Abstract: A method includes receiving a substrate having a front side and a back side, forming a shallow trench in the substrate from the front side, forming a liner layer including a first dielectric material in the shallow trench, depositing a second dielectric material different from the first dielectric material on the liner layer to form an isolation feature in the shallow trench, forming an active region surrounded by the isolation feature, forming a gate stack on the active region, forming a source/drain (S/D) feature on the active region and on a side of the gate stack, thinning down the substrate from the back side such that the isolation feature is exposed, etching the active region to expose the S/D feature from the back side to form a backside trench, and forming a backside via feature landing on the S/D feature and surrounded by the liner layer.

Abstract: A semiconductor device includes a fin-shaped structure on the substrate, a shallow trench isolation (STI) around the fin-shaped structure, a single diffusion break (SDB) structure in the fin-shaped structure for dividing the fin-shaped structure into a first portion and a second portion; a first gate structure on the fin-shaped structure, a second gate structure on the STI, and a third gate structure on the SDB structure. Preferably, a width of the third gate structure is greater than a width of the second gate structure and each of the first gate structure, the second gate structure, and the third gate structure includes a U-shaped high-k dielectric layer, a U-shaped work function metal layer, and a low-resistance metal layer.

Abstract: Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary semiconductor device comprises a semiconductor fin disposed over a substrate; a metal gate structure disposed over a channel region of the semiconductor fin; a first interlayer dielectric (ILD) layer disposed over a source/drain (S/D) region next to the channel region of the semiconductor fin; and a first conductive feature including a first conductive portion disposed on the metal gate structure and a second conductive portion disposed on the first ILD layer, wherein a top surface of the first conductive portion is below a top surface of the second conductive portion, a first sidewall of the first conductive portion connects a lower portion of a first sidewall of the second conductive portion.

Abstract: A semiconductor structure has a frontside and a backside. The semiconductor structure includes an isolation structure at the backside; one or more transistors at the frontside, wherein the one or more transistors have source/drain epitaxial features; two metal plugs through the isolation structure and contacting two of the source/drain electrodes from the backside; and a dielectric liner filling a space between the two metal plugs, wherein the dielectric liner partially or fully surrounds an air gap between the two metal plugs.

Abstract: A method includes forming a dummy gate structure over a substrate; forming a source/drain structure over the substrate; replacing the dummy gate structure with a metal gate structure; forming a protection cap over the metal gate structure; forming a source/drain contact over the source/drain structure; performing a selective deposition process to form a first etch stop layer on the protection cap, in which the selective deposition process has a faster deposition rate on the protection cap than on the source/drain contact; depositing a second etch stop layer over the first etch stop layer the source/drain contact; etching the second etch stop layer to form an opening; and forming a via contact in the opening.

Abstract: The present invention provides a composite ball with high wear resistance and waterproofness, which comprises a bladder layer, an attached sheet layer, and a protective layer, the bladder layer comprises a solid ball filled with an elastic material, the attached sheet layer comprises an upper attached sheet layer and a lower attached sheet layer, and the attached external surfaces of the upper attached sheet layer and the lower attached sheet layer are also covered by the protective layer which is molded by injecting the elastic material. As the present invention adopts the injection molding method to form the protective layer on the surface of the attached sheet layer, the present invention has special waterproof and wear-resisting properties in comparison with conventional balls.

Abstract: The utility model discloses a multilayer composite high-elastic environmentally-friendly ball structure which comprises a base layer, a first coating layer, a second coating layer, a third coating layer and a fourth coating layer, wherein both the base layer and the first coating layer are formed by splicing a number of pieces into a hollow spherical structure, and a contact surface of two adjacent spliced pieces is a stepped surface in a “Z” shape or a concave-convex fitting surface in a “U” shape. The utility model have the advantages of simple manufacturing process, novel design, high stability, high reliability, high elasticity and long service life.

Abstract: An elastic solid ball structure of the present invention includes at least a thermoplastic polyurethane foam sphere center and a first adhesive layer, a first spherical lamina, a second adhesive layer, and a second spherical lamina sequentially disposed on the external surface of the thermoplastic polyurethane foam sphere center. The overall diameter of the elastic solid ball structure is 8 cm-26 cm. In addition, at least one protruding portion or at least one indentation portion is formed on the external surface of the thermoplastic polyurethane foam sphere center, thereby forming an irregular circular surface thereon. The described structural design provides the elastic solid ball structure of the present invention with advantages including good elasticity, a long serviceable life, permanently dispensing with the need to inflate, and eliminating having to re-inflate the ball structure.

Abstract: An elastic solid ball structure disclosed in the present invention consists of at least a thermoplastic polyurethane foam sphere center formed from thermoplastic polyurethane foam; and a first adhesive layer, a first spherical lamina, a second adhesive layer, and a second spherical lamina sequentially disposed on the external surface of the thermoplastic polyurethane foam sphere center; wherein the overall diameter of the elastic solid ball structure is 8 cm˜26 cm. Moreover, at least one surface of the second spherical lamina can be additionally provided with printed layers. Accordingly, the aforementioned structural design provides the present invention with advantages including design originality, good elasticity, a long serviceable life, permanently dispensing with the need to inflate, and eliminating the need to re-inflate, as well as saving on the need to purchase an inflating device.