Abstract: This disclosure provides a radio frequency front-end circuit and a mobile terminal. The circuit includes: a gating switch, separately connected to a first antenna, a second antenna, and a radio frequency circuit module; and a double-pole double-throw switch, separately connected to the gating switch, a third antenna, a fourth antenna, and a first radio frequency circuit, where the radio frequency circuit module is connected to a first target antenna in the first and second antennas via the gating switch, and receives and/or transmits a signal with the first target antenna; or the radio frequency circuit module is connected to a second target antenna in the third and fourth antennas via the gating switch and the double-pole double-throw switch, and receives and/or transmits a signal with the second target antenna; the first radio frequency circuit is connected to one of the third and fourth antennas via the double-pole double-throw switch.

Abstract: A radio frequency front-end circuit and a mobile terminal are provided. The circuit includes: a first signal transmitting circuit and a second signal transmitting circuit; a first changeover switch and a second changeover switch; and a first double-pole double-throw switch. The first signal transmitting circuit is closed through the first double-pole double-throw switch and the first changeover switch and transmits a signal through a first antenna or second antenna, or is closed through the first double-pole double-throw switch and the second changeover switch and transmits a signal through a third antenna or fourth antenna. The second signal transmitting circuit is closed through the first double-pole double-throw switch and the first changeover switch and transmits a signal through the first antenna or the second antenna, or is closed through the first double-pole double-throw switch and the second changeover switch and transmits a signal through the third antenna or the fourth antenna.

Abstract: Package structures and methods for manufacturing the same are provided. The package structure includes a first bump structure formed over a first substrate. The first bump structure includes a first pillar layer formed over the first substrate and a first barrier layer formed over the first pillar layer. In addition, the first barrier layer has a first protruding portion laterally extending outside a first edge of the first pillar layer. The package structure further includes a second bump structure bonded to the first bump structure through a solder joint. In addition, the second bump structure includes a second pillar layer formed over a second substrate and a second barrier layer formed over the second pillar layer. The first protruding portion of the first barrier layer is spaced apart from the solder joint.

Abstract: A method for forming a package structure includes forming an under bump metallization (UBM) layer over a metal pad and forming a photoresist layer over the UBM layer. The method further includes patterning the photoresist layer to form an opening in the photoresist layer. The method also includes forming a first bump structure over the first portion of the UBM layer. The first bump structure includes a first barrier layer over a first pillar layer. The method includes placing a second bump structure over the first bump structure. The second bump structure includes a second barrier layer over a second pillar layer. The method further includes reflowing the first bump structure and the second bump structure to form a solder joint between a first inter intermetallic compound (IMC) and a second IMC.

Abstract: This disclosure provides a radio frequency front-end circuit and a mobile terminal. The circuit includes: a gating switch, separately connected to a first antenna, a second antenna, and a radio frequency circuit module; and a double-pole double-throw switch, separately connected to the gating switch, a third antenna, a fourth antenna, and a first radio frequency circuit, where the radio frequency circuit module is connected to a first target antenna in the first and second antennas via the gating switch, and receives and/or transmits a signal with the first target antenna; or the radio frequency circuit module is connected to a second target antenna in the third and fourth antennas via the gating switch and the double-pole double-throw switch, and receives and/or transmits a signal with the second target antenna; the first radio frequency circuit is connected to one of the third and fourth antennas via the double-pole double-throw switch.

Abstract: A radio frequency front-end circuit and a mobile terminal are provided. The circuit includes: a first signal transmitting circuit and a second signal transmitting circuit; a first changeover switch and a second changeover switch; and a first double-pole double-throw switch. The first signal transmitting circuit is closed through the first double-pole double-throw switch and the first changeover switch and transmits a signal through a first antenna or second antenna, or is closed through the first double-pole double-throw switch and the second changeover switch and transmits a signal through a third antenna or fourth antenna. The second signal transmitting circuit is closed through the first double-pole double-throw switch and the first changeover switch and transmits a signal through the first antenna or the second antenna, or is closed through the first double-pole double-throw switch and the second changeover switch and transmits a signal through the third antenna or the fourth antenna.

Abstract: A method for forming a package structure includes forming an under bump metallization (UBM) layer over a metal pad and forming a photoresist layer over the UBM layer. The method further includes patterning the photoresist layer to form an opening in the photoresist layer. The method also includes forming a first bump structure over the first portion of the UBM layer. The first bump structure includes a first barrier layer over a first pillar layer. The method includes placing a second bump structure over the first bump structure. The second bump structure includes a second barrier layer over a second pillar layer. The method further includes reflowing the first bump structure and the second bump structure to form a solder joint between a first inter intermetallic compound (IMC) and a second IMC.

Abstract: A package structure is provided. The package structure includes a first bump structure formed over a substrate, a solder joint formed over the first bump structure and a second bump structure formed over the solder joint. The first bump structure includes a first pillar layer formed over the substrate and a first barrier layer formed over the first pillar layer. The first barrier layer has a first protruding portion which extends away from a sidewall surface of the first pillar layer, and a distance between the sidewall surface of the first pillar layer and a sidewall surface of the first barrier layer is in a range from about 0.5 ?m to about 3 ?m. The second bump structure includes a second barrier layer formed over the solder joint and a second pillar layer formed over the second barrier layer, wherein the second barrier layer has a second protruding portion which extends away from a sidewall surface of the second pillar layer.

Abstract: A nozzle auto-cleaning device and a nozzle auto-cleaning method are disclosed. The nozzle auto-cleaning device includes a base and a cleaning piece feeding unit disposed on the base, the base has a bearing surface on which the cleaning piece feeding unit is disposed, the cleaning piece feeding unit is configured to transport a cleaning piece installed inside the nozzle auto-cleaning device along a first direction intersected with the bearing surface so that a first portion of the cleaning piece is protruded in a direction away from the bearing surface and inserted into a nozzle, and the base is configured to move along at least one direction of the first direction, as well as a second direction and a third direction intersected in a plane of the bearing surface, so as to drive the first portion of the cleaning piece to move inside the nozzle.

Abstract: A package structure is provided. The package structure includes a first bump structure formed over a substrate, a solder joint formed over the first bump structure and a second bump structure formed over the solder joint. The first bump structure includes a first pillar layer formed over the substrate and a first barrier layer formed over the first pillar layer. The first barrier layer has a first protruding portion which extends away from a sidewall surface of the first pillar layer, and a distance between the sidewall surface of the first pillar layer and a sidewall surface of the first barrier layer is in a range from about 0.5 ?m to about 3 ?m. The second bump structure includes a second barrier layer formed over the solder joint and a second pillar layer formed over the second barrier layer, wherein the second barrier layer has a second protruding portion which extends away from a sidewall surface of the second pillar layer.

Abstract: A nozzle auto-cleaning device and a nozzle auto-cleaning method are disclosed. The nozzle auto-cleaning device includes a base and a cleaning piece feeding unit disposed on the base, the base has a bearing surface on which the cleaning piece feeding unit is disposed, the cleaning piece feeding unit is configured to transport a cleaning piece installed inside the nozzle auto-cleaning device along a first direction intersected with the bearing surface so that a first portion of the cleaning piece is protruded in a direction away from the bearing surface and inserted into a nozzle, and the base is configured to move along at least one direction of the first direction, as well as a second direction and a third direction intersected in a plane of the bearing surface, so as to drive the first portion of the cleaning piece to move inside the nozzle.

Abstract: A method of forming a thin film transistor is described. A polysilicon layer is formed over a substrate, wherein the polysilicon layer has a first region, a second region and a channel region between the first and second regions. A nitrogen doping process is carried out to dope nitrogen into the polysilicin layer. A gate insulating layer and a gate are sequentially formed over the polysilicon layer, wherein the gate is formed over the channel region. A doping process is performed so as to form a source and a drain in the first region and second region, respectively.

Abstract: A method is disclosed to make a lightly doped drain of a low-temperature poly-silicon thin film transistor. Nitrogen is implanted during steps of doping the source and the drain so as to suppress the spreading of the other types of dope so that the poly-silicon layer forms a shallow interface lightly doped drain after annealing. Implantation of nitrogen takes place before or after the other types of dope. Nitrogen is implanted to a depth no greater than that of the other types of dope. The present is simple, improves hot carrier effect and repairs flaws in the poly-silicon layer.