Abstract: An interconnect for an electrochemical stack includes at least one of alternating air channel ribs of different length, seal gutters recessed relative to a perimeter seal surface on a fuel side of the interconnect, or fuel inlet and outlet plenums which extend perpendicular to fuel channels.

Abstract: Provided is a capacitor structure for a three-dimensional AND flash memory device. The capacitor includes a substrate having a capacitor array region and a capacitor staircase region, a circuit under array (CuA) structure disposed on the substrate, a bottom conductive layer disposed on the CuA structure, a stacked structure disposed on the bottom conductive layer, and pillar structures. The stacked structure includes dielectric layers and conductive layers alternately stacked. The conductive layers in the capacitor staircase region are arranged in a staircase form. The pillar structures are arranged in an array in the capacitor array region and penetrate through the stacked structure and the bottom conductive layer. A part of the conductive layers is 10 electrically connected to a first common voltage source, and the rest of the conductive layers and the bottom conductive layer are electrically connected to a second common voltage source.

Abstract: Disclosed is a water flow switching device for sprinkler applications, the features of which include a projecting swing arm having a driven end, an oscillating end, and a supporting flange. The driven end extends to the exterior of an end wall and corresponding to a spray angle control mechanism to form a driven relationship. The oscillating end being located in a gear chamber. The supporting flange is mounted on a pivot seat. The oscillating end includes a first and a second oscillating position. A water shut-off device is disposed in the gear chamber. One side of the device has a first flap end, a second flap end, and a snap-over portion.

Abstract: A plurality of holes in a top surface of a silicon medium form a plurality of sub-meta lenses to result in multiple focal points rather than a single point (resulting from using a single meta lens). As a result, optical paths for incoming light are reduced as compared with a single optical path associated with a single meta lens, which in turn reduces angular response of incident photons. Thus, a pixel sensor including the plurality of sub-meta lenses experiences improved light focus and greater signal-to-noise ratio. Additionally, dimensions of the pixel sensor are reduced (particularly a height of the pixel sensor), which allows for greater miniaturization of an image sensor that includes the pixel sensor.

Abstract: An image sensor includes a semiconductor substrate, a first isolation structure, a visible light detection structure, and an infrared light detection structure. The semiconductor substrate has a first surface and a second surface opposite to the first surface in a vertical direction. The first isolation structure is disposed in the semiconductor substrate for defining pixel regions in the semiconductor substrate. The visible light detection structure and the infrared light detection structure are disposed within the same pixel region, and a first portion of the visible light detection structure is disposed between the second surface of the semiconductor substrate and the infrared light detection structure in the vertical direction. The infrared light detection structure includes an epitaxial structure disposed in the semiconductor substrate, and the visible light detection structure includes a doped region including a material identical to a material of the semiconductor substrate.

Abstract: Optical devices and methods of manufacture are presented in which a mirror structure is utilized to transmit and receive optical signals to and from an optical device. In embodiments the mirror structure receives optical signals from outside of an optical device and directs the optical signals through at least one mirror to an optical component of the optical device.

Abstract: An over-current protection device includes an electrode layer and a heat-sensitive layer. The heat-sensitive layer exhibits a positive temperature coefficient (PTC) characteristic, and is laminated between a top metal layer and a bottom metal layer of the electrode layer. The heat-sensitive layer includes a polymer matrix and a conductive filler. The polymer matrix includes a fluoropolymer. The fluoropolymer has a plurality of spherulites, and the fractal dimension of each spherulite is lower than 12.

Abstract: Various embodiments of the present application are directed towards an image sensor including a wavelength tunable narrow band filter, as well as methods for forming the image sensor. In some embodiments, the image sensor includes a substrate, a first photodetector, a second photodetector, and a filter. The first and second photodetectors neighbor in the substrate. The filter overlies the first and second photodetectors and includes a first distributed Bragg reflector (DBR), a second DBR, and a first interlayer between the first and second DBRs. A thickness of the first interlayer has a first thickness value overlying the first photodetector and a second thickness value overlying the second photodetector. In some embodiments, the filter is limited to a single interlayer. In other embodiments the filter further includes a second interlayer defining columnar structures embedded in the first interlayer and having a different refractive index than the first interlayer.

Abstract: The present disclosure provides an electrochemical measuring method. The method includes: providing a biochemical test chip including: an insulating substrate; an electrode unit, located on the insulating substrate and including a working electrode and a counter electrode; a first insulating septum, located on the electrode unit and having an opening at least partially exposing the electrode unit; a reactive layer, located at the opening and electrically connected to the electrode unit; and a second insulating septum, located on the first insulating septum, and reacting the reactive layer with a target analyte as a primary reaction. During the primary reaction, the counter electrode undergoes a self-redox reaction without interfering with the primary reaction, the self-redox reaction allows the counter electrode capable of receiving or releasing additional electrons, and a current density of the counter electrode is greater than a current density of the working electrode.

Abstract: A cushion for a wearable device includes an outer cover layer and an inner cushion. The outer cover layer includes a first base material, a heat conducting material and a first heat storage material. The heat conducting material and the first heat storage material are dispersed in the first base material. The enthalpy value of the outer cover layer is less than or equal to 5 J/g. The inner cushion includes a second base material and a second heat storage material. The second heat storage material is dispersed in the second base material. The enthalpy value of the inner cushion is greater than that of the outer cover layer. The difference between the enthalpy value of the inner cushion and the enthalpy value of the outer cover layer is greater than 45 J/g.

Abstract: A method includes forming a protruding fin, and forming a first dielectric layer including a first dielectric layer and a second dielectric layer over the first dielectric layer. The first dielectric layer includes a first top portion on a top surface of the protruding fin, and a sidewall portion on a sidewall of the protruding fin. The second dielectric layer is over the first top portion and the top surface of the protruding fin, and is formed using an anisotropic deposition process. The method further includes forming a dummy gate electrode on the second dielectric layer, forming a gate spacer on a sidewall of the dummy gate electrode, removing the dummy gate electrode, and forming a replacement gate electrode in a space left by the dummy gate electrode.

Abstract: Various embodiments of the present application are directed to a narrow band filter with high transmission and an image sensor comprising the narrow band filter. In some embodiments, the filter comprises a first distributed Bragg reflector (DBR), a second DBR, a defect layer between the first and second DBRs, and a plurality of columnar structures. The columnar structures extend through the defect layer and have a refractive index different than a refractive index of the defect layer. The first and second DBRs define a low transmission band, and the defect layer defines a high transmission band dividing the low transmission band. The columnar structures shift the high transmission band towards lower or higher wavelengths depending upon a refractive index of the columnar structures and a fill factor of the columnar structures.

Abstract: An examining method for a coating layer on a wafer is provided, including providing an incident light to the coating layer and generating a reflecting light after the coating layer receives the incident light. A spectral analysis of the reflecting light is then generated and compared with a first reference waveform to determine a material of the coating layer. Moreover, the spectral analysis may be further compared with a second reference waveform to determine a thickness of the coating layer. The incident light and reflecting light are provided and received by a spectroscope which is placed above on the wafer to provide perpendicular optical paths to the coating layer on the upper surface of the wafer. By employing the disclosed method, the material and thickness of the coating layer on the wafer can be examined and further classified so as to enhance the conventional efficiency in the prior arts.

Abstract: A power adapter includes a flyback converter and a buck converter. If a first device is a preferred device, then power is allocated to the first device up to a first value. If a second device is plugged in, then power is re-allocating to the first device up to a second value and up to a third value to the second device. A total of the second value and the third value is up to the first value.

Abstract: A computer processing system is provided for enhancing video-based language learning. The system includes a video server for storing videos that use one or more languages to be learned. The system further includes a video metadata database for storing translations of sentences uttered in the videos, character profiles of characters appearing in the videos, and mappings between the sentences and a learner profile. The system also includes a learner profile database for storing learner profiles. The system additionally includes a semantic analyzer and matching engine for finding, for at least a given video and a given learner, alternative sentences for and responsive to the translations of the sentences uttered in the given video that conflict with a respective learner profile for the given learner. The computer processing system further includes a presentation system for playing back the given video and providing the alternative sentences to the given learner.

Abstract: A voltage meter includes a sampler, a gain circuit, an accumulator and a feedback circuit. The sampler samples an input signal to generate a series of first signals and a series of second signals. The gain circuit, coupled to the sampler, modifies at least one of the series of first signals and the series of second signals, to generate a series of modified first signals and a series of modified second signals. The accumulator, coupled to the gain circuit, accumulates an operational result of the series of modified first signals and the series of modified second signals, to generate an accumulation result. The feedback circuit, coupled between the accumulator and the sampler, sends a feedback signal back to the sampler according to the accumulation result.

Abstract: An optical imaging lens assembly includes seven lens elements which are, in order from an object side to an image side along an optical path: a first lens element, a second lens element, a third lens element, a fourth lens element, a fifth lens element, a sixth lens element and a seventh lens element. Each of the seven lens elements has an object-side surface facing toward the object side and an image-side surface facing toward the image side. The second lens element has negative refractive power. The object-side surface of the third lens element is concave in a paraxial region thereof. The fourth lens element has positive refractive power. The image-side surface of the fifth lens element is concave in a paraxial region thereof. The sixth lens element has positive refractive power, and the image-side surface of the sixth lens element is convex in a paraxial region thereof.

Abstract: A semiconductor device, and method of fabricating the same, includes a first substrate, the first substrate including at least one visible light photosensor disposed between a first side and a second side of the first substrate, a second substrate including an infrared light photosensor disposed between a second side of the second substrate and a first side of the second substrate, and a metalens disposed between the visible light photosensor and the infrared light photosensor, the metalens configured to focus infrared light impinging on a surface of the first substrate onto the infrared light photosensor.

Abstract: A semiconductor device includes a first oxide layer and a gate structure. The first oxide layer is disposed on a substrate. The gate structure is disposed on the first oxide layer. The gate structure includes a gate and a spacer surrounding the gate. The first oxide layer includes an exposed segment not covered by the gate structure. A thickness of the first oxide layer right below the gate is fixed, and the thickness of the first oxide layer right below the gate is greater than a thickness of the exposed segment.

Abstract: A double-layer cholesteric liquid crystal display and its manufacturing method are disclosed. The double-layer cholesteric liquid crystal display includes three transparent substrates, two opposing electrode layers, two cholesteric liquid crystal layers, and a first light-absorbing layer. Additionally, the double-layer cholesteric liquid crystal display incorporates two drive ICs and a second light-absorbing layer. The two drive ICs can be positioned either on the same side or on opposite sides within the non-display area of the double-layer cholesteric liquid crystal display. Furthermore, the first cholesteric liquid crystal layer exhibits a first color light, and the second cholesteric liquid crystal layer exhibits a second color light, where the colors are selected as contrasting colors. Additionally, the two cholesteric liquid crystal layers possess mutually opposite optical rotary properties.