Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first well in the substrate on the first region and a second well in the substrate on the second region; removing part of the first well to form a first recess; and forming a first epitaxial layer in the first recess.

Abstract: A semiconductor device includes a metal gate on a substrate, a polysilicon layer on the metal gate, a hard mask on the polysilicon layer, and a source/drain region adjacent to two sides of the metal gate. Preferably, the metal gate includes a ferroelectric (FE) layer on the substrate, a work function metal layer on the FE layer, and a low resistance metal layer on the work function metal layer.

Abstract: A method for fabrication a nanosheet device includes providing forming a stacked layer on a substrate, having first material layers and second material layers in different materials, alternatingly stacked up. The stacked layer is patterned to a stacked fin. A dummy stack is formed on the stacked fin. An etching back process is performed with the dummy stack with spacers to etch the stacked fin and expose the substrate. Laterally etches the first material layers and the second material layers, to have indent portions. Inner spacers fill the indent portions. A first/second source/drain layer is formed on the substrate at both sides of the dummy stack. Etching process is performed to remove the dummy gate of the dummy stack and the selected one of the first material layers and the second material layers between the inner spacers. Metal layer fills between the spacers and the inner spacers.

Abstract: A semiconductor device includes a metal gate on a substrate, a polysilicon layer on the metal gate, a hard mask on the polysilicon layer, and a source/drain region adjacent to two sides of the metal gate. Preferably, the metal gate includes a ferroelectric (FE) layer on the substrate, a work function metal layer on the FE layer, and a low resistance metal layer on the work function metal layer.

Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first well in the substrate on the first region and a second well in the substrate on the second region; removing part of the first well to form a first recess; and forming a first epitaxial layer in the first recess.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming an interlayer dielectric (ILD) layer around the gate structure; removing the gate structure to form a first recess; forming ferroelectric (FE) layer in the first recess; forming a compressive layer on the FE layer; performing a thermal treatment process; removing the compressive layer; and forming a work function metal layer in the recess.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming an interlayer dielectric (ILD) layer around the gate structure; removing the gate structure to form a first recess; forming ferroelectric (FE) layer in the first recess; forming a compressive layer on the FE layer; performing a thermal treatment process; removing the compressive layer; and forming a work function metal layer in the recess.

Abstract: A heat dissipating pad structure of a notebook computer includes a retaining unit, a baffle wall and at least two air guide units (fans). Air can be entered from the bottom of the notebook computer. The external periphery of a ventilation hole is disposed on the baffle wall for enclosing a space area, such that the air guide unit keeps guiding air into the space area to increase the volume of air and produce a positive air pressure, and a fan installed in the notebook computer produces a negative air pressure suction, such that cold air is compressed, sucked and guided simultaneously into the computer for a heat exchange and a discharge of hot air from the interior of the computer, so as to achieve a better heat dissipating effect.