Abstract: A light emitting device includes a wavelength conversion layer, at least one light emitting unit and a reflective protecting element. The wavelength conversion layer has an upper surface and a lower surface opposite to each other. The light emitting unit has two electrode pads located on the same side of the light emitting unit. The light emitting unit is disposed on the upper surface of the wavelength conversion layer and exposes the two electrode pads. The reflective protecting element encapsulates at least a portion of the light emitting unit and a portion of the wavelength conversion layer, and exposes the two electrode pads of the light emitting unit.

Abstract: A light-emitting device is provided. The light-emitting device includes a substrate having a long edge and a short edge, at least one electrode pad assembly, and at least one light-emitting element. The at least one electrode pad assembly is disposed on the substrate and includes a first electrode pad and a second electrode pad. The at least one light-emitting element has a plurality of electrodes electrically connected to the first electrode pad and the second electrode pad of the at least one electrode pad assembly. The first electrode pad and the second electrode pad are arranged along a direction parallel to the short side.

Abstract: A light-emitting device includes a substrate, a light-emitting component, a translucent layer, an adhesive layer, a reflective layer and translucent encapsulant. The light-emitting component is disposed on the substrate. The adhesive layer is formed between the light-emitting component and the translucent layer. The reflective layer is formed above the substrate and covering a lateral surface of the light-emitting component, a lateral surface of the adhesive layer and a lateral surface of the translucent layer. The translucent encapsulant is formed on the substrate and encapsulating the light-emitting component, the translucent layer and the reflective layer.

Abstract: A light-emitting device including at least one light-emitting unit, a wavelength conversion adhesive layer, and a reflective protecting element is provided. The light-emitting unit has an upper surface and a lower surface opposite to each other. The light-emitting unit includes two electrode pads, and the two electrode pads are located on the lower surface. The wavelength conversion adhesive layer is disposed on the upper surface. The wavelength conversion adhesive layer includes a low-concentration fluorescent layer and a high-concentration fluorescent layer. The high-concentration fluorescent layer is located between the low-concentration fluorescent layer and the light-emitting unit. The width of the high-concentration fluorescent layer is WH. The width of the low-concentration fluorescent layer is WL. The width of the light-emitting unit is WE. The light-emitting device further satisfies the following inequalities: WE<WL, WH<WL and 0.8<WH/WE?1.2.

Abstract: A light-emitting device includes a substrate, a light-emitting component, a wavelength conversion component, an adhesive and a reflective layer. The light-emitting component is disposed on the substrate. The wavelength conversion component includes a high-density phosphor layer and a lower-density phosphor layer. The adhesive is formed between the light-emitting device and the high-density phosphor layer. The reflective layer is formed above the substrate and covers a lateral surface of the light-emitting component, a lateral surface of the adhesive and a lateral surface of the wavelength conversion component.

Abstract: An edge lighting light emitting diode (LED) structure and a method of manufacturing the same are provided. The edge lighting LED structure includes a substrate, an electrode pattern, a chip, an encapsulation layer and a fluorescent layer. The electrode pattern at least includes two first conducting portions separately disposed on an upper surface of the substrate, two second conducting portions separately disposed on a lower surface of the substrate, and two conducting holes separately vertically penetrating through the substrate, each conducting hole connects a first conducting portion and a second conducting portion, and the conducting holes are exposed on a lateral surface of the substrate. A second surface of the chip is disposed on the first conducting portions. A top surface of the encapsulation layer exposes and is aligned with the first surface of the chip. The fluorescent layer covers a first surface of the chip.

Abstract: A light-emitting device includes a substrate, a light-emitting component, a wavelength conversion component, an adhesive and a reflective layer. The light-emitting component is disposed on the substrate. The wavelength conversion component includes a high-density phosphor layer and a lower-density phosphor layer. The adhesive is formed between the light-emitting device and the high-density phosphor layer. The reflective layer is formed above the substrate and covers a lateral surface of the light-emitting component, a lateral surface of the adhesive and a lateral surface of the wavelength conversion component.

Abstract: A light emitting device package structure includes at least one light emitting device, a wavelength conversion adhesive layer, and a protection element. The light emitting device has an upper surface, a lower surface opposite to the upper surface, and a side surface connecting the upper surface and the lower surface. The wavelength conversion adhesive layer is disposed on the upper surface of the light emitting device and has a first edge and a second edge opposite to each other. The protection element encapsulates the side surface of the light emitting device and the second edge of the wavelength conversion adhesive layer and exposes the lower surface of the light emitting device. A third edge of the protection element is aligned with the first edge of the wavelength conversion adhesive layer.

Abstract: A light emitting device includes a wavelength conversion layer, at least one light emitting unit and a reflective protecting element. The wavelength conversion layer has an upper surface and a lower surface opposite to each other. The light emitting unit has two electrode pads located on the same side of the light emitting unit. The light emitting unit is disposed on the upper surface of the wavelength conversion layer and exposes the two electrode pads. The reflective protecting element encapsulates at least a portion of the light emitting unit and a portion of the wavelength conversion layer, and exposes the two electrode pads of the light emitting unit.

Abstract: A light-emitting device is provided. The light-emitting device includes a substrate having a long edge and a short edge, at least one electrode pad assembly, and at least one light-emitting element. The at least one electrode pad assembly is disposed on the substrate and includes a first electrode pad and a second electrode pad. The at least one light-emitting element has a plurality of electrodes electrically connected to the first electrode pad and the second electrode pad of the at least one electrode pad assembly. The first electrode pad and the second electrode pad are arranged along a direction parallel to the short side.

Abstract: A chip package structure and method of manufacturing the same are provided. The chip package structure includes a substrate with a carrier surface, a chip having a first surface and a second surface positioned oppositely and a side surface connecting the first surface and the second surface, an encapsulation layer and a fluorescent layer. The second surface of the chip is disposed on the carrier surface of the substrate. The fluorescent layer fully covers the first surface of the chip. The encapsulation layer covers the carrier surface of the substrate and the side surface of the chip. A reflectivity of the encapsulation layer is at least greater than 90%.

Abstract: A semiconductor light-emitting device that includes a substrate, at least one light-emitting unit arranged on the substrate, a phosphor layer at least covering an upper surface of the at least one light-emitting unit, and a reflective layer arranged on the substrate is provided. The reflective layer surrounds the at least one light-emitting unit. A manufacturing method of a semiconductor light-emitting device is also provided.

Abstract: An edge lighting light emitting diode (LED) structure and a method of manufacturing the same are provided. The edge lighting LED structure includes a substrate, an electrode pattern, a chip, an encapsulation layer and a fluorescent layer. The electrode pattern at least includes two first conducting portions separately disposed on an upper surface of the substrate, two second conducting portions separately disposed on a lower surface of the substrate, and two conducting holes separately vertically penetrating through the substrate, each conducting hole connects a first conducting portion and a second conducting portion, and the conducting holes are exposed on a lateral surface of the substrate. A second surface of the chip is disposed on the first conducting portions. A top surface of the encapsulation layer exposes and is aligned with the first surface of the chip. The fluorescent layer covers a first surface of the chip.

Abstract: A circuit board for driving a flip-chip light emitting chip is disclosed. The circuit board includes a metal substrate having a first surface and a second surface, the first surface including a first electrode area, a second electrode area and a heat conduction area; a first metal electrode formed on the first electrode area for providing a first voltage; a first insulation layer formed between the first metal electrode and the metal substrate; a second metal electrode formed on the second electrode area for providing a second voltage; a second insulation layer formed between the second metal electrode and the metal substrate; and a solder resist layer covering the first surface; wherein the heat conduction area is exposed from the solder resist layer.

Abstract: The invention relates to a circuit structure of a flip-chip light emitting diode. It is provided for assembling of the flip-chip light emitting diode. Each flip-chip light emitting diode has at least two electrodes. The circuit structure defines a light emitting surface on a surface of a substrate, and the light emitting surface is provided with a plurality of reflective and conductive surfaces. The reflective and conductive surface is used for assembling of the electrodes of the flip-chip light emitting diode. At least one flip-chip light emitting diode is connected in series, parallel or series-parallel on the light emitting surface, wherein the total area of the reflective and conductive surface accounts for 80% to 99% of the area of the light emitting surface.

Abstract: A LED (Light-Emitting Diode) lighting fixture and a manufacturing method thereof are disclosed. The LED lighting fixture comprises a LED module generating light at a wavelength range of 300-700 nm, a lamp cover shielding the LED module, and a phosphor layer. The phosphor layer which is coated on an inner surface towards the LED module comprises at least two types of phosphor mixed at a default ratio for transforming the light of 300-700 nm in wavelength to luminary light in the wavelength range of 400-700 nm.

Abstract: A LED (Light-Emitting Diode) lighting fixture and a manufacturing method thereof are disclosed. The LED lighting fixture comprises a LED module generating light at a wavelength range of 300-700 nm, a lamp cover shielding the LED module, and a phosphor layer. The phosphor layer which is coated on an inner surface towards the LED module comprises at least two types of phosphor mixed at a default ratio for transforming the light of 300-700 nm in wavelength to luminary light in the wavelength range of 400-700 nm.

Abstract: An LED (Light-Emitting Diode) lighting device is provided. The LED lighting device comprises an LED module, a lamp cover, and a phosphor layer. The LED module comprises a circuit board comprising a driving circuit and a plurality of LEDs mounted on the circuit board and driven by the driving circuit so as to emit light of 300-700 nm in wavelength. The lamp cover is configured to shield the LED module. The phosphor layer is coated on an inner surface of the lamp cover towards the LED module and configured to transform the light of 300-700 nm in wavelength to a luminary light of 400-700 nm in wavelength.

Abstract: An LED (Light-Emitting Diode) light tube includes a transparent tube, a phosphor layer and a base board. The phosphor layer is coated on a surface of the transparent tube, wherein a thickness of the phosphor layer is 10-100 ?m. The base board is arranged inside the transparent tube for carrying a plurality of LEDs (Light-Emitting Diodes), wherein the length between the base board and the top of the transparent tube is H, and the distance between every two adjacent LEDs is P, and H/P is not smaller than 0.134 and H is 9.5-38 mm.