Abstract: A method comprising providing at least one dielectric layer above a semiconductor substrate, the at least one dielectric layer having a top surface and a bottom surface; forming a photoresist layer on the top surface of the at least one dielectric layer; providing a single photomask having at least one first pattern corresponding to a conductive via and at least one second pattern corresponding to a conductive trace; patterning the photoresist layer using the single photomask, for forming a trench in the photoresist corresponding to the conductive trace and an opening in a bottom surface of the trench corresponding to the via with a single photo exposure step; and etching the dielectric through the photoresist layer to form the trench and via therein. This application also relates to photomasks for use in the methods of this application.

Abstract: The present invention provides a method for increasing adhesion of color filters and preventing cross talk effects on a semiconductor wafer. The method first involves forming a dielectric layer on the semiconductor wafer, which covers each MOS transistor sensor formed on the surface of the semiconductor wafer. Then, a plurality of metal layers are formed on the dielectric layer, each two metal layers positioned approximately above two ends of one MOS transistor sensor. Next, a passivation layer is formed, followed by the formation of a first color filter on the passivation layer. The two ends of the first color filter are aligned approximately above the two metal layers. Thereafter, a second color filter and a third color filter are sequentially formed on the passivation layer, and portions of both the second color filter and the third color filter cover one end of the first color filter.

Abstract: The present invention provides a method for increasing the adhesion of a color filter on a semiconductor wafer. The semiconductor wafer comprises a substrate, a plurality of MOS transistor sensors positioned on the substrate, and a plurality of insulators formed between two MOS transistor sensors on the substrate. The present invention first involves forming a dielectric layer on the semiconductor wafer, which covers each MOS transistor sensor and each insulator. Thereafter, a passivation layer is formed on the dielectric layer, and a plurality of recesses is formed in the passivation layer corresponding to a MOS transistor sensor. Finally, a color filter is formed in each recess. The recess is used to increase the contact areas between the color filter and the passivation layer so as to prevent stripping of the color filter.

Abstract: The present invention provides a method for increasing the adhesion of a color filter on a semiconductor wafer. The semiconductor wafer comprises a substrate, a plurality of MOS transistor sensors positioned on the substrate, and a plurality of insulators formed between two MOS transistor sensors on the substrate. The present invention first involves forming a dielectric layer on the semiconductor wafer, which covers each MOS transistor sensor and each insulator. Thereafter, a passivation layer is formed on the dielectric layer, and a plurality of recesses is formed in the passivation layer corresponding to a MOS transistor sensor. Finally, a color filter is formed in each recess. The recess is used to increase the contact areas between the color filter and the passivation layer so as to prevent stripping of the color filter.

Abstract: The present invention provides a method for increasing adhesion of color filters and preventing cross talk effects on a semiconductor wafer. The method first involves forming a dielectric layer on the semiconductor wafer, which covers each MOS transistor sensor formed on the surface of the semiconductor wafer. Then, a plurality of metal layers are formed on the dielectric layer, each two metal layers positioned approximately above two ends of one MOS transistor sensor. Next, a passivation layer is formed, followed by the formation of a first color filter on the passivation layer. The two ends of the first color filter are aligned approximately above the two metal layers. Thereafter, a second color filter and a third color filter are sequentially formed on the passivation layer, and portions of both the second color filter and the third color filter cover one end of the first color filter.