Patents by Inventor Cheng-Wen Kuo

Cheng-Wen Kuo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11929271
    Abstract: An apparatus for inspecting wafer carriers is disclosed. In one example, the apparatus includes: a housing; a load port; a robot arm inside the housing; and a processor. The load port is configured to load a wafer carrier into the housing. The robot arm is configured to move a first camera connected to the robot arm. The first camera is configured to capture a plurality of images of the wafer carrier. The processor is configured to process the plurality of images to inspect the wafer carrier.
    Type: Grant
    Filed: July 13, 2020
    Date of Patent: March 12, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Cheng-Kang Hu, Shou-Wen Kuo, Sheng-Hsiang Chuang, Jiun-Rong Pai, Hsu-Shui Liu
  • Publication number: 20240079270
    Abstract: A method of forming a semiconductor device includes forming an opening in a dielectric layer, and forming a barrier layer in the opening. A combined liner layer is formed over the barrier layer by first forming a first liner layer over the barrier layer, and forming a second liner layer over the first liner layer, such that the first liner layer and the second liner layer intermix. A conductive material layer is formed over the combined liner layer, and a thermal process is performed to reflow the conductive material layer.
    Type: Application
    Filed: November 13, 2023
    Publication date: March 7, 2024
    Inventors: Huei-Wen Hsieh, Kai-Shiang Kuo, Cheng-Hui Weng, Chun-Sheng Chen, Wen-Hsuan Chen
  • Publication number: 20230327036
    Abstract: A solar cell structure includes a semiconductor substrate having a front side and a back side. A pyramid structure is disposed on the front side of the semiconductor substrate. The pyramid structure has an aspect ratio between 0.5-1.2. A front passivation layer is disposed on the pyramid structure. A first anti-reflection layer is disposed on the pyramid structure. The first anti-reflection layer is a multi-layered, graded anti-reflection layer having at least three coating layers. The at least three coating layers comprise a silicon oxynitride layer having a thickness of 15-30 nm and a refractive index between 1.65 and 1.75. The silicon oxynitride layer is an outermost layer of the multi-layered, graded anti-reflection layer.
    Type: Application
    Filed: June 7, 2023
    Publication date: October 12, 2023
    Applicant: TSEC Corporation
    Inventors: Cheng-Wen Kuo, Yung-Chih Li, Ying-Quan Wang, Sheng-Kai Wu, Wen-Ching Chu, Ta-Ming Kuan, Hung Cheng, Jen-Ho Kang, Cheng-Yeh Yu
  • Publication number: 20220077330
    Abstract: A solar cell structure includes a semiconductor substrate having a front side and a back side; a pyramid structure disposed on the front side of the semiconductor substrate; a front passivation layer disposed on the pyramid structure; and a first anti-reflection layer disposed on the pyramid structure. The first reflective layer is a multi-layered anti-reflection layer having at least three coating layers. A front electrode is provided on the first anti-reflection layer. A rear passivation layer is provided on the back side of the semiconductor substrate. A second anti-reflection layer is disposed on the rear passivation layer. A back electrode is disposed on the second anti-reflection layer.
    Type: Application
    Filed: November 17, 2021
    Publication date: March 10, 2022
    Applicant: TSEC Corporation
    Inventors: Cheng-Wen Kuo, Yung-Chih Li, Ying-Quan Wang, Sheng-Kai Wu, Wen-Ching Chu, Yu-Hui Liu, Ta-Ming Kuan, Hung Cheng, Jen-Ho Kang, Cheng-Yeh Yu
  • Publication number: 20210384364
    Abstract: A solar cell structure includes a semiconductor substrate having a front side and a back side; a pyramid structure disposed on the front side of the semiconductor substrate; a anti-reflection layer disposed on the pyramid structure; a front electrode provided on the anti-reflection layer; a passivation layer provided on the back side of the semiconductor substrate; a dielectric layer disposed on the passivation layer; and a back electrode disposed on the dielectric layer. The reflective layer is a multi-layer anti-reflection layer having at least three coating layers.
    Type: Application
    Filed: September 9, 2020
    Publication date: December 9, 2021
    Inventors: Cheng-Wen Kuo, Yung-Chih Li, Ying-Quan Wang, Sheng-Kai Wu, Wen-Ching Chu, Yu-Hui Liu, Ta-Ming Kuan, Hung Cheng, Jen-Ho Kang, Cheng-Yeh Yu