Abstract: A circuit board structure includes a carrier, a thin film redistribution layer disposed on the carrier, solder balls electrically connected to the thin film redistribution layer and the carrier, and a surface treatment layer. The thin film redistribution layer includes a first dielectric layer, pads, a first metal layer, a second dielectric layer, a second metal layer, and a third dielectric layer. A top surface of the first dielectric layer is higher than an upper surface of each pad. The first metal layer is disposed on a first surface of the first dielectric layer. The second dielectric layer has second openings exposing part of the first metal layer. The second metal layer extends into the second openings and is electrically connected to the first metal layer. The third dielectric layer has third openings exposing part of the second metal layer. The surface treatment layer is disposed on the upper surfaces.

Abstract: A circuit board structure includes a carrier, a thin film redistribution layer disposed on the carrier, solder balls electrically connected to the thin film redistribution layer and the carrier, and a surface treatment layer. The thin film redistribution layer includes a plurality of pads, a first dielectric layer, a first metal layer, a second dielectric layer, a second metal layer, and a third dielectric layer. A plurality of first openings of the first dielectric layer expose part of the pads, and a first surface of the first dielectric layer is higher upper surfaces of the pads. The solder balls are disposed in a plurality of third openings of the third dielectric layer and are electrically connected to the second metal layer and the carrier. The surface treatment layer is disposed on the upper surfaces, and a top surface of the surface treatment layer is higher than the first surface.

Abstract: A circuit board structure includes a circuit substrate having opposing first and second sides, a redistribution structure disposed at the first side, and a dielectric structure disposed at the second side. The circuit substrate includes a first circuit layer disposed at the first side and a second circuit layer disposed at the second side. The redistribution structure is electrically coupled to the circuit substrate and includes a first leveling dielectric layer covering the first circuit layer, a first thin-film dielectric layer disposed on the first leveling dielectric layer and having a material different from the first leveling dielectric layer, and a first redistributive layer disposed on the first thin-film dielectric layer and penetrating through the first thin-film dielectric layer and the first leveling dielectric layer to be in contact with the first circuit layer. The dielectric structure includes a second leveling dielectric layer disposed below the second circuit layer.

Abstract: A method includes etching a first semiconductor fin and a second semiconductor fin to form first recesses. The first and the second semiconductor fins have a first distance. A third semiconductor fin and a fourth semiconductor fin are etched to form second recesses. The third and the fourth semiconductor fins have a second distance equal to or smaller than the first distance. An epitaxy is performed to simultaneously grow first epitaxy semiconductor regions from the first recesses and second epitaxy semiconductor regions from the second recesses. The first epitaxy semiconductor regions are merged with each other, and the second epitaxy semiconductor regions are separated from each other.

Abstract: An imaging lens assembly module includes an imaging lens element set, a lens carrier and a light blocking structure. The imaging lens element set has an optical axis. At least one lens element of the lens elements is disposed in the lens carrier. The light blocking structure includes a light blocking opening. The optical axis passes through the light blocking opening, and the light blocking opening includes at least two arc portions and a shrinking portion. Each of the arc portions has a first curvature radius for defining a maximum diameter of the light blocking opening. The shrinking portion is connected to the arc portions for forming the light blocking opening into a non-circular shape. The shrinking portion includes at least one protruding arc which extends and shrinks gradually from the shrinking portion to the optical axis, and the protruding arc has a second curvature radius.

Abstract: A manufacturing method of a micro-electromechanical system acoustic sensor includes: forming an insulating layer and two first electrodes on a base plate, the two first electrodes being spaced apart from each other; arranging a first sacrificial layer on the insulating layer and the two first electrodes, and forming at least one first recess in the first sacrificial layer respectively above the two first electrodes; arranging a second sacrificial layer on the first sacrificial layer and the at least two first recesses, forming two second recesses spaced apart in the second sacrificial layer, and making the two second recesses respectively communicate with the corresponding at least one first recess to form two recess spaces; filling the two recess spaces respectively with a material to form two second electrodes; and removing all the first sacrificial layer and the second sacrificial layer.

Abstract: Provided is a memory device, including: a substrate; a plurality of word lines, extending in a first direction, arranged in a second direction, disposed on the substrate; a dummy structure, adjacent to ends of the word lines, disposed on the substrate, wherein the dummy structure includes a main part that extends in the second direction; and a plurality of extension parts, extending in the first direction, connected to the main part, and interposed between the main part and the word lines.

Abstract: A micro-electromechanical system (MEMS) acoustic sensor includes: a silicon substrate layer; an insulation layer, arranged above the silicon substrate layer; two first electrode layers, respectively arranged above the insulation layer and arranged opposite to each other at intervals; and two second electrode layers, respectively arranged above the two first electrode layers. Each of the second electrode layers is provided with at least one support member connected to the corresponding first electrode layer, and forms an acoustic flow channel together with a part of the insulation layer and the two first electrode layers. The each second electrode layer has a front section and a rear section. The front section forms a diverging first cambered surface. The rear section forms a tapered second cambered surface.

Abstract: Provided is a memory device, including: a substrate; a plurality of word lines, extending in a first direction, arranged in a second direction, disposed on the substrate; a dummy structure, adjacent to ends of the word lines, disposed on the substrate, wherein the dummy structure includes a main part that extends in the second direction; and a plurality of extension parts, extending in the first direction, connected to the main part, and interposed between the main part and the word lines.

Abstract: A pick-up structure for a memory device and method for manufacturing memory device are provided. The pick-up structure includes a substrate and a plurality of pick-up electrode strips. The substrate has a memory cell region and a peripheral pick-up region adjacent thereto. The pick-up electrode strips are parallel to a first direction and arranged on the substrate in a second direction. The second direction is different from the first direction. Each pick-up electrode strip includes a main part in the peripheral pick-up region and an extension part extending from the main part to the memory cell region. The main part is defined by fork-shaped patterns of a first mask layer. The extension part has a width less than that of the main part, and the extension part has a side wall surface aligned with a side wall surface of the main part.

Abstract: A flash memory device is provided. The flash memory device includes a substrate, a first dielectric layer, a second dielectric layer, a third dielectric layer, a first polycrystalline silicon layer and a second polycrystalline silicon layer. The first dielectric layer is formed on the substrate located in a first region of a peripheral region, the second dielectric layer is formed on the substrate located in a second region of the peripheral region, and the third dielectric layer is formed on the substrate located in an array region. A bottom surface of the third dielectric layer is lower than a bottom surface of the second dielectric layer. The first polycrystalline silicon layer is formed on the first and the second dielectric layers. The second polycrystalline silicon layer is formed on the third dielectric layer.

Abstract: A method for forming a semiconductor structure is provided. The method includes: forming first and second hard mask layers and a target layer on a substrate; patterning the second hard mask layer to form patterned second hard masks including a second wide mask and second narrow masks; and forming spacers on sidewalls of the second wide mask and the second narrow masks. Then, a photoresist layer is formed to cover the second wide mask and the spacers on the sidewalls of the second wide mask. The second narrow masks and the photoresist layer are removed. And, the first hard mask layer is etched with the spacers and the second wide mask together as a mask to form patterned first hard masks on the target layer, wherein the spacers define a first line width, and the second wide mask and the pair of spacers define a second line width.

Abstract: A flash memory device and its manufacturing method are provided. The flash memory device includes a substrate, a first dielectric layer, a second dielectric layer, a third dielectric layer, a first polycrystalline silicon layer and a second polycrystalline silicon layer. The first dielectric layer is formed on the substrate located in a first region of a peripheral region, the second dielectric layer is formed on the substrate located in a second region of the peripheral region, and the third dielectric layer is formed on the substrate located in an array region. A bottom surface of the third dielectric layer is lower than a bottom surface of the second dielectric layer. The first polycrystalline silicon layer is formed on the first and the second dielectric layers. The second polycrystalline silicon layer is formed on the third dielectric layer.

Abstract: A method for forming a semiconductor structure is provided. The method includes: forming first and second hard mask layers and a target layer on a substrate; patterning the second hard mask layer to form patterned second hard masks including a second wide mask and second narrow masks; and forming spacers on sidewalls of the second wide mask and the second narrow masks. Then, a photoresist layer is formed to cover the second wide mask and the spacers on the sidewalls of the second wide mask. The second narrow masks and the photoresist layer are removed. And, the first hard mask layer is etched with the spacers and the second wide mask together as a mask to form patterned first hard masks on the target layer, wherein the spacers define a first line width, and the second wide mask and the pair of spacers define a second line width.

Abstract: A method for forming a memory device is provided. The method includes forming a floating gate on a substrate, and forming a control gate on the floating gate. The method also includes forming a mask layer on the control gate, and forming a spacer on a sidewall of the mask layer, wherein a sidewall of the control gate and a sidewall of the floating gate is covered by the spacer. The method further includes performing an ion implantation process to implant a dopant into a top portion of the spacer, and performing a wet etching process to expose the sidewall of the control gate.

Abstract: An online learning management system and method for facilitating facial recognition, augmented reality, and virtual reality learning environments for users distributed across a network is disclosed. The system includes a server and one or more clients coupled by a network, each of the one or more clients having a learning environment. In some embodiments, the server receives and detects a network status of each client and dynamically adjusts a synchronization frequency of each associated learning environment. The learning environment may be an augmented reality learning environment having one or more face masks and/or stickers applied to facial features of a user in a video signal, wherein the server synchronizes the augmented reality learning environment among each client. The learning environment may further be a virtual reality learning environment having one or more 3D objects in a 3D scene, wherein the server synchronizes the virtual reality learning environments.

Abstract: A method for remote digital learning includes: providing plural teaching videos that each correspond to one of plural teachers and one of plural teaching materials; selecting a designated teacher from among the plural teachers based on student tags related to a user and teacher tags related to the plural teachers; selecting a designated teaching material from among the plural teaching materials based on the student tags and teaching material tags related to the plural teaching materials; from among the plural teaching videos, selecting a designated video that corresponds to both of the designated teacher and the designated teaching material; and providing the designated video to the user.

Abstract: A flash memory device and its manufacturing method are provided. The flash memory device includes a substrate, a first dielectric layer, a second dielectric layer, a third dielectric layer, a first polycrystalline silicon layer and a second polycrystalline silicon layer. The first dielectric layer is formed on the substrate located in a first region of a peripheral region, the second dielectric layer is formed on the substrate located in a second region of the peripheral region, and the third dielectric layer is formed on the substrate located in an array region. A bottom surface of the third dielectric layer is lower than a bottom surface of the second dielectric layer. The first polycrystalline silicon layer is formed on the first and the second dielectric layers. The second polycrystalline silicon layer is formed on the third dielectric layer.

Abstract: An online learning management system for monitoring and maintaining operational integrity of online teaching groups having users distributed across a network is disclosed. The system includes a managing interface, a teaching module, an analyzing module, a managing module, and a monitoring module. The teaching module is configured to manage communications between computing devices of the users. The analyzing module is configured to detect operational problems and disturbances. The managing module is configured to receive messages from the analyzing module, remove a user experiencing the operational problem or disturbance, insert the user into a managing area, facilitate diagnosis and correction of the operational problem or disturbance, and return the user when the operational problem or disturbance has been corrected. The monitoring module is configured to monitor connection status data of the computing devices, determine if the connection status is unstable, and record the connection status data of the user.

Abstract: An online learning management system for monitoring and maintaining the operational integrity of online teaching groups consisting of users distributed across a network is disclosed. The system comprises a management interface coupled to a teaching group and a teaching module configured to identify user operational problems within the group and to remove a user when an operational problem is identified. The system further comprises a managing module that inserts the user into a managing area when the user is removed from the teaching group, facilitates diagnosis and correction of the operational problem, and returns the user to the group when the operational problem has been corrected. The system further comprises a personalized operation interface that disables the user's connection to the group in response to the removal of the user from the group, and restores the user's connection when the operational problem has been corrected.