Patents by Inventor CHENGQING WEI

CHENGQING WEI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Fin field effect transistors and fabrication method thereof
    Patent number: 9613960
    Abstract: A method for forming FinFETs includes providing a semiconductor substrate having at least a first fin in a first region and at least a second fin in a second region, and a first gate structure over the first fin and a second gate structure over the second fin; forming a first stress layer on the first fin and a first cover layer on the first stress layer; forming a second stress layer on the second fin and a second cover layer on the second stress layer; performing a first potential barrier reducing ion implantation process on the first cover layer; performing a second potential barrier reducing ion implantation process on the second cover layer; forming a first metal layer and a second metal layer; and forming a first contact layer on the first cover layer and a second contact layer on the second cover layer.
    Type: Grant
    Filed: December 21, 2015
    Date of Patent: April 4, 2017
    Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
    Inventors: Yong Li, Chengqing Wei
  • FIN FIELD EFFECT TRANSISTORS AND FABRICATION METHOD THEREOF
    Publication number: 20160197075
    Abstract: A method for forming FinFETs includes providing a semiconductor substrate having at least a first fin in a first region and at least a second fin in a second region, and a first gate structure over the first fin and a second gate structure over the second fin; forming a first stress layer on the first fin and a first cover layer on the first stress layer; forming a second stress layer on the second fin and a second cover layer on the second stress layer; performing a first potential barrier reducing ion implantation process on the first cover layer; performing a second potential barrier reducing ion implantation process on the second cover layer; forming a first metal layer and a second metal layer; and forming a first contact layer on the first cover layer and a second contact layer on the second cover layer.
    Type: Application
    Filed: December 21, 2015
    Publication date: July 7, 2016
    Inventors: YONG LI, CHENGQING WEI