Patents by Inventor Cheng-Wei Chien
Cheng-Wei Chien has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230240150Abstract: A magnetic tunnel junction (MTJ) element includes a reference layer, a tunnel barrier layer, a free layer, and a dusting layer. The reference layer has a fixed magnetic orientation. The tunnel barrier layer is disposed on the reference layer, and includes an insulating material. The free layer has a changeable magnetic orientation, and includes a first surface and a second surface. The second surface is disposed to confront the tunnel barrier layer and opposite to the first surface. The dusting layer is formed on one of the first and second surfaces of the free layer, and includes a non-magnetic metal. Another aspect of the MTJ element, and a method for manufacturing the MTJ element are also disclosed.Type: ApplicationFiled: January 25, 2022Publication date: July 27, 2023Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chun-Chi CHEN, Harry-Hak-Lay CHUANG, Kuei-Hung SHEN, Cheng-Wei CHIEN, Yi-Jen HUANG
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Publication number: 20220291306Abstract: Disclosed methods include placing a semiconductor wafer containing MRAM devices into a first magnetic field that has a magnitude sufficient to magnetically polarize MRAM bits and has a substantially uniform field strength and direction over the entire area of the wafer. The method further includes placing the wafer in a second magnetic field having an opposite field direction, a substantially uniform field strength and direction over the entire area of the wafer, and magnitude less than a design threshold for MRAM bit magnetization reversal. The method further includes determining a presence of malfunctioning MRAM bits by determining that such malfunctioning MRAM bits have a magnetic polarization that was reversed due to exposure to the second magnetic field. Malfunctioning MRAM bits may further be characterized by electrically reading data bits, or by using a chip probe to read one or more of voltage, current, resistances, etc., of the MRAM devices.Type: ApplicationFiled: September 9, 2021Publication date: September 15, 2022Inventors: Cheng-Wei Chien, Harry-Hak-Lay Chuang, Kuei-Hung Shen, Kuo-Feng Huang, Bo-Hung Lin, Chun-Chi Chen
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Patent number: 10580971Abstract: A method includes depositing a magnetic track layer on a seed layer, depositing an alloy layer on the magnetic track layer, depositing a tunnel barrier layer on the alloy layer, depositing a pinning layer on the tunnel barrier layer, depositing a synthetic antiferromagnetic layer spacer on the pinning layer, depositing a pinned layer on the synthetic antiferromagnetic spacer layer and depositing an antiferromagnetic layer on the pinned layer, and another method includes depositing an antiferromagnetic layer on a seed layer, depositing a pinned layer on the antiferromagnetic layer, depositing a synthetic antiferromagnetic layer spacer on the pinned layer, depositing a pinning layer on the synthetic antiferromagnetic layer spacer, depositing a tunnel barrier layer on the pinning layer, depositing an alloy layer on the tunnel barrier layer and depositing a magnetic track layer on alloy layer.Type: GrantFiled: February 9, 2018Date of Patent: March 3, 2020Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, INDUSTRIAL TECHNOLOGY RESEARCHInventors: Guohan Hu, Cheng-Wei Chien
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Publication number: 20180166626Abstract: A method includes depositing a magnetic track layer on a seed layer, depositing an alloy layer on the magnetic track layer, depositing a tunnel barrier layer on the alloy layer, depositing a pinning layer on the tunnel barrier layer, depositing a synthetic antiferromagnetic layer spacer on the pinning layer, depositing a pinned layer on the synthetic antiferromagnetic spacer layer and depositing an antiferromagnetic layer on the pinned layer, and another method includes depositing an antiferromagnetic layer on a seed layer, depositing a pinned layer on the antiferromagnetic layer, depositing a synthetic antiferromagnetic layer spacer on the pinned layer, depositing a pinning layer on the synthetic antiferromagnetic layer spacer, depositing a tunnel barrier layer on the pinning layer, depositing an alloy layer on the tunnel barrier layer and depositing a magnetic track layer on alloy layer.Type: ApplicationFiled: February 9, 2018Publication date: June 14, 2018Inventors: Guohan Hu, Cheng-Wei Chien
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Patent number: 9941465Abstract: A device includes a seed layer, a magnetic track layer disposed on the seed layer, an alloy layer disposed on the magnetic track layer, a tunnel barrier layer disposed on the alloy layer, a pinning layer disposed on the tunnel barrier layer, a synthetic antiferromagnetic layer spacer disposed on the pinning layer, a pinned layer disposed on the synthetic antiferromagnetic spacer layer and an antiferromagnetic layer disposed on the pinned layer, and another device includes a seed layer, an antiferromagnetic layer disposed on the seed layer, a pinned layer disposed on the antiferromagnetic layer, a synthetic antiferromagnetic layer spacer disposed on the pinned layer, a pinning layer disposed on the synthetic antiferromagnetic layer spacer, a tunnel barrier layer disposed on the pinning layer, an alloy layer disposed on the tunnel barrier layer and a magnetic track layer disposed on alloy layer.Type: GrantFiled: August 5, 2016Date of Patent: April 10, 2018Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Guohan Hu, Cheng-Wei Chien
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Publication number: 20160343936Abstract: A device includes a seed layer, a magnetic track layer disposed on the seed layer, an alloy layer disposed on the magnetic track layer, a tunnel barrier layer disposed on the alloy layer, a pinning layer disposed on the tunnel barrier layer, a synthetic antiferromagnetic layer spacer disposed on the pinning layer, a pinned layer disposed on the synthetic antiferromagnetic spacer layer and an antiferromagnetic layer disposed on the pinned layer, and another device includes a seed layer, an antiferromagnetic layer disposed on the seed layer, a pinned layer disposed on the antiferromagnetic layer, a synthetic antiferromagnetic layer spacer disposed on the pinned layer, a pinning layer disposed on the synthetic antiferromagnetic layer spacer, a tunnel barrier layer disposed on the pinning layer, an alloy layer disposed on the tunnel barrier layer and a magnetic track layer disposed on alloy layer.Type: ApplicationFiled: August 5, 2016Publication date: November 24, 2016Inventors: Guohan Hu, Cheng-Wei Chien
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Patent number: 9431600Abstract: A device includes a seed layer, a magnetic track layer disposed on the seed layer, an alloy layer disposed on the magnetic track layer, a tunnel barrier layer disposed on the alloy layer, a pinning layer disposed on the tunnel barrier layer, a synthetic antiferromagnetic layer spacer disposed on the pinning layer, a pinned layer disposed on the synthetic antiferromagnetic spacer layer and an antiferromagnetic layer disposed on the pinned layer, and another device includes a seed layer, an antiferromagnetic layer disposed on the seed layer, a pinned layer disposed on the antiferromagnetic layer, a synthetic antiferromagnetic layer spacer disposed on the pinned layer, a pinning layer disposed on the synthetic antiferromagnetic layer spacer, a tunnel barrier layer disposed on the pinning layer, an alloy layer disposed on the tunnel barrier layer and a magnetic track layer disposed on alloy layer.Type: GrantFiled: October 6, 2014Date of Patent: August 30, 2016Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Guohan Hu, Cheng-Wei Chien
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Publication number: 20160099404Abstract: A device includes a seed layer, a magnetic track layer disposed on the seed layer, an alloy layer disposed on the magnetic track layer, a tunnel barrier layer disposed on the alloy layer, a pinning layer disposed on the tunnel barrier layer, a synthetic antiferromagnetic layer spacer disposed on the pinning layer, a pinned layer disposed on the synthetic antiferromagnetic spacer layer and an antiferromagnetic layer disposed on the pinned layer, and another device includes a seed layer, an antiferromagnetic layer disposed on the seed layer, a pinned layer disposed on the antiferromagnetic layer, a synthetic antiferromagnetic layer spacer disposed on the pinned layer, a pinning layer disposed on the synthetic antiferromagnetic layer spacer, a tunnel barrier layer disposed on the pinning layer, an alloy layer disposed on the tunnel barrier layer and a magnetic track layer disposed on alloy layer.Type: ApplicationFiled: October 6, 2014Publication date: April 7, 2016Inventors: Guohan Hu, Cheng-Wei Chien
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Patent number: 9166149Abstract: A magnetic device includes a substrate, a sensing block and a repair layer. The substrate has a bottom electrode, a registration layer and a barrier layer disposed on the registration layer. The sensing block is patterned to distribute on the barrier layer. The repair layer is disposed substantially on the barrier layer, wherein the barrier layer is configured to have a tunneling effect when a bias voltage exists between the sensing block and the registration layer.Type: GrantFiled: October 31, 2014Date of Patent: October 20, 2015Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Cheng Wei Chien, Kuei Hung Shen, Yung Hung Wang
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Patent number: 9069033Abstract: A 3-axis magnetic field sensor on a substrate and including, a first tunneling magneto-resistor (TMR) having a first easy-axis for sensing a X-axis magnetic field, a second TMR having a second easy-axis for sensing a Y-axis magnetic field, an out-of-plane magnetic sensor for sensing a Z-axis magnetic field, and a reference unit is provided. The first easy-axis and the second easy-axis are orthogonal and include an angle of 45±5 degrees with a bisection direction, respectively. The out-of-plane magnetic sensor includes a groove or bulge structure having a first incline and a second incline; a third TMR on the first incline having a third easy-axis; a fourth TMR on the second incline having a fourth easy-axis; and a central axis orthogonal to the bisection direction and parallel to the third easy-axis and the fourth easy-axis. The reference unit has a fifth TMR and a fifth easy-axis parallel to the bisection direction.Type: GrantFiled: June 2, 2013Date of Patent: June 30, 2015Assignee: Industrial Technology Research InstituteInventors: Young-Shying Chen, Keng-Ming Kuo, Ding-Yeong Wang, Cheng-Wei Chien
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Publication number: 20150076634Abstract: A magnetic device includes a substrate, a sensing block and a repair layer. The substrate has a bottom electrode, a registration layer and a barrier layer disposed on the registration layer. The sensing block is patterned to distribute on the barrier layer. The repair layer is disposed substantially on the barrier layer, wherein the barrier layer is configured to have a tunneling effect when a bias voltage exists between the sensing block and the registration layer.Type: ApplicationFiled: October 31, 2014Publication date: March 19, 2015Inventors: CHENG WEI CHIEN, KUEI HUNG SHEN, YUNG HUNG WANG
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Patent number: 8901687Abstract: A magnetic device includes a substrate, a sensing block and a repair layer. The substrate has a registration layer and a barrier layer disposed on the registration layer. The sensing block is patterned to distribute on the barrier layer. The repair layer is disposed substantially on the barrier layer, wherein the barrier layer is configured to have a tunneling effect when a bias voltage exists between the sensing block and the registration layer.Type: GrantFiled: November 27, 2012Date of Patent: December 2, 2014Assignee: Industrial Technology Research InstituteInventors: Cheng Wei Chien, Kuei Hung Shen, Yung Hung Wang
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Publication number: 20140292312Abstract: A 3-axis magnetic field sensor on a substrate and including, a first tunneling magneto-resistor (TMR) having a first easy-axis for sensing a X-axis magnetic field, a second TMR having a second easy-axis for sensing a Y-axis magnetic field, an out-of-plane magnetic sensor for sensing a Z-axis magnetic field, and a reference unit is provided. The first easy-axis and the second easy-axis are orthogonal and include an angle of 45±5 degrees with a bisection direction, respectively. The out-of-plane magnetic sensor includes a groove or bulge structure having a first incline and a second incline; a third TMR on the first incline having a third easy-axis; a fourth TMR on the second incline having a fourth easy-axis; and a central axis orthogonal to the bisection direction and parallel to the third easy-axis and the fourth easy-axis. The reference unit has a fifth TMR and a fifth easy-axis parallel to the bisection direction.Type: ApplicationFiled: June 2, 2013Publication date: October 2, 2014Inventors: Young-Shying Chen, Keng-Ming Kuo, Ding-Yeong Wang, Cheng-Wei Chien
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Publication number: 20140145277Abstract: A magnetic device includes a substrate, a sensing block and a repair layer. The substrate has a registration layer and a barrier layer disposed on the registration layer. The sensing block is patterned to distribute on the barrier layer. The repair layer is disposed substantially on the barrier layer, wherein the barrier layer is configured to have a tunneling effect when a bias voltage exists between the sensing block and the registration layer.Type: ApplicationFiled: November 27, 2012Publication date: May 29, 2014Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: CHENG WEI CHIEN, KUEI HUNG SHEN, YUNG HUNG WANG
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Publication number: 20140138782Abstract: A magnetic sensing apparatus and a manufacturing method thereof are provided. The magnetic sensing apparatus includes a substrate including a first surface having at least one first inclined plane, a first dielectric layer having at least one second inclined plane and at least one magnetic sensing device. The first dielectric layer is disposed on the first surface of the substrate. The surface roughness of the first dielectric layer is less than the surface roughness of the at least one first inclined plane. The inclination of the at least one second inclined plane is less than the inclination of the at least one first inclined plane. The magnetic sensing device is disposed on the at least one second inclined plane.Type: ApplicationFiled: March 26, 2013Publication date: May 22, 2014Applicant: Industrial Technology Research InstituteInventor: Cheng-Wei Chien
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Patent number: 7642040Abstract: Providing a fabrication method of a periodic domain inversion structure. A nonlinear optical ferroelectric material substrate is provided. A photoresist layer is formed on the upper and the lower surface of the substrate, and periodic gratings formed by interference of two laser beams are employed to expose the photoresist layer on the upper surface. Meanwhile, the two laser beams pass through the substrate, so the periodic gratings are used to expose the photoresist layer on the lower surface. A development process is performed to form a periodic photoresist pattern on the two surfaces of the substrate. A conductive layer is formed above the substrate for covering the photoresist pattern and the surface of the exposed substrate. The photoresist pattern and a portion of the conductive layer thereon are removed by lift-off. A voltage is applied to the substrate via the remaining conductive layer to polarize parts of the substrate.Type: GrantFiled: March 5, 2007Date of Patent: January 5, 2010Assignee: National Central UniversityInventors: Jyh-Chen Chen, Chang-Hung Chiang, Yeeu-Chang Lee, Cheng-Wei Chien
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Publication number: 20070298334Abstract: Providing a fabrication method of a periodic domain inversion structure. A nonlinear optical ferroelectric material substrate is provided. A photoresist layer is formed on the upper and the lower surface of the substrate, and periodic gratings formed by interference of two laser beams are employed to expose the photoresist layer on the upper surface. Meanwhile, the two laser beams pass through the substrate, so the periodic gratings are used to expose the photoresist layer on the lower surface. A development process is performed to form a periodic photoresist pattern on the two surfaces of the substrate. A conductive layer is formed above the substrate for covering the photoresist pattern and the surface of the exposed substrate. The photoresist pattern and a portion of the conductive layer thereon are removed by lift-off. A voltage is applied to the substrate via the remaining conductive layer to polarize parts of the substrate.Type: ApplicationFiled: March 5, 2007Publication date: December 27, 2007Applicant: NATIONAL CENTRAL UNIVERSITYInventors: Jyh-Chen Chen, Chang-Hung Chiang, Yeeu-Chang Lee, Cheng-Wei Chien