Abstract: A semiconductor package including a first semiconductor die, a second semiconductor die, a first insulating encapsulation, a dielectric layer structure, a conductor structure and a second insulating encapsulation is provided. The first semiconductor die includes a first semiconductor substrate and a through silicon via (TSV) extending from a first side to a second side of the semiconductor substrate. The second semiconductor die is disposed on the first side of the semiconductor substrate. The first insulating encapsulation on the second semiconductor die encapsulates the first semiconductor die. A terminal of the TSV is coplanar with a surface of the first insulating encapsulation. The dielectric layer structure covers the first semiconductor die and the first insulating encapsulation. The conductor structure extends through the dielectric layer structure and contacts with the through silicon via.

Abstract: A semiconductor device comprises a fin structure disposed over a substrate; a gate structure disposed over part of the fin structure; a source/drain structure, which includes part of the fin structure not covered by the gate structure; an interlayer dielectric layer formed over the fin structure, the gate structure, and the source/drain structure; a contact hole formed in the interlayer dielectric layer; and a contact material disposed in the contact hole. The fin structure extends in a first direction and includes an upper layer, wherein a part of the upper layer is exposed from an isolation insulating layer. The gate structure extends in a second direction perpendicular to the first direction. The contact material includes a silicon phosphide layer and a metal layer.

Abstract: A blind lifting control module includes a transmitting wheel, an anti-backward unit and a driving unit disposed to a supporting unit. The transmitting wheel for connecting a blind reeled horizontal axle has ratchet portions respectively meshable with corresponding ratchet portions of an anti-backward wheel and a driving reel. A pull cord is reeled on the driving reel and has a free end passing through a thrust member and a hindering member, and is pulled to release the anti-backward wheel to permit lowering of a blind. The thrust member is turned by pulling of the pull cord to thrust the driving reel to mesh with the transmitting wheel for lifting the blind.

Abstract: A piezoresistive pressure sensor includes a substrate and a silicon device layer. The substrate has a cavity. The silicon device layer includes a diaphragm and a support element. A top surface of the diaphragm is connected to a top surface of the support element by one or more side surfaces. A recess of the silicon device layer is defined by the top surface of the diaphragm and the one or more side surfaces. A plurality of piezoresistive regions are on the top surface of the diaphragm, on the one or more side surfaces and on the top surface of the support element. A plurality of conductive regions are on the top surface of the support element. The plurality of conductive regions do not extend to the top surface of the diaphragm. The plurality of piezoresistive regions have a first ion dosage concentration. The plurality of conductive regions have a second ion dosage concentration. The second ion dosage concentration is greater than the first ion dosage concentration.

Abstract: A piezoresistive pressure sensor includes a substrate and a silicon device layer. The substrate has a cavity. The silicon device layer includes a diaphragm and a support element. A top surface of the diaphragm is connected to a top surface of the support element by one or more side surfaces. A recess of the silicon device layer is defined by the top surface of the diaphragm and the one or more side surfaces. A plurality of piezoresistive regions are on the top surface of the diaphragm, on the one or more side surfaces and on the top surface of the support element. A plurality of conductive regions are on the top surface of the support element. The plurality of conductive regions do not extend to the top surface of the diaphragm. The plurality of piezoresistive regions have a first ion dosage concentration. The plurality of conductive regions have a second ion dosage concentration. The second ion dosage concentration is greater than the first ion dosage concentration.

Abstract: A solar cell module is described, including a series of solar cells each including a bottom electrode, a photoelectric conversion layer, an insulating pattern, a top electrode layer and a passivation layer. The conversion layer is on the bottom electrode and also on the substrate at a first side of the bottom electrode. The insulating pattern is on the bottom electrode, covering an edge portion of the conversion layer near a second side of the bottom electrode. The top electrode layer is on the conversion layer and adjacent to the insulating pattern. The passivation layer is on the top electrode layer and adjacent to the insulating pattern, wherein the top of the passivation layer on the top electrode layer is lower than the top of the insulating pattern. The bottom electrode of a solar cell is electrically connected with the top electrode layer of an adjacent solar cell.

Abstract: The present application provides a chromoprotein (shCP), comprising amino acid sequences with greater than 96% consistency of SEQ ID NO: 1. The chromoprotein is derived from Stichodactyla haddoni and has an absorption spectrum of 350˜650 nm. The present application also provides a nucleic acid sequence, comprising a nucleic acid sequence encoding the amino acid sequence of the shCP. The present application further provides a vector, comprising the nucleic acid sequence of the shCP. The present application still provides a host, including the vector carried with the nucleic acid sequence of the shCP.

Abstract: This invention is related to a seizure prediction method with an on-line retraining scheme. The seizure prediction method can self-learn the preictal and interictal waveforms of patients suffering from seizure with long-term brain signal monitoring, and can also distinguish the preictal waveforms from the interictal waveforms in real time to efficiently predict seizure. This invention also provides a seizure prediction module and a seizure prediction device to carry out the seizure prediction method.

Abstract: A conductive film structure capable of resisting moisture and oxygen and an electronic apparatus using the same are provided. The conductive film structure includes a metal electrode, a metal oxide layer, and an insulating layer. The metal oxide layer is disposed on the metal electrode and includes an oxide of the metal electrode. The insulating layer covers the metal oxide layer and has at least one pinhole therein.

Abstract: A solar cell module is described, including a series of solar cells each including a bottom electrode, a photoelectric conversion layer, an insulating pattern, a top electrode layer and a passivation layer. The conversion layer is on the bottom electrode and also on the substrate at a first side of the bottom electrode. The insulating pattern is on the bottom electrode, covering an edge portion of the conversion layer near a second side of the bottom electrode. The top electrode layer is on the conversion layer and adjacent to the insulating pattern. The passivation layer is on the top electrode layer and adjacent to the insulating pattern, wherein the top of the passivation layer on the top electrode layer is lower than the top of the insulating pattern. The bottom electrode of a solar cell is electrically connected with the top electrode layer of an adjacent solar cell.

Abstract: An organic field effect transistor (OFET) having a block copolymer (BCP) layer is provided. The OFET includes a gate, an optional dielectric layer, a BCP layer, an organic semiconductor layer, a drain, and a source. The BCP layer is formed between the dielectric layer and the organic semiconductor layer when the dielectric layer exists. Otherwise, the BCP layer is formed between the gate and the organic semiconductor layer when the dielectric layer does not exist. When being positioned between the gate and the organic semiconductor layer without the dielectric layer, the BCP layer also functions as a dielectric layer. Inclusion of the BCP layer enhances the electrical properties, such as the charge carrier mobility, of the OFET.