Abstract: A voltage calibration method, a memory storage device, and a memory control circuit unit are disclosed. The method includes: reading first data from a first physical unit using a first read voltage level and reading second data from at least one second physical unit using a second read voltage level; obtaining count information reflecting a total number of memory cells meeting a default condition in the first physical unit and the at least one second physical unit according to the first data and the second data; and calibrating the first read voltage level according to the count information.

Abstract: A voltage prediction method, a memory storage device and a memory control circuit unit are disclosed. The method includes: reading a plurality of memory cells in a rewritable non-volatile memory module by using a first read voltage level to obtain count information, and the first read voltage level is configured to distinguish a first state and a second state adjacent to each other in a threshold voltage distribution of the memory cells, and the count information reflects a total number of first memory cells meeting a target condition among the memory cells; and predicting a second read voltage level according to the count information, and the second read voltage level is configured to distinguish a third state and a fourth state adjacent to each other in the threshold voltage distribution.

Abstract: A control device, for controlling an operation of a memory device, wherein the memory device includes a plurality of memory blocks, each of the memory blocks includes a plurality of memory cells, and each of the memory cells stores a bit-data. The control device comprises the following elements. A processor, for classifying the memory cells into a plurality of groups according to an erase count of each of the memory cells, the groups respectively correspond to a plurality of recovery times. A memory interface control circuit, coupled to the processor and the memory device, and the processor controls the memory device to perform a bit recovery operation through the memory interface control circuit. The processor selects one of the groups according to the recovery times, and performs the bit recovery operation on the bit-data of each of the memory cells in the selected group.

Abstract: The application provides a method and a memory device for performing wear leveling in a memory device. The method includes: receiving data to be written transmitted by a host in the memory device; predicting the data to be written as a first type of data or a second type of data; referencing an erase count table in an erase count table buffer of the memory device; and when the data to be written is predicted as the first type of data, writing the data to be written into the block with a highest erase count among these blocks, and when the data to be written is predicted as the second type of data, writing the data to be written into the block with a lowest erase count among these blocks.

Abstract: An electrostatic discharge protection structure includes a semiconductor substrate, a gate structure disposed on the semiconductor substrate, a first well region of a first conductivity type disposed in the semiconductor substrate, a first doped region of the first conductivity type, a second doped region of a second conductivity type, a third doped region of the first conductivity type, and a fourth doped region of the second conductivity type. The first and second doped regions are disposed in the first well region and connected with each other. The second doped region is an emitter of a first bipolar junction transistor. The third and fourth doped regions are disposed in the semiconductor substrate and connected with each other. The third and second doped regions are located at two opposite sides of the gate structure in a first horizontal direction. The third doped region is an emitter of a second bipolar junction transistor.

Abstract: A slide rail assembly includes a first rail, a second rail, an aid-sliding device, a compensating device and a third rail. The aid-sliding device is movably mounted between the first rail and the second rail. The compensating device is movably mounted on the second rail. The second rail is configured to be movably mounted on the third rail. The compensating device is configured to compensating an error of a relative position of the first rail and the second rail.

Abstract: A production line operation forecast method and a production line operation forecast system are provided. The production line operation forecast method includes the following steps: obtaining an online production line work-in-process map at a time point, generating candidate simulated dispatch decisions based on the online production line work-in-process map, and inferring production-line work-in-process map changes of the candidate simulated dispatch decisions at a next time point; inputting the production-line work-in-process map changes to a forecast model, such that the forecast model outputs simulated production line operation health indicators of the candidate simulated dispatch decisions at the next time point; and selecting one of the candidate simulated dispatch decisions as a scheduling dispatch decision.

Abstract: An electrostatic discharge protection device includes a substrate, a well region of a first conductivity type in the substrate, a drain field region and a source field region of a second conductivity type in the well region, a gate structure on the well region and between the drain field region and the source field region, a drain contact region and a source contact region of the second conductivity type respectively in the drain field region and the source field region, a first isolation region in the drain field region and between the drain contact region and the gate structure, and a drain doped region of the first conductivity in the drain field region and between a portion of a bottom surface of the drain contact region and the drain field region.

Abstract: The application provides a method and a memory device for performing wear leveling in a memory device. The method includes: receiving data to be written transmitted by a host in the memory device; predicting the data to be written as a first type of data or a second type of data; referencing an erase count table in an erase count table buffer of the memory device; and when the data to be written is predicted as the first type of data, writing the data to be written into the block with a highest erase count among these blocks, and when the data to be written is predicted as the second type of data, writing the data to be written into the block with a lowest erase count among these blocks.

Abstract: A slide rail assembly includes a first rail, a second rail, an elastic member, a movable member and an electronic module. The second rail is movable relative to the first rail. When the second rail is located at a retracted position relative to the first rail and when the movable member is in a locking state, the elastic member is configured to be locked to accumulate the elastic force. The electronic module includes a driving device configured to drive the movable member to switch from the locking state to an unlocking state, in order to release the elastic force of the elastic member, such that the second rail is moved from the retracted position along an opening direction relative to the first rail in response to the elastic force of the elastic member.

Abstract: A temperature-sensitive cell culture composition is provided. The temperature-sensitive cell culture composition includes a hydrogel, a cellulose, a gelatin and a collagen. Based on 1 part by weight of the collagen, a content of the hydrogel is between 0.03 parts by weight and 60 parts by weight, a content of the cellulose is between 150 parts by weight and 360 parts by weight, and a content of the gelatin is between 21 parts by weight and 12 parts by weight. In addition, a method for using the temperature-sensitive cell culture composition, a method for forming the temperature-sensitive cell culture composition, and a use of the temperature-sensitive cell culture composition are also provided.

Abstract: A microminiaturized antenna feed module includes a substrate, a plurality of coupled feed portions, and an active circuit. The substrate defines a plurality of visa penetrating the substrate. The coupled feed portions, made of conductive material and have different coupling areas, are electrically connected to the active circuit through the holes, to feed in electrical signals, the coupled feed portions couple the electrical signals to the metal frame to radiate wireless signals; the active circuit controls the switching of radiation modes of the metal frame. The application also provides an electronic device with the microminiaturized antenna feed module.

Abstract: An electrostatic discharge protection structure includes a semiconductor substrate, a gate structure disposed on the semiconductor substrate, a first well region of a first conductivity type disposed in the semiconductor substrate, a first doped region of the first conductivity type, a second doped region of a second conductivity type, a third doped region of the first conductivity type, and a fourth doped region of the second conductivity type. The first and second doped regions are disposed in the first well region and connected with each other. The second doped region is an emitter of a first bipolar junction transistor. The third and fourth doped regions are disposed in the semiconductor substrate and connected with each other. The third and second doped regions are located at two opposite sides of the gate structure in a first horizontal direction. The third doped region is an emitter of a second bipolar junction transistor.

Abstract: An image segmentation method includes the following steps: obtaining a target image; inputting the target image into a machine learning model to obtain an image segmentation parameter value corresponding to the target image; executing an image segmentation algorithm on the target image according to the image segmentation parameter value to obtain an image segmentation result, wherein the image segmentation result is segmenting the target image into object regions; and displaying the image segmentation result. In addition, an electronic device and storage medium using the method are also provided.

Abstract: A lock device adapted for a first object and a second object movable relative to the first object includes a slider, a driving module, a latch and a power module. The driving module can drive the slider to move between a locking position and an unlocking position. The latch is movable relative to the slider. The power module can provide electricity to the driving module. When the second object is located at a retracted position relative to the first object, the driving module can drive the slider to move to the locking position, so that the latch blocks the second object. When the driving module is not driven by the power module, the latch is driven by the second object moving in an opening direction to move from an original state to a non-original state for driving the slider to move from the locking position to the unlocking position.

Abstract: A semiconductor structure is provided in the present invention, including a substrate, a deep N-well formed in the substrate, a first well formed in the deep N-well, a first gate formed on the first well, a first source and a first drain formed respectively at two sides of the first gate in the first well, a first doped region formed in the first well, and a metal interconnect electrically connected with the first source and the first doped region, wherein an area of the deep N-well multiplied by a first parameter is a first factor, an area of the first gate multiplied by a second parameter is a second factor, and an area of the metal interconnect divided by a sum of the first factor and the second factor is less than a specification value.

Abstract: A PFC power converter includes a power switch and an inductive device. A compensation signal is provided in response to an output voltage of the PFC power converter. An adapted compensation signal is provided in response to an ON time of the power switch and the compensation signal, to make the adapted compensation signal, the ON time, and the adapted compensation signal fit a predetermined correlation. The ON time of the power switch is determined in response to the adapted compensation signal. The PFC power converter is capable of achieving high PF when operating in discontinuous conduction mode.

Abstract: A decoding method, a memory storage device, and a memory control circuit unit are disclosed. The method includes: sending at least one read command sequence instructing to read a first physical unit in a rewritable non-volatile memory module; receiving response data from the rewritable non-volatile memory module, wherein the response data includes a plurality of identification bits, and the plurality of identification bits reflect a voltage variation of a first bit line where a first memory cell in the first physical unit is located during a discharge process; determining a decoding parameter corresponding to the first memory cell according to the plurality of identification bits; and decoding data read from the first memory cell according to the decoding parameter.

Abstract: An interactive image marking method is introduced. The interactive image marking method includes the following steps, displaying a target image and at least one marked region in the target image; receiving an interactive signal, where the interactive signal corresponds to a first pixel of the target image; calculating a correlation between the first pixel and pixels of the target image, and determining a correlation range in the target image according to the correlation; editing the marked region according to the correlate range; and displaying the edited marked region. In addition, an electronic device and a recording medium using the method are also introduced.

Abstract: In some examples, a system detects disabling of a driver of a storage control feature included in a main processor of the system, where the storage control feature to manage access of a storage device. In response to detecting the disabling of the driver of the storage control feature included in the main processor, the system initiates a remediation action to prevent a fault in the system.