Abstract: A light emitting device including a first light emitting unit, a second light emitting unit, a heat dissipation substrate, a plurality of first bumps and a plurality of second bumps is provided. The heat dissipation substrate is disposed between the first light emitting unit and the second light emitting unit. The first bumps are connected between the first light emitting unit and the heat dissipation substrate. The second bumps are connected between the second light emitting unit and the heat dissipation substrate.

Abstract: A light emitting device including a light emitting unit and a phosphor resin layer is provided. The light emitting unit has a top surface and a bottom surface opposite to each other. Each of the light emitting units includes two electrodes. The two electrodes are disposed on the bottom surface. The phosphor resin layer is disposed on the top surface of the light emitting unit. One side of the phosphor resin layer has a mark. One of the two electrodes is closer to the mark with respect to the other one of the two electrodes.

Abstract: A light emitting device includes a wavelength conversion layer, at least one light emitting unit and a reflective protecting element. The wavelength conversion layer has an upper surface and a lower surface opposite to each other. The light emitting unit has two electrode pads located on the same side of the light emitting unit. The light emitting unit is disposed on the upper surface of the wavelength conversion layer and exposes the two electrode pads. The reflective protecting element encapsulates at least a portion of the light emitting unit and a portion of the wavelength conversion layer, and exposes the two electrode pads of the light emitting unit.

Abstract: A light-emitting device is provided. The light-emitting device includes a substrate having a long edge and a short edge, at least one electrode pad assembly, and at least one light-emitting element. The at least one electrode pad assembly is disposed on the substrate and includes a first electrode pad and a second electrode pad. The at least one light-emitting element has a plurality of electrodes electrically connected to the first electrode pad and the second electrode pad of the at least one electrode pad assembly. The first electrode pad and the second electrode pad are arranged along a direction parallel to the short side.

Abstract: A manufacturing method of a semiconductor light-emitting device is provided. Steps of the manufacturing method includes: providing a substrate; placing at least one light-emitting unit on the substrate; encapsulating the at least one light-emitting unit onto the substrate by a phosphor layer and a reflective layer. The phosphor layer at least covers an upper surface of the at least one light-emitting unit, and the reflective layer surrounds the at least one light-emitting unit.

Abstract: A light-emitting device includes a substrate, a light-emitting component, a wavelength conversion component, an adhesive and a reflective layer. The light-emitting component is disposed on the substrate. The wavelength conversion component includes a high-density phosphor layer and a lower-density phosphor layer. The adhesive is formed between the light-emitting device and the high-density phosphor layer. The reflective layer is formed above the substrate and covers a lateral surface of the light-emitting component, a lateral surface of the adhesive and a lateral surface of the wavelength conversion component.

Abstract: A light emitting device includes a wavelength conversion layer, at least one light emitting unit and a reflective protecting element. The wavelength conversion layer has an upper surface and a lower surface opposite to each other. The light emitting unit has two electrode pads located on the same side of the light emitting unit. The light emitting unit is disposed on the upper surface of the wavelength conversion layer and exposes the two electrode pads. The reflective protecting element encapsulates at least a portion of the light emitting unit and a portion of the wavelength conversion layer, and exposes the two electrode pads of the light emitting unit.

Abstract: A light-emitting device is provided. The light-emitting device includes a substrate having a long edge and a short edge, at least one electrode pad assembly, and at least one light-emitting element. The at least one electrode pad assembly is disposed on the substrate and includes a first electrode pad and a second electrode pad. The at least one light-emitting element has a plurality of electrodes electrically connected to the first electrode pad and the second electrode pad of the at least one electrode pad assembly. The first electrode pad and the second electrode pad are arranged along a direction parallel to the short side.

Abstract: A light-emitting device includes a substrate, a light-emitting component, a translucent layer, an adhesive layer, a reflective layer and translucent encapsulant. The light-emitting component is disposed on the substrate. The adhesive layer is formed between the light-emitting component and the translucent layer. The reflective layer is formed above the substrate and covering a lateral surface of the light-emitting component, a lateral surface of the adhesive layer and a lateral surface of the translucent layer. The translucent encapsulant is formed on the substrate and encapsulating the light-emitting component, the translucent layer and the reflective layer.

Abstract: A light-emitting device including at least one light-emitting unit, a wavelength conversion adhesive layer, and a reflective protecting element is provided. The light-emitting unit has an upper surface and a lower surface opposite to each other. The light-emitting unit includes two electrode pads, and the two electrode pads are located on the lower surface. The wavelength conversion adhesive layer is disposed on the upper surface. The wavelength conversion adhesive layer includes a low-concentration fluorescent layer and a high-concentration fluorescent layer. The high-concentration fluorescent layer is located between the low-concentration fluorescent layer and the light-emitting unit. The width of the high-concentration fluorescent layer is WH. The width of the low-concentration fluorescent layer is WL. The width of the light-emitting unit is WE. The light-emitting device further satisfies the following inequalities: WE<WL, WH<WL and 0.8<WH/WE?1.2.

Abstract: A light-emitting device includes a substrate, a light-emitting component, a wavelength conversion component, an adhesive and a reflective layer. The light-emitting component is disposed on the substrate. The wavelength conversion component includes a high-density phosphor layer and a lower-density phosphor layer. The adhesive is formed between the light-emitting device and the high-density phosphor layer. The reflective layer is formed above the substrate and covers a lateral surface of the light-emitting component, a lateral surface of the adhesive and a lateral surface of the wavelength conversion component.

Abstract: An edge lighting light emitting diode (LED) structure and a method of manufacturing the same are provided. The edge lighting LED structure includes a substrate, an electrode pattern, a chip, an encapsulation layer and a fluorescent layer. The electrode pattern at least includes two first conducting portions separately disposed on an upper surface of the substrate, two second conducting portions separately disposed on a lower surface of the substrate, and two conducting holes separately vertically penetrating through the substrate, each conducting hole connects a first conducting portion and a second conducting portion, and the conducting holes are exposed on a lateral surface of the substrate. A second surface of the chip is disposed on the first conducting portions. A top surface of the encapsulation layer exposes and is aligned with the first surface of the chip. The fluorescent layer covers a first surface of the chip.

Abstract: A light emitting device package structure includes at least one light emitting device, a wavelength conversion adhesive layer, and a protection element. The light emitting device has an upper surface, a lower surface opposite to the upper surface, and a side surface connecting the upper surface and the lower surface. The wavelength conversion adhesive layer is disposed on the upper surface of the light emitting device and has a first edge and a second edge opposite to each other. The protection element encapsulates the side surface of the light emitting device and the second edge of the wavelength conversion adhesive layer and exposes the lower surface of the light emitting device. A third edge of the protection element is aligned with the first edge of the wavelength conversion adhesive layer.

Abstract: A light-emitting device includes a substrate, a light-emitting component, a wavelength conversion component, an adhesive and a reflective layer. The light-emitting component is disposed on the substrate. The wavelength conversion component includes a high-density phosphor layer and a lower-density phosphor layer. The adhesive is formed between the light-emitting device and the high-density phosphor layer. The reflective layer is formed above the substrate and covers a lateral surface of the light-emitting component, a lateral surface of the adhesive and a lateral surface of the wavelength conversion component.

Abstract: A light emitting device includes a wavelength conversion layer, at least one light emitting unit and a reflective protecting element. The wavelength conversion layer has an upper surface and a lower surface opposite to each other. The light emitting unit has two electrode pads located on the same side of the light emitting unit. The light emitting unit is disposed on the upper surface of the wavelength conversion layer and exposes the two electrode pads. The reflective protecting element encapsulates at least a portion of the light emitting unit and a portion of the wavelength conversion layer, and exposes the two electrode pads of the light emitting unit.

Abstract: A light-emitting device is provided. The light-emitting device includes a substrate having a long edge and a short edge, at least one electrode pad assembly, and at least one light-emitting element. The at least one electrode pad assembly is disposed on the substrate and includes a first electrode pad and a second electrode pad. The at least one light-emitting element has a plurality of electrodes electrically connected to the first electrode pad and the second electrode pad of the at least one electrode pad assembly. The first electrode pad and the second electrode pad are arranged along a direction parallel to the short side.

Abstract: An edge lighting light emitting diode (LED) structure and a method of manufacturing the same are provided. The edge lighting LED structure includes a substrate, an electrode pattern, a chip, an encapsulation layer and a fluorescent layer. The electrode pattern at least includes two first conducting portions separately disposed on an upper surface of the substrate, two second conducting portions separately disposed on a lower surface of the substrate, and two conducting holes separately vertically penetrating through the substrate, each conducting hole connects a first conducting portion and a second conducting portion, and the conducting holes are exposed on a lateral surface of the substrate. A second surface of the chip is disposed on the first conducting portions. A top surface of the encapsulation layer exposes and is aligned with the first surface of the chip. The fluorescent layer covers a first surface of the chip.

Abstract: A semiconductor light-emitting device that includes a substrate, at least one light-emitting unit arranged on the substrate, a phosphor layer at least covering an upper surface of the at least one light-emitting unit, and a reflective layer arranged on the substrate is provided. The reflective layer surrounds the at least one light-emitting unit. A manufacturing method of a semiconductor light-emitting device is also provided.

Abstract: A chip package structure and method of manufacturing the same are provided. The chip package structure includes a substrate with a carrier surface, a chip having a first surface and a second surface positioned oppositely and a side surface connecting the first surface and the second surface, an encapsulation layer and a fluorescent layer. The second surface of the chip is disposed on the carrier surface of the substrate. The fluorescent layer fully covers the first surface of the chip. The encapsulation layer covers the carrier surface of the substrate and the side surface of the chip. A reflectivity of the encapsulation layer is at least greater than 90%.

Abstract: A circuit board for driving a flip-chip light emitting chip is disclosed. The circuit board includes a metal substrate having a first surface and a second surface, the first surface including a first electrode area, a second electrode area and a heat conduction area; a first metal electrode formed on the first electrode area for providing a first voltage; a first insulation layer formed between the first metal electrode and the metal substrate; a second metal electrode formed on the second electrode area for providing a second voltage; a second insulation layer formed between the second metal electrode and the metal substrate; and a solder resist layer covering the first surface; wherein the heat conduction area is exposed from the solder resist layer.