Abstract: The present invention provides a static random access memory (SRAM), the SRAM includes a substrate, a SRAM pattern disposed on the substrate, wherein the SRAM pattern at least includes a first gate structure, a second gate structure and a third gate structure, arranged along a first direction, wherein the second gate structure and the third gate structure are parallel to the first gate structure, and a gap is disposed between the second gate structure and the third gate structure, and wherein the first gate structure is composed of a first elongated structure, a second elongated structure and a curved structure disposed between the first elongated structure and the second elongated structure, and wherein the curved structure is aligned with the gap along a second direction, and an interconnection contact structure disposed between the first gate structure and the second gate structure, and arranged along the first direction.

Abstract: A semiconductor structure includes a semiconductor substrate, at least a silicon germanium (SiGe) epitaxial region disposed in the semiconductor substrate, and a contact structure disposed on the SiGe epitaxial region. The contact structure includes a titanium nitride (TiN) barrier layer and a metal layer surrounded by the TiN barrier layer. A crystalline titanium germanosilicide stressor layer is disposed in the SiGe epitaxial region and between the TiN barrier layer and the SiGe epitaxial region.

Abstract: A pixel structure including a first light-emitting diode element, a second light-emitting diode element and a first interconnection pattern is provided. The first interconnection pattern is disposed on and electrically connected to a first electrode of the first light-emitting diode element and a first electrode of the second light-emitting diode element. The first interconnection pattern is configured to be electrically connected to a drive element. The first interconnection pattern includes a first main portion and a second main portion. The first main portion extending in a first direction is disposed on the first electrode of the first light-emitting diode element. The second main portion extending in a second direction and connected to the first main portion is disposed on the first electrode of the second light-emitting diode element. The first direction and the second direction are crossed.

Abstract: A post placement abutment treatment for cell row design is provided. In an embodiment a first cell and a second cell are placed in a first cell row and a third cell and a fourth cell are placed into a second cell row. After placement vias connecting power and ground rails to the underlying structures are analyzed to determine if any can be merged or else removed completely. By merging and removing the closely placed vias, the physical limitations of photolithography may be by-passed, allowing for smaller structures to be formed.

Abstract: An interactive video game system includes an array of volumetric sensors disposed around a play area and configured to collect respective volumetric data for each of a plurality of players. The system includes a controller communicatively coupled to the array of volumetric sensors. The controller is configured to: receive, from the array of volumetric sensors, respective volumetric data of each of the plurality of players; to combine the respective volumetric data of each of the plurality of players to generate at least one respective model for each of the plurality of players; to generate a respective virtual representation for each player of the plurality of players based, at least in part, on the generated at least one respective model of each player of the plurality of players; and to present the generated respective virtual representation of each player of the plurality of players in a virtual environment.

Abstract: An elevatable supporting device for bearing a display is provided. The elevatable supporting device comprises an upright, an energy storage element, and a bearing module. The upright includes a first sliding structure and a second sliding structure which is non-parallel to the first sliding structure. The energy storage element abuts against the first sliding structure and the second sliding structure and includes a first arm providing a first resistance and a second arm providing a second resistance. A first included angle is defined between the first arm and the second arm. When the energy storage element moves from the highest position to the lowest position, the first included angle decreases so that one of the first resistance and the second resistance may increase in order to maintain a total effective resistance along the first axis. Accordingly, the display may be able to stop at any position between the highest position and the lowest position.

Abstract: A device substrate includes a receiving substrate, a micro light emitting element, a first wire, and a second wire is provided. The micro light emitting element is disposed on the receiving substrate. The micro light emitting element includes a first type semiconductor layer and a second type semiconductor layer. The first type semiconductor layer is disposed on the receiving substrate and has a first wire connecting surface away from the receiving substrate. The second type semiconductor layer is disposed on a part of the first type semiconductor layer and has a second wire connection surface away from the receiving substrate. The first wire is disposed on the first wire connection surface. The second wire is disposed on the second wire connection surface. A projection range of the first wire perpendicularly projected on the micro light emitting element and a projection range of the second wire perpendicularly projected on the micro light emitting element are at least partially overlap.

Abstract: An elevatable supporting device for bearing a display is provided. The elevatable supporting device comprises an upright, an energy storage element, and a bearing module. The upright includes a first surface and a second surface which is non-parallel to the first surface. The energy storage element abuts against the first surface and the second surface and includes a first arm providing a first resistance and a second arm providing a second resistance. A first included angle is defined between the first arm and the second arm. When the energy storage element moves from the highest position to the lowest position, the first included angle decreases so that one of the first resistance and the second resistance may increase in order to maintain a total effective resistance along the first axis. Accordingly, the display may be able to stop at any position between the highest position and the lowest position.

Abstract: A manufacturing method of a semiconductor device includes the following steps. A semiconductor substrate with gate structures formed thereon is provided. A source/drain region is formed in the semiconductor substrate and formed between the gate structures. A dielectric layer is formed on the source/drain region and located between the gate structures. An opening penetrating the dielectric layer on the source/drain region is formed. A lower portion of a first conductive structure is formed in the opening. A dielectric spacer is formed on the lower portion and on an inner wall of the opening. An upper portion of the first conductive structure is formed in the opening and on the lower portion. The dielectric spacer surrounds the upper portion of the first conductive structure. The first conductive structure is formed by two steps for forming the dielectric spacer surrounding the upper portion and improving the electrical performance of the semiconductor device.

Abstract: In one embodiment, a system includes a radio-frequency identification (RFID) reader configured to read data stored on an RFID tag associated with a user and to generate a first signal indicative of the data and indicative of a location of the RFID tag, a sensor system configured to detect a user interaction with an interactive element and to generate a second signal indicative of the user interaction, and a processor configured to match the user to the user interaction based on the first signal and the second signal and to update a user database to reflect that the user is matched to the user interaction.

Abstract: A semiconductor structure includes a semiconductor substrate, at least a silicon germanium (SiGe) epitaxial region disposed in the semiconductor substrate, and a contact structure disposed on the SiGe epitaxial region. The contact structure includes a titanium nitride (TiN) barrier layer and a metal layer surrounded by the TiN barrier layer. A crystalline titanium germanosilicide stressor layer is disposed in the SiGe epitaxial region and between the TiN barrier layer and the SiGe epitaxial region.

Abstract: A straightening device including: a plurality of rolling members, defining a first channel which is configured for a tubular member to pass therethrough, an extending direction of the first channel being transverse to at least one extending direction of at least one pivot of at least one of the rolling members; at least three shells, each of the at least three shells including two arm portions which are transversely connected with each other, the plurality of rolling members being rotatably disposed between the arm portions, at least one side of at least one of the arm portions having a protruding wall, the protruding wall extending along the at least one extending direction of the at least one pivot and being at least partially overlapped with at least one of the plurality of rolling members as viewed in a radial direction of the at least one pivot.

Abstract: A semiconductor structure includes a semiconductor substrate, at least a silicon germanium (SiGe) epitaxial region disposed in the semiconductor substrate, and a contact structure disposed on the SiGe epitaxial region. The contact structure includes a titanium nitride (TiN) barrier layer and a metal layer surrounded by the TiN barrier layer. A crystalline titanium germanosilicide stressor layer is disposed in the SiGe epitaxial region and between the TiN barrier layer and the SiGe epitaxial region.

Abstract: An entertainment system has an interactive component for an amusement park. The interactive component includes a detection device disposed within a housing and configured to read an identification tag via long range and short range radio communications, an interactive sensor disposed within the housing and configured to detect physical interaction with a portion of the interactive component, a control device communicatively coupled to the detection device and the interactive sensor, where the control device is configured to receive feedback from the detection device and the interactive sensor, an effect device configured to receive a signal from the control device and to generate an effect based on detection of the physical interaction, and a transmitter configured to transmit data to the identification tag based on detection of the physical interaction with the portion of the interactive component while detecting the identification tag within a threshold distance of the interactive component.

Abstract: A light emitting device including a first semiconductor layer, a light emitting layer, a second semiconductor layer, a first electrode, and a second electrode is provided. The light emitting layer is deposited between the first and the second semiconductor layers. The first semiconductor layer, the light emitting layer and the second semiconductor layer form a stepped structure including a first electrode connection surface, a second electrode connection surface, and a connection portion. The first electrode connection surface is located on the first semiconductor layer. The second electrode connection surface is located on the second semiconductor layer. The connection portion connects the first and the second electrode connection surfaces. The connection portion includes a first surface, a second surface, and a third surface. A first corner s formed between the first and the second surfaces. A second corner is formed between the second and the third surfaces.

Abstract: A dismantling tool comprises a main body, a pushing mechanism, and an insertion hole. The pushing mechanism includes a driving portion and a pushing portion. The driving portion is located at the main body. The pushing element is movably screwed with the driving portion. The insertion hole is formed on the main body for a handtool to insert therein for engagement.

Abstract: The rollable display device of the present invention includes a base, a cover, a rolling module, a display screen, an actuating unit and a supporting unit. When an external force is applied on the cover to switch the display screen from a retracting state into an expanding state, the display screen rolled on the rolling module would expand out of the base.

Abstract: The invention provides an audio-visual teaching platform, which includes an analysis subsystem, a recommendation subsystem and a training subsystem. The analysis subsystem provides a learning behavior data to enable the recommendation subsystem to generate at least one presumptive learning mode by using the learning behavior data, thereby generating a recommended learning combination. When the training subsystem receives the recommended learning combination, the training subsystem transmits an audio-visual knowledge content which is set to a user for watching and learning. Accordingly, the invention recommends the audio-visual knowledge content to the users with the same or similar presumptive learning mode, and analyzes the interaction between the users and the audio-visual knowledge content, so as to enable the users to really watch the audio-visual knowledge content and enhance their interest in learning.

Abstract: A method for forming a semiconductor device structure is provided. The method includes providing a semiconductor substrate. The method includes forming an isolation structure in the semiconductor substrate. The isolation structure surrounds a first active region and a second active region of the semiconductor substrate. The method includes forming a semiconductor strip structure over the semiconductor substrate. The semiconductor strip structure extends across the first active region, the second active region, and the isolation structure between the first active region and the second active region, the semiconductor strip structure has a P-type doped region, an N-type doped region, and a spacing region. The method includes performing an implantation process over the spacing region. The method includes forming a metal silicide layer over the semiconductor strip structure to cover the P-type doped region, the N-type doped region, and the spacing region.

Abstract: Aspects of the disclosure provide a method and an apparatus that perform a background media scan (BGMS) with improved efficiency. In particular, the disclosed BGMS processes can monitor data retention performance of a large capacity solid state drive (SSD) without significantly increasing scanning overhead by scanning only some sample pages of a memory block.