Patents by Inventor Cheng-shen Hsu

Cheng-shen Hsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240122078
    Abstract: A semiconductor memory device includes a substrate having a conductor region thereon, an interlayer dielectric layer on the substrate, and a conductive via electrically connected to the conductor region. The conductive via has a lower portion embedded in the interlayer dielectric layer and an upper portion protruding from a top surface of the interlayer dielectric layer. The upper portion has a rounded top surface. A storage structure conformally covers the rounded top surface.
    Type: Application
    Filed: December 18, 2023
    Publication date: April 11, 2024
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Chia-Chang Hsu, Tang-Chun Weng, Cheng-Yi Lin, Yung-Shen Chen, Chia-Hung Lin
  • Patent number: 6419804
    Abstract: A contamination-resistant thin film deposition method utilizing a reaction-type vacuum sputtering process in which an organic tetrafluoroethylene plastic and conductor substances are sputtered onto a substrate to deposit a thin film onto the substrate, with the thin film deriving its contamination-resistant capability from the anti-stick properties of the tetrafluoroethylene plastic and the anti-static properties of the conductor substances. The contamination-resistant thin film deposition method utilizes a configured tetrafluoroethylene plastic target structure that includes a negative substrate, a filiform electrode, an insulative support, a tetrafluoroethylene plastic sputtering substrate, a positive substrate, a tetrafluoroethylene plastic substrate rotating device, a magnetic field generator, and a gas input port.
    Type: Grant
    Filed: November 22, 2000
    Date of Patent: July 16, 2002
    Inventors: Cheng-Shen Hsu, Tien-Tsai Lin
  • Patent number: 6178634
    Abstract: A miniature recycle-type heat exchanger to produce recycle-type heat exchangers from high extensibility, high plasticity aluminum or copper billets (ingots) utilizing a pressure forming press to extrude lightweight, thin, and small form factor recycle-type heat exchangers. The production method includes annealing copper and aluminum billet (ingot) material, conveying the material to a vibrator for placement in an ordered arrangement, and then conveying and fixing the material onto molds in a pressure forming press for the extrusion tasks required to fabricate the heat exchanger bodies. In the final stage after shaping and determination of the fluid input direction, the bodies are placed in a vacuum sputtering machine to undergo a rough textured heat conductive microparticulate deposition process to complete the production of miniature recycle-type heat exchangers that are of very compact dimensions and lightweight, but have a large heat exchange capacity and, furthermore, a high heat transfer rate.
    Type: Grant
    Filed: April 6, 1999
    Date of Patent: January 30, 2001
    Inventors: Cheng-shen Hsu, Tien-tsai Lin