Patents by Inventor Cheng-Ta Kuo
Cheng-Ta Kuo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20140231858Abstract: A LED sub-mount includes a substrate body and a plurality of first electrical-conductive layers. The substrate body has a first surface. The first electrical-conductive layers are positioned on the first surface of the substrate body, wherein the first surface between every adjacent two of the first electrical-conductive layers has an adhesive-filling groove.Type: ApplicationFiled: February 7, 2014Publication date: August 21, 2014Applicant: Lextar Electronics CorporationInventors: Chia-En Lee, Cheng-Ta Kuo, Der-Ling Hsia
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Patent number: 8729525Abstract: The present application relates to an opto-electronic device. The opto-electronic device includes an n-cladding layer, a p-cladding layer and a multi-quantum well structure. The multi-quantum well structure is located between the p-cladding layer and the n-cladding layer, and includes a plurality of barrier layers, a plurality of well layers and a barrier tuning layer. The barrier tuning layer is made by doping the barrier layer adjacent to the p-cladding layer with an impurity therein for changing an energy barrier thereof to improve the light extraction efficiency of the opto-electronic device.Type: GrantFiled: August 25, 2009Date of Patent: May 20, 2014Assignee: Epistar CorporationInventors: Jui-Yi Chu, Cheng-Ta Kuo, Yu-Pin Hsu, Chun-Kai Wang, Hsin-Hsien Wu, Yi-Chieh Lin
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Patent number: 8487317Abstract: This invention discloses a GaN semiconductor device comprising a substrate; a metal-rich nitride compound thin film on the substrate; a buffer layer formed on the metal-rich nitride compound thin film, and a semiconductor stack layer on the buffer layer wherein the metal-dominated nitride compound thin film covers a partial upper surface of the substrate. Because metal-rich nitride compound is amorphous, the epitaxial growth direction of the buffer layer grows upwards in the beginning and then turns laterally, and the epitaxy defects of the buffer layer also bend with the epitaxial growth direction of the buffer layer. Therefore, the probability of the epitaxial defects extending to the semiconductor stack layer is reduced and the reliability of the GaN semiconductor device is improved.Type: GrantFiled: March 27, 2009Date of Patent: July 16, 2013Assignee: Epistar CorporationInventors: Yi-Chieh Lin, Cheng-Ta Kuo, Yu-Pin Hsu, Chi-Ming Tsai
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Patent number: 8445327Abstract: A wafer-level packaging process of a light-emitting diode is provided. First, a semiconductor stacked layer is formed on a growth substrate. A plurality of barrier patterns and a plurality of reflective layers are then formed on the semiconductor stacked layer, wherein each reflective layer is surrounded by one of the barrier patterns. A first bonding layer is then formed on the semiconductor stacked layer to cover the barrier patterns and the reflective layers. Thereafter, a carrying substrate having a plurality of second bonding layers and a plurality of conductive plugs electrically insulated from each other is provided, and the first bonding layer is bonded with the second bonding layer. The semiconductor stacked layer is then separated from the growth substrate. Next, the semiconductor stacked layer is patterned to form a plurality of semiconductor stacked patterns. Next, each semiconductor stacked pattern is electrically connected to the conductive plug.Type: GrantFiled: February 23, 2012Date of Patent: May 21, 2013Assignee: Lextar Electronics Corp.Inventors: Chia-En Lee, Cheng-Ta Kuo, Der-Ling Hsia
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Patent number: 8415683Abstract: The present invention provides a manufacturing method of an LED chip. First, a device layer is formed on a growth substrate, wherein the device layer has a first surface connected to the growth substrate and a second surface. Next, a plurality of first trenches are formed on the second surface of the device layer. Then, a protection layer is formed on the side walls of the first trenches. After that, the second surface is bonded with a supporting substrate and the device layer is then separated from the growth substrate. Further, a plurality of second trenches corresponding to the first trenches are formed in the device layer to form a plurality of LEDs, wherein the second trenches extend from the first surface to the bottom portions of the first trenches. Furthermore, a plurality of electrodes are formed on the first surface of the device layer.Type: GrantFiled: May 12, 2009Date of Patent: April 9, 2013Assignee: Lextar Electronics Corp.Inventors: Chia-En Lee, Cheng-Ta Kuo, Der-Ling Hsia
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Patent number: 8278681Abstract: A wafer-level packaging process of a light-emitting diode is provided. First, a semiconductor stacked layer is formed on a growth substrate. A plurality of barrier patterns and a plurality of reflective layers are then formed on the semiconductor stacked layer, wherein each reflective layer is surrounded by one of the barrier patterns. A first bonding layer is then formed on the semiconductor stacked layer to cover the barrier patterns and the reflective layers. Thereafter, a carrying substrate having a plurality of second bonding layers and a plurality of conductive plugs electrically insulated from each other is provided, and the first bonding layer is bonded with the second bonding layer. The semiconductor stacked layer is then separated from the growth substrate. Next, the semiconductor stacked layer is patterned to form a plurality of semiconductor stacked patterns. Next, each semiconductor stacked pattern is electrically connected to the conductive plug.Type: GrantFiled: May 20, 2009Date of Patent: October 2, 2012Assignee: Lextar Electronics Corp.Inventors: Chia-En Lee, Cheng-Ta Kuo, Der-Ling Hsia
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Publication number: 20120211794Abstract: This disclosure discloses a light-emitting device. The light-emitting device comprises: a light-emitting stack having an upper surface and a lower surface; a pad, arranged on the upper surface, comprising: a first bonding region; and a second bonding region physically connected to the first bonding region through a connecting region having a connecting width; a first electrode connected to the first bonding region; a second electrode connected to the second bonding region; and a third electrode extending from the pad and arranged between the first electrode and the second electrode. At least one of the first electrode, the second electrode, and the third electrode has a width smaller than the connecting width.Type: ApplicationFiled: April 30, 2012Publication date: August 23, 2012Applicant: EPISTAR CORPORATIONInventors: Chien-Fu SHEN, Cheng-Ta Kuo, Wei-Shou Chen, Tsung-Hsien Liu, Yi-Wen Ku, Min-Hsun Hsieh
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Publication number: 20120168768Abstract: A semiconductor structure is provided. The semiconductor structure includes: a substrate; one or more semiconductor device layers formed on the substrate; and one or more lattice breaking areas formed on the surface of the substrate between the semiconductor device layers. The invention also provides a method for fabricating a semiconductor structure.Type: ApplicationFiled: December 29, 2011Publication date: July 5, 2012Applicant: LEXTAR ELECTRONICS CORPORATIONInventors: Kuo-Lung FANG, Chi-Wen KUO, Cheng-Ta KUO
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Publication number: 20120164768Abstract: A wafer-level packaging process of a light-emitting diode is provided. First, a semiconductor stacked layer is formed on a growth substrate. A plurality of barrier patterns and a plurality of reflective layers are then formed on the semiconductor stacked layer, wherein each reflective layer is surrounded by one of the barrier patterns. A first bonding layer is then formed on the semiconductor stacked layer to cover the barrier patterns and the reflective layers. Thereafter, a carrying substrate having a plurality of second bonding layers and a plurality of conductive plugs electrically insulated from each other is provided, and the first bonding layer is bonded with the second bonding layer. The semiconductor stacked layer is then separated from the growth substrate. Next, the semiconductor stacked layer is patterned to form a plurality of semiconductor stacked patterns. Next, each semiconductor stacked pattern is electrically connected to the conductive plug.Type: ApplicationFiled: February 23, 2012Publication date: June 28, 2012Applicant: LEXTAR ELECTRONICS CORP.Inventors: Chia-En Lee, Cheng-Ta Kuo, Der-Ling Hsia
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Patent number: 8188505Abstract: A light-emitting device comprises a substrate, an epitaxial structure formed on the substrate including a first semiconductor layer, a second semiconductor layer, and a light-emitting layer formed between the first semiconductor layer and the second semiconductor layer. A trench is formed in the epitaxial structure to expose a part of side surface of the epitaxial structure and a part of surface of the first semiconductor layer, so that a first conductive structure is formed on the part of surface of the first semiconductor layer in the trench, and a second conductive structure is formed on the second semiconductor layer. The first conductive structure includes a first electrode and a first pad electrically contacted with each other. The second conductive structure includes a second electrode and a second pad electrically contacted with each other. Furthermore, the area of at least one of the first pad and the second pad is between 1.5×104?m2 and 6.2×104 ?m2.Type: GrantFiled: November 21, 2008Date of Patent: May 29, 2012Assignee: Epistar CorporationInventors: Chien-Fu Shen, Cheng-Ta Kuo, Wei-Shou Chen, Tsung-Hsien Liu, Yi-Wen Ku, Min-Hsun Hsieh
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Publication number: 20110312113Abstract: A light-emitting diode (LED) structure and a method for manufacturing the LED structure are disclosed for promoting the recognition rate of LED chips, wherein a roughness degree of the surface under a first electrode pad of a first conductivity type is made similar to that of the surface under a second electrode pad of a second conductivity type, so that the luster shown from the first electrode pad can be similar to that from the second electrode pad, thus resolving the poor recognition problem of wire-bonding machines caused by different lusters from the first and second electrode pads.Type: ApplicationFiled: August 31, 2011Publication date: December 22, 2011Applicant: EPISTAR CORPORATIONInventors: Cheng-Ta Kuo, Kuo-Hui Yu, Chao-Hsing Chen, Tsun-Kai Ko, Chi-Ming Huang, Shih-Wei Yen, Chien-Kai Chung
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Patent number: 8076686Abstract: A light-emitting diode and the manufacturing method thereof are disclosed. The manufacturing method includes the steps of: sequentially forming a bonding layer, a geometric pattern layer, a reflection layer, an epitaxial structure and a first electrode on a permanent substrate, wherein the geometric pattern layer has a periodic structure; and forming a second electrode on one side of the permanent substrate.Type: GrantFiled: March 10, 2008Date of Patent: December 13, 2011Assignee: Epistar CorporationInventors: Kuo-Hui Yu, Yu-Cheng Yang, An-Ru Lin, Tsun-Kai Ko, Wei-Shou Chen, Yi-Wen Ku, Cheng-Ta Kuo
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Patent number: 8012777Abstract: A packaging process of a light emitting diode (LED) is provided. First, an LED chip is bonded with a carrier to electrically connect to each other. After that, the carrier is heated to raise the temperature thereof. Next, an encapsulant is formed on the heated carrier by a dispensing process to encapsulate the LED chip, wherein the viscosity of the encapsulant before contacting the carrier is lower than that of the encapsulant after contacting the carrier. Thereafter, the encapsulant is cured.Type: GrantFiled: July 2, 2009Date of Patent: September 6, 2011Assignee: Lextar Electronics Corp.Inventors: Wen-Sung Chang, Cheng-Ta Kuo
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Patent number: 8008680Abstract: A light-emitting diode (LED) device and manufacturing methods thereof are provided, wherein the LED device comprises a substrate, a first type conductivity semiconductor layer, an active layer, a second type conductivity semiconductor layer, a transparent conductive oxide stack structure, a first electrode, and a second electrode. The first semiconductor layer on the substrate has a first portion and a second portion. The active layer and the second semiconductor layer are subsequently set on the first portion. The transparent conductive oxide stack structure on the second semiconductor layer has at least two resistant interfaces. The first electrode is above the second portion, and the second electrode is above the transparent conductive oxide stack structure.Type: GrantFiled: September 21, 2010Date of Patent: August 30, 2011Assignee: Epistar CorporationInventors: Kuo-Hui Yu, Yu-Cheng Yang, Cheng-Ta Kuo
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Patent number: 7935981Abstract: A light emitting diode (LED) package includes a carrier, an LED chip, an encapsulant, a plurality of phosphor particles, and a plurality of anti-humidity particles. The LED chip is disposed on and electrically connected to the carrier. The encapsulant encapsulates the LED chip. The phosphor particles and the anti-humidity particles are distributed within the encapsulant. A first light emitted from the LED chip excites the phosphor particles to emit a second light. Some of the anti-humidity particles are adhered onto a surface of the phosphor particles, while the other anti-humidity particles are not adhered onto the surface of the phosphor particles. The anti-humidity particles absorb H2O so as to avoid H2O from being reacted with the phosphor particles. The LED package of the present application has favorable water resistance.Type: GrantFiled: July 6, 2009Date of Patent: May 3, 2011Assignee: Lextar Electronics Corp.Inventors: Yu-Chun Lee, Ya-Hsien Chang, Cheng-Ta Kuo
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Publication number: 20110057207Abstract: An white-light emitting device including a carrier, light emitting diode (LED) chips, and a wavelength converting material is provided. The LED chips are disposed on and electrically connected to the carrier. An equivalent wavelength of the first light emitted from the LED chips and divided into groups is ?. A variation of peak wavelengths of the LED chips in one group is smaller than 5 nm. ? meets an equation: ? = ? 1 n ? ( ? ? ? i × Ni × Ki ) ? 1 n ? Ni × Ki n is an integer equal to or larger than 2. ?i, Ni, and Ki are respectively an average peak wavelength, an quantity, and an average output efficiency of the LED chips in one group. The variation of ?i in different groups is ??i. 5 nm???i?30 nm. The wavelength converting material is excited by the first light to emit a second light. The first light and the second light are mixed to generate a white light.Type: ApplicationFiled: October 28, 2009Publication date: March 10, 2011Applicant: LEXTAR ELECTRONICS CORP.Inventors: Feng-Cheng Su, Cheng-Ta Kuo, Chih-Hao Yang
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Patent number: 7902562Abstract: A light-emitting diode device (LED) device and manufacturing methods thereof are provided, wherein the LED device comprises a substrate, a first n-type semiconductor layer, an n-type three-dimensional electron cloud structure, a second n-type semiconductor layer, an active layer and a p-type semiconductor layer. The first n-type semiconductor layer, the n-type three-dimensional electron cloud structure, the second n-type semiconductor layer, the active layer and the p-type semiconductor layer are subsequently grown on the substrate.Type: GrantFiled: August 18, 2008Date of Patent: March 8, 2011Assignee: Epistar CorporationInventors: Cheng-Ta Kuo, Yu-Pin Hsu, Chun-Kai Wang, Jui-Yi Chu, Tsung-Kuang Chen
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Patent number: 7888162Abstract: This application discloses a method of manufacturing a photoelectronic device comprising steps of providing a semiconductor stack layer, forming at least one metal adhesive on the semiconductor stack layer by a printing technology, forming an electrode by heating the metal adhesive to remove the solvent in the metal adhesive, wherein an ohmic contact is formed between the electrode and the semiconductor stack layer.Type: GrantFiled: July 29, 2009Date of Patent: February 15, 2011Assignee: Epistar CorporationInventors: Yu-Ling Chin, Li-Pin Jou, Yu-Chih Yang, Yu-Cheng Yang, Wei-Shou Chen, Cheng-Ta Kuo
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Publication number: 20110006701Abstract: A light-emitting diode (LED) device and manufacturing methods thereof are provided, wherein the LED device comprises a substrate, a first type conductivity semiconductor layer, an active layer, a second type conductivity semiconductor layer, a transparent conductive oxide stack structure, a first electrode, and a second electrode. The first semiconductor layer on the substrate has a first portion and a second portion. The active layer and the second semiconductor layer are subsequently set on the first portion. The transparent conductive oxide stack structure on the second semiconductor layer has at least two resistant interfaces. The first electrode is above the second portion, and the second electrode is above the transparent conductive oxide stack structure.Type: ApplicationFiled: September 21, 2010Publication date: January 13, 2011Inventors: Kuo-Hui YU, Yu-Cheng YANG, Cheng-Ta KUO
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Patent number: 7821026Abstract: A light-emitting diode (LED) device and manufacturing methods thereof are provided, wherein the LED device comprises a substrate, a first type conductivity semiconductor layer, an active layer, a second type conductivity semiconductor layer, a transparent conductive oxide stack structure, a first electrode, and a second electrode. The first semiconductor layer on the substrate has a first portion and a second portion. The active layer and the second semiconductor layer are subsequently set on the first portion. The transparent conductive oxide stack structure on the second semiconductor layer has at least two resistant interfaces. The first electrode is above the second portion, and the second electrode is above the transparent conductive oxide stack structure.Type: GrantFiled: September 8, 2008Date of Patent: October 26, 2010Assignee: Epistar CorporationInventors: Kuo-Hui Yu, Yu-Cheng Yang, Cheng-Ta Kuo