Patents by Inventor Cheng Tzong Horng

Cheng Tzong Horng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6524687
    Abstract: A magnetic head/slider construction and a magnetic data recording disk, as well as a method for fabricating the magnetic head/slider construction and the magnetic data storage disk. To practice the method, there is formed over the air bearing surface of each of a magnetic head/slider construction and a magnetic data storage disk a wear resistant carbon layer. Over each of the wear resistant carbon layers is then formed a lubricating carbon layer. The lubricating carbon layers may be formed in-situ upon the wear resistant carbon layers. The wear resistant carbon layers may be formed from nitrogenated wear resistant carbon materials having a nitrogen content of from about 15 to about 30 atomic percent and hydrogenated wear resistant carbon materials having a hydrogen content of from about 15 to about 25 atomic percent. The lubricating carbon layer is preferably formed from a hydrogenated lubricating carbon material having a hydrogen content of from about 30 to about 40 atomic percent.
    Type: Grant
    Filed: February 5, 2001
    Date of Patent: February 25, 2003
    Assignee: Headway Technologies, Inc.
    Inventors: Cheng Tzong Horng, Jei-Wei Chang
  • Patent number: 6373667
    Abstract: A method for fabricating a soft adjacent layer (SAL) magnetoresistive (MR) sensor element and several soft adjacent layer (SAL) magnetoresistive (MR) sensor elements which may be fabricated employing the method. There is first provided a substrate. There is formed over the substrate a dielectric layer, where the dielectric layer has a first surface of the dielectric layer and a second surface of the dielectric layer opposite the first surface of the dielectric layer. There is also formed over the substrate a magnetoresistive (MR) layer contacting the first surface of the dielectric layer. There is also formed over the substrate a soft adjacent layer (SAL), where the soft adjacent layer (SAL) has a first surface of the soft adjacent layer (SAL) and a second surface of the soft adjacent layer (SAL). The first surface of the soft adjacent layer (SAL) contacts the second surface of the dielectric layer.
    Type: Grant
    Filed: August 14, 2000
    Date of Patent: April 16, 2002
    Assignee: Headway Technologies, Inc.
    Inventors: Cherng-Chyi Han, Mao-Min Chen, Cheng Tzong Horng, Po-Kang Wang, Chyu Jiuh Torng, Kochan Ju, Yimin Guo
  • Publication number: 20010004499
    Abstract: A magnetic head/slider construction and a magnetic data recording disk, as well as a method for fabricating the magnetic head/slider construction and the magnetic data storage disk. To practice the method, there is formed over the air bearing surface of each of a magnetic head/slider construction and a magnetic data storage disk a wear resistant carbon layer. Over each of the wear resistant carbon layers is then formed a lubricating carbon layer. The lubricating carbon layers may be formed in-situ upon the wear resistant carbon layers. The wear resistant carbon layers may be formed from nitrogenated wear resistant carbon materials having a nitrogen content of from about 15 to about 30 atomic percent and hydrogenated wear resistant carbon materials having a hydrogen content of from about 15 to about 25 atomic percent. The lubricating carbon layer is preferably formed from a hydrogenated lubricating carbon material having a hydrogen content of from about 30 to about 40 atomic percent.
    Type: Application
    Filed: February 5, 2001
    Publication date: June 21, 2001
    Applicant: HEADWAY TECHNOLOGIES, INC.
    Inventors: Cheng Tzong Horng, Jei-Wei Chang
  • Patent number: 6103136
    Abstract: A method for fabricating a soft adjacent layer (SAL) magnetoresistive (MR) sensor element and several soft adjacent layer (SAL) magnetoresistive (MR) sensor elements which may be fabricated employing the method. There is first provided a substrate. There is formed over the substrate a dielectric layer, where the dielectric layer has a first surface of the dielectric layer and a second surface of the dielectric layer opposite the first surface of the dielectric layer. There is also formed over the substrate a magnetoresistive (MR) layer contacting the first surface of the dielectric layer. There is also formed over the substrate a soft adjacent layer (SAL), where the soft adjacent layer (SAL) has a first surface of the soft adjacent layer (SAL) and a second surface of the soft adjacent layer (SAL). The first surface of the soft adjacent layer (SAL) contacts the second surface of the dielectric layer.
    Type: Grant
    Filed: March 23, 1998
    Date of Patent: August 15, 2000
    Assignee: Headway Technologies, Inc.
    Inventors: Cherng-Chyi Han, Mao-Min Chen, Cheng Tzong Horng, Po-Kang Wang, Chyu Jiuh Torng, Kochan Ju
  • Patent number: 6091589
    Abstract: Within a soft adjacent layer (SAL) magnetoresistive (MR) sensor element which may be employed within a magnetic head there is first employed a substrate. Formed over the substrate is a soft adjacent layer (SAL). In turn, formed upon the soft adjacent layer (SAL) is a dielectric layer. Finally, in turn, formed at least in part upon the dielectric layer is a magnetoresistive (MR) layer. Within the soft adjacent layer (SAL) magnetoresistive (MR) sensor element the soft adjacent layer (SAL) and the dielectric layer are planar. In addition, within the soft adjacent layer (SAL) magnetoresistive (MR) sensor element both an upper surface of the magnetoresistive (MR) layer and a lower interface of the magnetoresistive (MR) layer are non-planar.
    Type: Grant
    Filed: May 27, 1999
    Date of Patent: July 18, 2000
    Assignee: Headway Technologies, Inc.
    Inventors: Cherng-Chyi Han, Mao-Min Chen, Chien-Li Lin, Kochan Ju, Cheng Tzong Horng
  • Patent number: 5920980
    Abstract: A soft adjacent layer (SAL) magnetoresistive (MR) sensor element and a method for fabricating the soft adjacent layer (SAL) magnetoresistive (MR) sensor element. To practice the method, there is first provided a substrate. There is then formed over the substrate a soft adjacent layer (SAL). There is then formed upon the soft adjacent layer (SAL) a dielectric layer. There is then formed at least in part contacting the dielectric layer a magnetoresistive (MR) layer, where the soft adjacent layer (SAL) and the dielectric layer are planar. The method contemplates the soft adjacent layer (SAL) magnetoresistive (MR) sensor element formed through the method.
    Type: Grant
    Filed: March 5, 1997
    Date of Patent: July 13, 1999
    Assignee: Headway Technologies, Inc.
    Inventors: Cherng-Chyi Han, Mao-Min Chen, Chien-Li Lin, Kochan Ju, Cheng Tzong Horng
  • Patent number: 5878481
    Abstract: A method for forming a magnetic transducer structure. There is first provided a substrate. There is then formed over the substrate a lower magnetic pole layer. There is then formed upon the lower magnetic pole layer a gap filling dielectric layer. There is then formed at least in part upon the gap filling dielectric layer a patterned positive photoresist layer employed in defining through a plating method an upper magnetic pole layer formed at least in part upon the gap filling dielectric layer. The patterned photoresist layer has a first region defining a pole tip of the upper magnetic pole layer and a second region defining a magnetic coil region of the upper magnetic pole layer. The first region of the patterned positive photoresist layer is photoexposed either before or after forming through the plating method the upper magnetic pole layer defined by the patterned positive photoresist layer.
    Type: Grant
    Filed: April 28, 1997
    Date of Patent: March 9, 1999
    Assignee: Headway Technologies, Inc.
    Inventors: Yong-Chang Feng, Cherng-Chyi Han, Cheng Tzong Horng
  • Patent number: 5874010
    Abstract: A method for trimming a pole used in a read-write head comprises the step of depositing a metallic layer on a layer of pole material, patterning the metallic layer so that it can serve as a mask, and ion beam etching the pole material with nitrogen ions. Of importance, a thin nitride layer forms on the metallic layer so that the etch rate of the metallic layer during ion beam etching is slowed. Alternatively, in lieu of the metallic layer, a nitride layer can be used.
    Type: Grant
    Filed: July 17, 1996
    Date of Patent: February 23, 1999
    Assignee: Headway Technologies, Inc.
    Inventors: Arthur Hungshin Tao, Yong-Chang Feng, Cheng Tzong Horng, Cherng-Chyi Han
  • Patent number: 5858182
    Abstract: A magnetic head/slider construction and a magnetic data recording disk, as well as a method for fabricating the magnetic head/slider construction and the magnetic data storage disk. To practice the method, there is formed over the air bearing surface of each of a magnetic head/slider construction and a magnetic data storage disk a wear resistant carbon layer. Over each of the wear resistant carbon layers is then formed a lubricating carbon layer. The lubricating carbon layers may be formed in-situ upon the wear resistant carbon layers. The wear resistant carbon layers may be formed from nitrogenated wear resistant carbon materials having a nitrogen content of from about 15 to about 30 atomic percent and hydrogenated wear resistant carbon materials having a hydrogen content of from about 15 to about 25 atomic percent. The lubricating carbon layer is preferably formed from a hydrogenated lubricating carbon material having a hydrogen content of from about 30 to about 40 atomic percent.
    Type: Grant
    Filed: March 20, 1997
    Date of Patent: January 12, 1999
    Assignee: Headway Technoloies, Inc.
    Inventors: Cheng Tzong Horng, Jei-Wei Chang
  • Patent number: 4118250
    Abstract: In this process of producing a bipolar transistor, all the regions of the device except the emitter region are formed by ion implantation through an inorganic dielectric layer of uniform thickness. Subsequently, all the contact openings to the emitter, base and collector are formed and the emitter is implanted through the emitter contact opening. This unique combination of process steps permits the use of a surface insulating dielectric layer of uniform thickness, wherein all capacitances are uniform and controllable while still permitting direct implantation of the emitter, which, because of its shallow depth is difficult to implant through an oxide.
    Type: Grant
    Filed: December 30, 1977
    Date of Patent: October 3, 1978
    Assignee: International Business Machines Corporation
    Inventors: Cheng Tzong Horng, Alwin Earl Michel, Hans Stephan Rupprecht, Robert Otto Schwenker