Abstract: In a method for forming an integrated semiconductor device, a first inter-layer dielectric (ILD) layer is formed over a semiconductor device that includes a first transistor structure, a two-dimensional (2D) material layer is formed over and in contact with the first ILD layer, the 2D material layer is patterned to form a channel layer of a second transistor structure, a source electrode and a drain electrode of the second transistor structure are formed over the patterned 2D material layer and laterally spaced apart from each other, a gate dielectric layer of the second transistor structure is formed over the patterned 2D material layer, the source electrode and the drain electrode, and a gate electrode of the second transistor structure is formed over the gate dielectric layer and laterally between the source electrode and the drain electrode.

Abstract: An adhesive composition is provided. The adhesive composition includes a mixture (A), wherein the mixture (A) includes a first component (a), a cross-linking agent (b), and a second component (c), wherein the second component (c) includes a calcium-containing complex compound or a calcium-containing compound. Based on the total weight of the mixture (A), a content of the first component (a) is from 40 to 80 wt %, a content of the cross-linking agent (b) is from 20 to 60 wt %, and a content of the second component (c) is from 1 to 20 wt %. Specifically, the calcium-containing complex compound is selected from the group consisting of a compound represented by formula (1), a compound represented by formula (2), a compound represented by formula (3), and a compound represent by formula (4), and the calcium-containing compound is selected from the group consisting of a compound represented by formula (5) and a compound represent by formula (6).