Patents by Inventor Cheng-Tying Yen

Cheng-Tying Yen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Magnetic memory device
    Patent number: 7606063
    Abstract: A magnetic memory device includes a substrate, a magnetic tunneling junction (MTJ) structure disposed on the substrate, and a capping layer disposed on the MTJ structure. By adding a capping layer on the MTJ structure, the property of the magnetic memory device is improved, the magnetoresistance (MR) ratio is raised, and the time cost by the magnetic memory device to process data is effectively reduced.
    Type: Grant
    Filed: June 18, 2007
    Date of Patent: October 20, 2009
    Assignee: Industrial Technology Research Institute
    Inventors: Chih-Ta Shen, Yung-Hung Wang, Cheng-Tying Yen, Kuei-Hung Shen, Wei-Chuan Chen, Shan-Yi Yang
  • MAGNETIC MEMORY DEVICE
    Publication number: 20080186758
    Abstract: A magnetic memory device includes a substrate, a magnetic tunneling junction (MTJ) structure disposed on the substrate, and a capping layer disposed on the MTJ structure. By adding a capping layer on the MTJ structure, the property of the magnetic memory device is improved, the magnetoresistance (MR) ratio is raised, and the time cost by the magnetic memory device to process data is effectively reduced.
    Type: Application
    Filed: June 18, 2007
    Publication date: August 7, 2008
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Chih-Ta SHEN, Yung-Hung WANG, Cheng-Tying YEN, Kuei-Hung SHEN, Wei-Chuan CHEN, Shan-Yi YANG