onset of symptoms of AD, methods for increasing concentration and duration of dantrolene in the brain, and methods for improving and/or slowing the decline of memory after onset of symptoms of AD, the methods comprising intranasally administering to a subject in need thereof an amount of a pharmaceutical composition comprising dantrolene effective to inhibit over-activation of N-methyl-D-aspartate (NMVDA) receptor and/or ryanodine receptor (RyR). Methods further comprise administering a therapeutically effective amount of a glutamate receptor antagonist to the subject.

Abstract: A light-emitting diode device includes an epitaxial structure that contains first-type and second-type semiconductor units and an active layer interposed therebetween, a light transmittable dielectric element that is disposed on the first-type semiconductor unit opposite to the active layer and is formed with a first through hole, an adhesive layer that is disposed on the dielectric element and is formed with a second through hole corresponding in position to the first through hole, and a metal contact element that is disposed on the adhesive layer. The adhesive layer has a thickness of at most one fifth of that of the dielectric element. The metal contact element extends into the first and second through holes, and electrically contacts the first-type semiconductor unit. A method for manufacturing the LED device is also disclosed.

Abstract: A method for producing a transferable array of light emitting devices includes forming a plurality of light emitting devices on a temporary substrate, forming at least one supporting member that is directly connected to a release layer of at least one of the light emitting devices, connecting a supporting substrate only with the at least one supporting member so that the at least one supporting member extends from the release layer of the at least one of the light emitting devices to the supporting substrate and so that the light emitting devices are spaced apart from the supporting substrate, and removing the temporary substrate. The transferable array produced by the method is also disclosed.

Abstract: A light-emitting diode includes a light-emitting epitaxial layer having a first surface as a light-emitting surface and a second, opposing, surface, including a first type semiconductor layer, an active layer, and a second type semiconductor layer; a metal reflective layer disposed over the second surface; and a protective layer formed seamlessly on a surface of the metal reflective layer and on a side wall of the metal reflective layer.

Abstract: A method of fabricating an LED includes: providing an epitaxial structure having a growth substrate, a first-type semiconductor layer, an active layer and a second-type semiconductor layer; forming an extended electrode and performing thermal treatment to form ohmic contact with the second-type semiconductor layer; providing a temporary substrate bonded with the epitaxial structure, and removing the growth substrate to expose the surface of the first-type semiconductor layer; forming an ohmic contact layer, a mirror layer and a bonding layer over the exposed surface of the first-type semiconductor layer; providing a conductive substrate bonded with the bonding layer, and removing the temporary substrate to expose part of the surface of the second-type semiconductor layer and the extended electrode; forming a roughening surface via etching of the exposed second-type semiconductor layer; and providing a bonding wire electrode forming a closed loop with the extended electrode.

Abstract: A light-emitting diode includes a light-emitting epitaxial laminated layer having a first surface and a second, opposing, surface, including an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer; an omnidirectional reflector structure formed on the second surface of the light-emitting epitaxial laminated layer, including a transparent dielectric layer located on the second surface of the light-emitting epitaxial laminated layer and having conductive holes therein; a first transparent adhesive layer on one side surface of the transparent dielectric layer that is distal from the light-emitting epitaxial laminated layer; a second transparent adhesive layer on one side surface of the first transparent adhesive layer that is distal from the transparent dielectric layer; and a metal reflective layer on one side surface of the second transparent adhesive layer that is distal from the first transparent adhesive layer.

Abstract: A light-emitting diode includes a light-emitting epitaxial laminated layer having a first surface and a second, opposing, surface, including an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer; an omnidirectional reflector structure formed on the second surface of the light-emitting epitaxial laminated layer, including a transparent dielectric layer located on the second surface of the light-emitting epitaxial laminated layer and having conductive holes therein; a first transparent adhesive layer on one side surface of the transparent dielectric layer that is distal from the light-emitting epitaxial laminated layer; a second transparent adhesive layer on one side surface of the first transparent adhesive layer that is distal from the transparent dielectric layer; and a metal reflective layer on one side surface of the second transparent adhesive layer that is distal from the first transparent adhesive layer.

Abstract: A light-emitting diode includes a light-emitting epitaxial laminated layer and an omnidirectional reflector structure. The light-emitting epitaxial laminated layer has a first surface and an opposing second surface, including an n-type semi-conductive layer, a light emitting layer and a p-type semiconductor layer.

Abstract: A light-emitting diode includes a light-emitting epitaxial laminated layer with an upper surface; an ohmic contact layer over the light-emitting epitaxial laminated layer; an expanding electrode over the ohmic contact layer; a transparent insulating layer that covers the expanding electrode and the exposed ohmic contact layer, having a hole through the transparent insulating layer in a position corresponding to the expanding electrode; and a welding wire electrode over the transparent insulating layer and coupled to the expanding electrode via the hole.

Abstract: A light-emitting diode includes a light-emitting epitaxial laminated layer with an upper surface; an ohmic contact layer over the light-emitting epitaxial laminated layer; an expanding electrode over the ohmic contact layer; a transparent insulating layer that covers the expanding electrode and the exposed ohmic contact layer, having a hole through the transparent insulating layer in a position corresponding to the expanding electrode; and a welding wire electrode over the transparent insulating layer and coupled to the expanding electrode via the hole.