Abstract: Chemical vapor deposition (CVD) is used to synthesize single-wall carbon nanotubes by a catalytic reaction, and a method of preparing the catalyst is also provided. A transition metal catalyzing growth of carbon nanotubes, an oxide of a precursor metal preventing agglomeration of catalyst particles, and a precious metal are essentially consisted in the catalyst. The catalyst particles can be further dispersed by quasi-explosive effect occurred when the oxidized precious metal is reduced.

Abstract: Chemical vapor deposition (CVD) is used to synthesize single-wall carbon nanotubes by a catalytic reaction, and a method of preparing the catalyst is also provided. A transition metal catalyzing growth of carbon nanotubes, an oxide of a precursor metal preventing agglomeration of catalyst particles, and a precious metal are essentially consisted in the catalyst. The catalyst particles can be further dispersed by quasi-explosive effect occurred when the oxidized precious metal is reduced.

Abstract: Chemical vapor deposition (CVD) is used to synthesize single-wall carbon nanotubes by a catalytic reaction, and a method of preparing the catalyst is also provided. A transition metal catalyzing growth of carbon nanotubes, an oxide of a precursor metal preventing agglomeration of catalyst particles, and a precious metal are essentially consisted in the catalyst. The catalyst particles can be further dispersed by quasi-explosive effect occurred when the oxidized precious metal is reduced.

Abstract: A method of selective growth of carbon nano-structures on silicon substrates, comprising definition of the predetermined area on Si substrates to be grown carbon nano-structures, formation of metal-silicides on the predetermined area on the said Si substrates to be grown carbon nano-structures, and growth of carbon nano-structures on the said metal-silicides by chemical vapor deposition method. Locations of the said metal-silicides on the said Si substrates are growth area of the nano-structures, whereby function of selective growth of carbon nano-structures on Si substrates can be achieved. Besides, the said metal-silicides area is manufactured by semiconductor processes, and is directly compatible with IC processes.

Abstract: The present invention provides a method to control the magnetic alloy-encapsulated carbon-base nanostructures apply an appropriate amount of magnetic field during magnetic alloy-encapsulated nanostructure deposition and post treatment for improved magnetic anisotropy by electron cyclotron resonance chemical vapor deposition (ECR-CVD), the catalyst and additive on surface of substrate use DC bias and heating treatment and then etching the substrate during plasma pretreatment. The present invention is to provide control of the size and shape of the nanostructures, capability to be effectively manipulated the magnetic anisotropy and coercive force of the encapsulated magnetic nanoparticles, capability to store the magnetic signals with nano-resolution.

Abstract: A foot stepper exercise machine is composed of a base (10), two platform elements (20R, 20L) pivotally secured on the base (10), and two resilient elements (30) sandwiched between the base (10) and the corresponding platform elements respectively. The resilient elements (30) provide recoiling force for the platform elements (20R, 20L) and substitute mechanically hydraulic presses so that the structure of the foot stepper is simplified and a user is enabled to selectively operate the foot stepper in different ways while sitting.

Abstract: A foot stepper exercise machine is composed of a base (10), two platform elements (20R, 20L) pivotally secured on the base (10), and two resilient elements (30) sandwiched between the base (10) and the corresponding platform elements respectively. The resilient elements (30) provide recoiling force for the platform elements (20R, 20L) and substitute mechanically hydraulic presses so that the structure of the foot stepper is simplified and a user is enabled to selectively operate the foot stepper in different ways while sitting.