Patents by Inventor CHENG-XIAN YANG

CHENG-XIAN YANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and system for manufacturing semiconductor layer
    Patent number: 11876001
    Abstract: The present disclosure provides a method and system for manufacturing a semiconductor layer. The method includes: placing a first wafer in a cavity to form a metal film on the first wafer; before forming the metal film, the temperature inside the cavity is a first temperature; transferring the first wafer on which the metal film has been formed out of the cavity; the temperature in the cavity is a second temperature, and the second temperature is greater than the first temperature; introducing an inert gas into the cavity to cool the cavity, such that the temperature in the cavity is equal to the first temperature; after the temperature in the cavity is equal to the first temperature, placing a second wafer in the cavity to form the metal film on the second wafer. The manufacturing method can reduce the defects on the surface of the metal film.
    Type: Grant
    Filed: July 19, 2021
    Date of Patent: January 16, 2024
    Assignee: NEXCHIP SEMICONDUCTOR CORPORATION
    Inventors: Baoyou Gong, Chih-Hsien Huang, Jian-Zhi Fang, Cheng-Xian Yang
  • METHOD AND SYSTEM FOR MANUFACTURING SEMICONDUCTOR LAYER
    Publication number: 20220076966
    Abstract: The present disclosure provides a method and system for manufacturing a semiconductor layer. The method includes: placing a first wafer in a cavity to form a metal film on the first wafer; before forming the metal film, the temperature inside the cavity is a first temperature; transferring the first wafer on which the metal film has been formed out of the cavity; the temperature in the cavity is a second temperature, and the second temperature is greater than the first temperature; introducing an inert gas into the cavity to cool the cavity, such that the temperature in the cavity is equal to the first temperature; after the temperature in the cavity is equal to the first temperature, placing a second wafer in the cavity to form the metal film on the second wafer. The manufacturing method can reduce the defects on the surface of the metal film.
    Type: Application
    Filed: July 19, 2021
    Publication date: March 10, 2022
    Applicant: NEXCHIP SEMICONDUCTOR CORPORATION
    Inventors: BAOYOU GONG, CHIH-HSIEN HUANG, JIAN-ZHI FANG, CHENG-XIAN YANG