Abstract: Provided are a passivation layer for forming a semiconductor bonding structure, a sputtering target making the same, a semiconductor bonding structure and a semiconductor bonding process. The passivation layer is formed on a bonding substrate by sputtering the sputtering target; the passivation layer and the sputtering target comprise a first metal, a second metal or a combination thereof. The bonding substrate comprises a third metal. Based on a total atom number of the surface of the passivation layer, O content of the surface of the passivation layer is less than 30 at %; the third metal content of the surface of the passivation layer is less than or equal to 10 at %. The passivation layer has a polycrystalline structure. The semiconductor bonding structure sequentially comprises a first bonding substrate, a bonding layer and a second bonding substrate: the bonding layer is mainly formed by the passivation layer and the third metal.

Abstract: An optical system is provided. The optical system includes a light source assembly, a sensing element, and a light guiding element. The light source assembly is used for generating first light and second light. The sensing element is used for sensing third light from the second light reflected by an eye. The light guiding element is used for transporting the first light, the second light, and the third light. Wavelengths of the first light and the second light are different.

Abstract: An optical system is provided. The optical system includes a light source assembly, a light guiding element, and a first optical assembly. The light source assembly is used for generating first light and second light. The light guiding element is used for transporting the first light and the second light. The first optical assembly is disposed between the light guiding element and the light source assembly and used for transporting the first light and the second light. Wavelengths of the first light and the second light are different.

Abstract: A supported metallocene catalyst includes a carrier and a metallocene component. The carrier includes an inorganic oxide particle and an alkyl aluminoxane material. The inorganic oxide particle includes at least one inorganic oxide compound selected from the group consisting of an oxide of Group 3A and an oxide of Group 4A. The alkyl aluminoxane material includes an alkyl aluminoxane compound and an alkyl aluminum compound that is present in amount ranging from greater than 0.01 wt % to less than 14 wt % base on 100 wt % of the alkyl aluminoxane material. The metallocene component is supported on the carrier, and includes one of a metallocene compound containing a metal from Group 3B, a metallocene compound containing a metal from Group 4B, and a combination thereof. A method for preparing the supported metallocene catalyst and a method for preparing polyolefin using the supported metallocene catalyst are also disclosed.

Abstract: A heating apparatus for a nozzle of an injection machine includes a helical-spring shaped heating portion, a first sleeve, and a second sleeve. The first sleeve includes a first blocking portion and forms internal threads. The second sleeve includes a second blocking portion and forms external threads. The heating portion is received in the second sleeve. The internal threads are screwed into the external threads. The first blocking portion and the second blocking portion sandwich the heating portion.

Abstract: A heating apparatus for a nozzle of an injection machine includes a helical-spring shaped heating portion, a first sleeve, and a second sleeve. The first sleeve includes a first blocking portion and forms internal threads. The second sleeve includes a second blocking portion and forms external threads. The heating portion is received in the second sleeve. The internal threads are screwed into the external threads. The first blocking portion and the second blocking portion sandwich the heating portion.