Abstract: A method of forming low-k material is provided. The method includes providing a plurality of core-shell particles. The core of the core-shell particles has a first ceramic with a low melting point. The shell of the core-shell particles has a second ceramic with a low melting point and a low dielectric constant. The core-shell particles are sintered and molded to form a low-k material. The shell of the core-shell particles is connected to form a network structure of a microcrystal phase.

Abstract: The present disclosure describes a method for forming metallization layers that include a ruthenium metal liner and a cobalt metal fill. The method includes depositing a first dielectric on a substrate having a gate structure and source/drain (S/D) structures, forming an opening in the first dielectric to expose the S/D structures, and depositing a ruthenium metal on bottom and sidewall surfaces of the opening. The method further includes depositing a cobalt metal on the ruthenium metal to fill the opening, reflowing the cobalt metal, and planarizing the cobalt and ruthenium metals to form S/D conductive structures with a top surface coplanar with a top surface of the first dielectric.

Abstract: The present disclosure provides a software upgrade system, which is applicable to at least one autonomous mobile robot installed with software in a data distribution service domain. The at least one autonomous mobile robot publishes a version information about the software to the version synchronization topic and receives other version information from the version synchronization topic. Also, the at least one autonomous mobile robot subscribes to a version synchronization topic, and takes the software of the at least one autonomous mobile robot itself as the latest version by a software update procedure to upload to a software update topic, or downloads the latest version of the software from the software update topic and installs it. The present disclosure provides a software upgrade method and a non-transitory recording medium.

Abstract: The present disclosure describes an apparatus with a local interconnect structure. The apparatus can include a first transistor, a second transistor, a first interconnect structure, a second interconnect structure, and a third interconnect structure. The local interconnect structure can be coupled to gate terminals of the first and second transistors and routed at a same interconnect level as reference metal lines coupled to ground and a power supply voltage. The first interconnect structure can be coupled to a source/drain terminal of the first transistor and routed above the local interconnect structure. The second interconnect structure can be coupled to a source/drain terminal of the second transistor and routed above the local interconnect structure. The third interconnect structure can be routed above the local interconnect structure and at a same interconnect level as the first and second interconnect structures.

Abstract: An apparatus for dynamically adjusting power consumption of a CPU in a computer system is described. A current flowing through the limiting resistor is detected and whether or not this current is larger than a predetermined current is determined. A warning signal is issued when the current is larger than this predetermined signal. The warning signal triggers the software framework and the hardware framework of the apparatus to issue an asynchronous operation frequency reduction instruction to the CPU of the computer system.

Abstract: An apparatus for dynamically adjusting power consumption of a CPU in a computer system is described. A current flowing through the limiting resistor is detected and whether or not this current is larger than a predetermined current is determined. A warning signal is issued when the current is larger than this predetermined signal. The warning signal triggers the software framework and the hardware framework of the apparatus to issue an asynchronous operation frequency reduction instruction to the CPU of the computer system.