Abstract: A diode package structure includes a substrate, at least one diode chip and an opaque encapsulating layer. The substrate has an electrically conductive layer. At least one diode chip is mounted on the substrate and electrically connected to the electrically conductive layer. The opaque encapsulating layer has a cap portion and a sidewall portion, wherein the sidewall portion is connected to and surrounds the substrate to jointly form a concave structure, the cap portion is connected between a sidewall of the diode chip and the sidewall portion, wherein a first contact vertex of the cap portion and the sidewall of the diode chip is higher than a second contact vertex of the cap portion and the sidewall portion.

Abstract: A diode package structure includes a substrate, at least one diode chip and an opaque encapsulating layer. The substrate has an electrically conductive layer. At least one diode chip is mounted on the substrate and electrically connected to the electrically conductive layer. The opaque encapsulating layer has a cap portion and a sidewall portion, wherein the sidewall portion is connected to and surrounds the substrate to jointly form a concave structure, the cap portion is connected between a sidewall of the diode chip and the sidewall portion, wherein a first contact vertex of the cap portion and the sidewall of the diode chip is higher than a second contact vertex of the cap portion and the sidewall portion.

Abstract: A photosensitive device is provided. The photosensitive device includes a sensing stack, an anti-reflective layer, an optical filter, a first electrode, and a second electrode. The sensing stack includes a first semiconductor layer, an intrinsic semiconductor layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the intrinsic semiconductor layer. The anti-reflective layer is disposed on a side of the sensing stack. The optical filter is disposed on the anti-reflective layer and blocks input light with an incident angle greater than 50 degrees. The first electrode and the second electrode are disposed on the sensing stack.

Abstract: A capacitive biosensor is provided. The capacitive biosensor includes: a transistor, an interconnect structure on the transistor, and a passivation layer on the interconnect structure. The interconnect structure includes a first metal structure on the transistor, a second metal structure on the first metal structure, and a third metal structure on the second metal structure. The third metal structure includes a first conductive layer, a second conductive layer, and a third conductive layer that are sequentially stacked. The passivation has an opening exposing a portion of the third metal structure. The capacitive biosensor further includes a sensing region on the interconnect structure. The sensing region includes a first sensing electrode and a second sensing electrode. The first sensing electrode is formed of the third conductive layer, and the second sensing electrode is disposed on the passivation layer.

Abstract: A capacitive biosensor is provided. The capacitive biosensor includes: a transistor, an interconnect structure on the transistor, and a passivation layer on the interconnect structure. The interconnect structure includes a first metal structure on the transistor, a second metal structure on the first metal structure, and a third metal structure on the second metal structure. The third metal structure includes a first conductive layer, a second conductive layer, and a third conductive layer that are sequentially stacked. The passivation has an opening exposing a portion of the third metal structure. The capacitive biosensor further includes a sensing region on the interconnect structure. The sensing region includes a first sensing electrode and a second sensing electrode. The first sensing electrode is formed of the third conductive layer, and the second sensing electrode is disposed on the passivation layer.

Abstract: A magnetoresistive device includes a magnetoresistor disposed over a substrate, a stress release structure covering a side surface of the magnetoresistor, an electrical connection structure disposed over the magnetoresistor, and a passivation layer disposed over the electrical connection structure and the stress release structure.

Abstract: A diode package structure includes a substrate, at least one diode chip and an opaque encapsulating layer. The substrate has an electrically conductive layer. At least one diode chip is mounted on the substrate and electrically connected to the electrically conductive layer. The opaque encapsulating layer has a cap portion and a sidewall portion, wherein the sidewall portion is connected to and surrounds the substrate to jointly form a concave structure, the cap portion is connected between a sidewall of the diode chip and the sidewall portion, wherein a first contact vertex of the cap portion and the sidewall of the diode chip is higher than a second contact vertex of the cap portion and the sidewall portion.

Abstract: A magnetoresistive device includes a magnetoresistor disposed over a substrate, a stress release structure covering a side surface of the magnetoresistor, an electrical connection structure disposed over the magnetoresistor, and a passivation layer disposed over the electrical connection structure and the stress release structure.

Abstract: A white light emitting device includes a blue LED chip having a dominant emission wavelength of about 440-465 nm, and a phosphor layer configured to be excited by the dominant emission wavelength of the blue LED chip. The phosphor layer includes a first phosphor having a peak emission wavelength of about 480-519 nm, a second phosphor having a peak emission wavelength of about 520-560 nm, and a third phosphor having a peak emission wavelength of about 620-670 nm. The first phosphor and the second phosphor both have a garnet structure as represented by A3B5O12:Ce, A is selected from the group consisting of Y, Lu, and a combination of thereof, and B is selected from the group consisting of Al, Ga, and a combination of thereof.

Abstract: A white light emitting device includes a blue LED chip having a dominant emission wavelength of about 440-465 nm, and a phosphor layer configured to be excited by the dominant emission wavelength of the blue LED chip. The phosphor layer includes a first phosphor having a peak emission wavelength of about 480-519 nm, a second phosphor having a peak emission wavelength of about 520-560 nm, and a third phosphor having a peak emission wavelength of about 620-670 nm. The first phosphor and the second phosphor both have a garnet structure as represented by A3B5O12:Ce, A is selected from the group consisting of Y, Lu, and a combination of thereof, and B is selected from the group consisting of Al, Ga, and a combination of thereof.

Abstract: A white light source device includes a first light-emitting element, and at least one second light-emitting element. The first light-emitting element includes a first light-emitting unit and a first wavelength conversion unit, and emits a first light beam. Each of the second light-emitting elements includes a second light-emitting unit and a second wavelength conversion unit, and emits a second light beam. An emission spectrum of the second light beam is different from an emission spectrum of the first light beam. The first light beam and the second light beam are mixed into a white light beam, and a color fidelity index of the white light beam is greater than 90.

Abstract: A white light source device includes a first light-emitting element, and at least one second light-emitting element. The first light-emitting element includes a first light-emitting unit and a first wavelength conversion unit, and emits a first light beam. Each of the second light-emitting elements includes a second light-emitting unit and a second wavelength conversion unit, and emits a second light beam. An emission spectrum of the second light beam is different from an emission spectrum of the first light beam. The first light beam and the second light beam are mixed into a white light beam, and a color fidelity index of the white light beam is greater than 90.

Abstract: A light-emitting diode (LED) package frame is provided, including a leadframe and an insulating member. The leadframe includes a first electrode and a second electrode separated from each other. The insulating member is disposed between the first electrode and the second electrode for insulation between the first and second electrodes, including a first protrusion and a second protrusion. The coefficient of thermal expansion of the insulating member is greater than that of the leadframe. Specifically, the first electrode and the second electrode respectively include a first recess and a second recess which abut the insulating member. The first protrusion and the second protrusion are respectively engaged with the first recess and the second recess.

Abstract: The disclosure provides a light-emitting diode (LED) package structure, including: a lead frame; at least two light-emitting diode chips having different light-emitting wavelengths disposed on the lead frame; an encapsulant disposed over the lead frame and covering the light-emitting diode chips, wherein the encapsulant has a first concave portion; and an optical glue disposed in the first concave portion, wherein the optical glue has a plurality of scattering particles to uniformly mix the lights of different wavelengths emitted by the light-emitting diode chips.