Patents by Inventor Cheng-Yan Zhan

Cheng-Yan Zhan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods and systems for dopant activation using microwave radiation
    Patent number: 9012315
    Abstract: Systems and methods are provided for activating dopants in a semiconductor structure. For example, a semiconductor structure including a plurality of dopants is provided. One or more microwave-absorption materials are provided, the microwave-absorption materials being capable of increasing an electric field density associated with the semiconductor structure. Microwave radiation is applied to the microwave-absorption materials and the semiconductor structure to activate the plurality of dopants for fabricating semiconductor devices. The microwave-absorption materials are configured to increase the electric field density in response to the microwave radiation so as to increase the semiconductor structure's absorption of the microwave radiation to activate the dopants.
    Type: Grant
    Filed: August 9, 2013
    Date of Patent: April 21, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Chun Hsiung Tsai, Yan-Ting Lin, Cheng-Yan Zhan, Yi-Tang Lin, Clement Hsingjen Wann
  • Methods and Systems for Dopant Activation Using Microwave Radiation
    Publication number: 20150041966
    Abstract: Systems and methods are provided for activating dopants in a semiconductor structure. For example, a semiconductor structure including a plurality of dopants is provided. One or more microwave-absorption materials are provided, the microwave-absorption materials being capable of increasing an electric field density associated with the semiconductor structure. Microwave radiation is applied to the microwave-absorption materials and the semiconductor structure to activate the plurality of dopants for fabricating semiconductor devices. The microwave-absorption materials are configured to increase the electric field density in response to the microwave radiation so as to increase the semiconductor structure's absorption of the microwave radiation to activate the dopants.
    Type: Application
    Filed: August 9, 2013
    Publication date: February 12, 2015
    Applicant: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Chun Hsiung Tsai, Yan-Ting Lin, Cheng-Yan Zhan, Yi-Tang Lin, Clement Hsingjen Wann