Abstract: An Ethernet power supply receives a DC voltage through a bus positive terminal and a bus negative terminal, and is coupled to a load device. The Ethernet power supply includes a first control module and a second control module. The first control module is used to provide a first control signal through the bus negative terminal to confirm whether the load device is a valid load. The second control module is used to connect or disconnect a coupling relationship between the bus positive terminal and the first control module according to the load device being connected or not.

Abstract: An Ethernet power supply receives a DC voltage through a bus positive terminal and a bus negative terminal, and is coupled to a load device. The Ethernet power supply includes a first control module and a second control module. The first control module provides a first control signal through the bus negative terminal to confirm whether the load device is a valid load. The second control module is used to connect or disconnect a coupling relationship between the bus positive terminal and the first control module according to whether the load device is connected to the Ethernet power supply.

Abstract: In an embodiment, a method of forming a structure includes forming a first transistor and a second transistor over a first substrate; forming a front-side interconnect structure over the first transistor and the second transistor; etching at least a backside of the first substrate to expose the first transistor and the second transistor; forming a first backside via electrically connected to the first transistor; forming a second backside via electrically connected to the second transistor; depositing a dielectric layer over the first backside via and the second backside via; forming a first conductive line in the dielectric layer, the first conductive line being a power rail electrically connected to the first transistor through the first backside via; and forming a second conductive line in the dielectric layer, the second conductive line being a signal line electrically connected to the second transistor through the second backside via.

Abstract: A memory device and a manufacturing method thereof are provided. The memory device includes a magnetic tunneling junction (MTJ) and a spin Hall electrode (SHE). The MTJ includes a free layer, a reference layer and a barrier layer lying between the free layer and the reference layer. The SHE is in contact with the MTJ, and configured to convert a charge current to a spin current for programming the MTJ. The SHE is formed of an alloy comprising at least one heavy metal element and at least one light transition metal element. The heavy metal element is selected from metal elements with one or more valence electrons filling in 5d orbitals, and the light transition metal element is selected from transition metal elements with one or more valence electrons partially filling in 3d orbitals.