Abstract: An electrostatic discharge protection structure includes a semiconductor substrate, a gate structure disposed on the semiconductor substrate, a first well region of a first conductivity type disposed in the semiconductor substrate, a first doped region of the first conductivity type, a second doped region of a second conductivity type, a third doped region of the first conductivity type, and a fourth doped region of the second conductivity type. The first and second doped regions are disposed in the first well region and connected with each other. The second doped region is an emitter of a first bipolar junction transistor. The third and fourth doped regions are disposed in the semiconductor substrate and connected with each other. The third and second doped regions are located at two opposite sides of the gate structure in a first horizontal direction. The third doped region is an emitter of a second bipolar junction transistor.

Abstract: A semiconductor structure and method of manufacturing a semiconductor structure are provided. The semiconductor structure includes a substrate and at least one contact plug. The substrate has an epi-layer. The contact plug is formed on the epi-layer and includes a silicide cap disposed on the epi-layer; a conductive pillar disposed on the silicide cap such that the conductive pillar electrically connects to the epi-layer via the silicide cap; and a hybrid liner. The hybrid liner surrounds the conductive pillar and includes a lower portion abutting the silicide cap and having a nitride material and an upper portion abutting the conductive pillar and having an oxidized nitride material. Due to the hybrid liner, a semiconductor structure with increased capacitance and decreased resistivity can be obtained.

Abstract: An imaging lens assembly module includes an imaging lens assembly and a variable aperture module. The imaging lens assembly has an optical axis. The variable aperture module includes a light blocking sheet set, a fixed element, a movable element, and an annular light blocking portion. The light blocking sheet set includes at least two light blocking sheets, wherein the at least two light blocking sheets are mutually stacked along a circumferential direction surrounding the optical axis to form a variable aperture opening. The fixed element has a sidewall structure. The annular light blocking portion surrounds the optical axis to form a fixed aperture opening.

Abstract: Disclosure is a compound with one or more arm(s) for drug conjugation and a conjugate including the compound so as to provide high drug-to-moiety ratio and conjugate more drugs to the conjugate.

Abstract: Embodiments of the present disclosure provide a semiconductor device with backside source/drain contacts formed using a buried source/drain feature and a semiconductor cap layer formed between the buried source/drain feature and a source/drain region. The buried source/drain feature and the semiconductor cap layer enable self-aligned backside source/drain contact and backside isolation. The semiconductor cap layer functions as an etch stop layer during backside contact formation while enabling source/drain region growth without fabrication penalty, such as voids in the source/drain regions.

Abstract: Provided are FinFET devices and methods of forming the same. A FinFET device includes a substrate, a metal gate strip, gate spacers and a dielectric helmet. The substrate has fins. The metal gate strip is disposed across the fins and has a reversed T-shaped portion between two adjacent fins. The gate spacers are disposed on opposing sidewalls of the metal gate strip. A dielectric helmet is disposed over the metal gate strip.

Abstract: An apparatus and a method for neural network computation are provided. The apparatus for neural network computation includes a first neuron circuit and a second neuron circuit. The first neuron circuit is configured to execute a neural network computation of at least one computing layer with a fixed feature pattern in a neural network algorithm. The second neuron circuit is configured to execute the neural network computation of at least one computing layer with an unfixed feature pattern in the neural network algorithm. The performance of the first neuron circuit is greater than that of the second neuron circuit.

Abstract: A display device has a display area and a peripheral area, and includes an array substrate. The array substrate includes M number of pixel unit columns disposed in the display area and a first dummy electrode disposed in the peripheral area, where M is a positive integer greater than or equal to 2. The M number of pixel unit columns include a first pixel unit column to an Mth pixel unit column arranged in sequence. Each of the M number of pixel unit columns includes a plurality of pixel units arranged in sequence. The first dummy electrode is located on one side of the first pixel unit column. During a frame period, the first pixel unit column receives the first pixel signal, and the first dummy electrode receives the first dummy signal. The polarity of the first pixel signal is different from that of the first dummy signal.

Abstract: An electronic package and a manufacturing method thereof are provided, in which a first barrier body and a second barrier body are disposed respectively, and a heat dissipation structure is formed with a hole thereon. Thereby, gas in the heat dissipation structure can be discharged via the hole, so as to prevent the gas from remaining in a thermal conductive layer and affecting the heat dissipation effect.

Abstract: A method of operating a memory circuit includes generating, by a first memory cell array, a first current in response to a first voltage, generating, by a tracking circuit, a second set of leakage currents, generating, by a first current source, a second write current, and mirroring, by a first current mirror. The first current includes a first set of leakage currents and a first write current. The first current is in a first path with a second current in a second path. The second current includes the second set of leakage currents and the second write current. The first write current corresponds to the second write current. The first set of leakage currents corresponds to the second set of leakage currents. The second set of leakage currents is configured to track the first set of leakage currents of the first memory cell array.

Abstract: A temperature-corrected biochemical sensor includes an optical resonator disposed proximate a single-mode optical fiber, the optical resonator being optically coupled to the optical fiber to receive optical whispering-gallery output light; a sensor detection system arranged to receive and detect the optical whispering-gallery output light to provide sensor signals; a temperature-correcting optical system to provide a reference beam of light to be combined at least partially coherently with a return light from the resonator to provide an interference light and convert, the interference light to temperature-correction signals; a data storage device comprising temperature calibration data for at least the optical fiber and the optical resonator; and a data processing system to calculate at least one physical property of a particle in contact with the optical resonator using the sensor signals such that the calculated physical property is temperature corrected using the temperature calibration data and the temper

Abstract: A slide rail assembly includes a first rail, a second rail, an aid-sliding device, a compensating device and a third rail. The aid-sliding device is movably mounted between the first rail and the second rail. The compensating device is movably mounted on the second rail. The second rail is configured to be movably mounted on the third rail. The compensating device is configured to compensating an error of a relative position of the first rail and the second rail.

Abstract: An image sensor structure and methods of forming the same are provided. An image sensor structure according to the present disclosure includes a semiconductor substrate including a photodiode, a transfer gate transistor disposed over the semiconductor substrate and having a first channel area, a first dielectric layer disposed over the semiconductor substrate, a semiconductor layer disposed over the first dielectric layer, a source follower transistor disposed over the semiconductor layer and having a second channel area, a row select transistor disposed over the semiconductor layer and having a third channel area, and a reset transistor disposed over the semiconductor layer and having a fourth channel area. The second channel area is greater than the first channel area, the third channel area or the fourth channel area.

Abstract: A wideband antenna system includes a first metal radiation portion, having a coupling distance with a second metal radiation portion; a first feeding contact and a second feeding contact, electrically connected to the first metal radiation portion and the second metal radiation portion respectively, and close to the coupling distance; a first ground contact, electrically connected to the second metal radiation portion; a second ground contact, electrically connected to the first metal radiation portion; an impedance tuner, electrically connected to the first feeding contact, the second feeding contact, the first ground contact, the second ground contact, and a radio frequency signal source, to switch the first metal radiation portion and the second metal radiation portion; an aperture contact, electrically connected to the first metal radiation portion; and an aperture tuner, electrically connected to the aperture contact.

Abstract: A production line operation forecast method and a production line operation forecast system are provided. The production line operation forecast method includes the following steps: obtaining an online production line work-in-process map at a time point, generating candidate simulated dispatch decisions based on the online production line work-in-process map, and inferring production-line work-in-process map changes of the candidate simulated dispatch decisions at a next time point; inputting the production-line work-in-process map changes to a forecast model, such that the forecast model outputs simulated production line operation health indicators of the candidate simulated dispatch decisions at the next time point; and selecting one of the candidate simulated dispatch decisions as a scheduling dispatch decision.

Abstract: Provided is a recognition method of 3D vein pattern including the following steps. A plurality of first light beams are emitted by a recognition device to a wrist of a user. A plurality of first reflected light beams from the wrist are received by the recognition device to form a first 3D vein pattern of the wrist. Differences between the first 3D vein pattern and a wrist vein pattern of a database are compared to identify an identity or a gesture of the user. A recognition device of 3D vein pattern is also provided.

Abstract: A voltage regulator circuit is provided. The voltage regulator circuit includes a voltage regulator configured to provide an output voltage at an output terminal. A plurality of macros are connectable at a plurality of connection nodes of a connector connected to the output terminal of the voltage regulator. A feedback circuit having a plurality of feedback loops is connectable to the plurality of connection nodes. The feedback loop of the plurality of feedback loops, when connected to a connection node of the plurality of connection nodes, is configured to provide an instantaneous voltage of the connection node as a feedback to the voltage regulator. The voltage regulator is configured, in response to the instantaneous voltage, regulate the output voltage to maintain the instantaneous voltage of the connection node approximately equal to a reference voltage.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes multiple first semiconductor nanostructures over a substrate and multiple second semiconductor nanostructures over the substrate. The semiconductor device structure also includes a dielectric structure between the first semiconductor nanostructures and the second semiconductor nanostructures. The semiconductor device structure further includes a metal gate stack wrapped around the first semiconductor nanostructures and the second semiconductor nanostructures. The metal gate stack has a gate dielectric layer and a gate electrode. The gate dielectric layer extends along a sidewall of a lower portion of the dielectric structure. A topmost surface of the gate dielectric layer is between a topmost surface of the first semiconductor nanostructures and a topmost surface of the dielectric structure.

Abstract: The present disclosure describes a semiconductor device having a dielectric structure between a source/drain (S/D) structure and a contact structure. The semiconductor device includes a S/D structure on a substrate, a dielectric structure on a top surface of the S/D structure, and a S/D contact structure on the S/D structure and the dielectric structure. A portion of the S/D contact structure is in contact with a top surface of the dielectric structure.

Abstract: An electrostatic discharge protection device includes a substrate, a well region of a first conductivity type in the substrate, a drain field region and a source field region of a second conductivity type in the well region, a gate structure on the well region and between the drain field region and the source field region, a drain contact region and a source contact region of the second conductivity type respectively in the drain field region and the source field region, a first isolation region in the drain field region and between the drain contact region and the gate structure, and a drain doped region of the first conductivity in the drain field region and between a portion of a bottom surface of the drain contact region and the drain field region.