Abstract: A semiconductor device with dual side source/drain (S/D) contact structures and a method of fabricating the same are disclosed. The method includes forming a fin structure on a substrate, forming a superlattice structure on the fin structure, forming first and second S/D regions within the superlattice structure, forming a gate structure between the first and second S/D regions, forming first and second contact structures on first surfaces of the first and second S/D regions, and forming a third contact structure, on a second surface of the first S/D region, with a work function metal (WFM) silicide layer and a dual metal liner. The second surface is opposite to the first surface of the first S/D region and the WFM silicide layer has a work function value closer to a conduction band energy than a valence band energy of a material of the first S/D region.

Abstract: Embodiments of an image-sensor device structure and a method of manufacturing thereof are provided. The image-sensor device structure includes a semiconductor substrate and a light-sensing region in the semiconductor substrate. The image-sensor device structure also includes an interconnect structure over the semiconductor substrate, and the interconnect structure includes a transparent dielectric layer over the light-sensing region. The transparent dielectric layer has an optical transmittance ranging from about 90% to about 97%.

Abstract: Embodiments of an image-sensor device structure and a method of manufacturing thereof are provided. The image-sensor device structure includes a semiconductor substrate and a light-sensing region in the semiconductor substrate. The image-sensor device structure also includes an interconnect structure over the semiconductor substrate, and the interconnect structure includes a transparent dielectric layer over the light-sensing region. The transparent dielectric layer has an optical transmittance ranging from about 90% to about 97%.