Abstract: A thermally conductive board includes a top metal layer, a bottom metal layer, and an electrically insulating but thermally conductive layer (for simplification hereinafter referred to as “thermally conductive layer”) laminated between the top metal layer and the bottom metal layer. The thermally conductive layer includes a polymer matrix and a thermally conductive filler dispersed in the polymer matrix. The polymer matrix includes an epoxy-based composition consisting of epoxy and chlorine-containing impurities. The chlorine content of the thermally conductive layer is lower than 300 ppm.

Abstract: A semiconductor memory device includes a substrate having a conductor region thereon, an interlayer dielectric layer on the substrate, and a conductive via electrically connected to the conductor region. The conductive via has a lower portion embedded in the interlayer dielectric layer and an upper portion protruding from a top surface of the interlayer dielectric layer. The upper portion has a rounded top surface. A storage structure conformally covers the rounded top surface.

Abstract: A power converter includes an input circuit, a conversion circuit, an output circuit and a processor. The input circuit is configured to receive and detect a front stage power from a front stage device. The conversion circuit is coupled to the input circuit. The output circuit is coupled to the conversion circuit and configured to supply power to a back stage device. The processor is coupled to the input circuit, the conversion circuit and the output circuit. The processor is configured to determine whether the front stage power is stable, and is configured to handshake with the back stage device to confirm a conversion power agreed by the back stage device. The processor is further configured to control the conversion circuit to operate at the conversion power, so as to generate an output power to the back stage device.

Abstract: A hybrid power conversion circuit includes a high-side switch, a low-side switch, a transformer, a resonance tank, a first switch, a second switch, a first synchronous rectification switch, a second synchronous rectification switch, and a third switch. The resonance tank has an external inductor, an external capacitance, and an internal inductor. The first switch is connected to the external inductor. The second switch and a first capacitance form a series-connected path, and is connected to the external capacitance. The first and second synchronous rectification switches are respectively coupled to a first winding and a second winding. The third switch is connected to the second synchronous rectification switch. When an output voltage is less than a voltage interval, the hybrid power conversion circuit operates in a hybrid flyback conversion mode, and otherwise the hybrid power conversion circuit operates in a resonance conversion mode.

Abstract: A dual-polarized patch antenna includes a radiator layer, at least one middle layer disposed below the radiator layer, a ground plane layer disposed below the middle layer to provide a reference potential, and a feed layer disposed below the ground plane layer. The radiator layer includes an insulation substrate that has a top surface and a bottom surface, a base patch that is disposed on the bottom surface, and a top patch that is disposed on the top surface, and that is spaced apart from the base patch by a patch distance. The top patch includes a center portion and an annular portion that encircles and is spaced apart from the center portion. The feed layer includes a feed substrate and two feed lines. The two feed lines are arranged substantially perpendicular to each other for feeding electrical signals.

Abstract: Provided are a non-volatile memory device and a manufacturing method thereof. The non-volatile memory device includes a substrate having a memory region and a dummy region surrounding the memory region, an interconnect structure, memory cells, conductive vias and dummy vias. The interconnect structure is disposed on the substrate and in the memory region. The memory cells are disposed on the interconnect structure and arranged in an array when viewed from a top view. The memory cells include first memory cells in the memory region and second memory cells in the dummy region. The conductive vias are disposed in the memory region and between the first memory cells and the interconnection structure to electrically connect each of the first memory cells to the interconnect structure. The dummy vias are disposed in the dummy region and surround the memory region.

Abstract: A hybrid power conversion circuit includes a high-side switch, a low-side switch, a transformer, a resonance tank, a first switch, a second switch, a first synchronous rectification switch, a second synchronous rectification switch, and a third switch. The resonance tank has an external inductor, an external capacitance, and an internal inductor. The first switch is connected to the external inductor. The second switch and a first capacitance form a series-connected path, and is connected to the external capacitance. The first and second synchronous rectification switches are respectively coupled to a first winding and a second winding. The third switch is connected to the second synchronous rectification switch. When an output voltage is less than a voltage interval, the hybrid power conversion circuit operates in a hybrid flyback conversion mode, and otherwise the hybrid power conversion circuit operates in a resonance conversion mode.

Abstract: The disclosure provides a power transmission system and method. The power transmission method includes: determining to perform a charging operation or a discharge operation between a battery module and a power supplying/receiving module according to a handshake procedure performed by a power transmission module. Performing the charging operation includes: adjusting a supply voltage outputted by the power supplying/receiving module; and converting the supply voltage into a charging voltage received by the battery module to charge the battery module. Performing the discharging operation includes: converting a discharge voltage outputted by the battery module into a required voltage required by the power supplying/receiving module to supply the power supplying/receiving module. The charging operation or the discharging operation is performed in a maximum power mode, an optimal efficiency mode or a combination thereof between the battery module and the power supplying/receiving module.

Abstract: The present disclosure provides a DC motor driving system including a DC motor, a power supply device, a switch circuit, and a microprocessor. The power supply device provides an input electrical energy. The switch circuit receives the input electrical energy and outputs a motor electrical energy, which includes a motor power and a motor voltage, to the DC motor. The DC motor driving system switchably works in a constant-voltage mode, a first variable-voltage mode, or a second variable-voltage mode. In the constant-voltage mode, the input electrical energy remains unchanged. In the first variable-voltage mode, the microprocessor controls the power supply device to adjust the input electrical energy for increasing the motor voltage and the motor power. In the second variable-voltage mode, the microprocessor controls the power supply device to adjust the input electrical energy for decreasing the motor voltage and keeping the motor power unchanged.

Abstract: A hybrid power conversion circuit includes a high-side switch, a low-side switch, a transformer, a resonance tank, a first switch, a second switch, a first synchronous rectification switch, a second synchronous rectification switch, and a third switch. The resonance tank has an external inductor, an external capacitance, and an internal inductor. The first switch is connected to the external inductor. The second switch and a first capacitance form a series-connected path, and is connected to the external capacitance. The first and second synchronous rectification switches are respectively coupled to a first winding and a second winding. The third switch is connected to the second synchronous rectification switch. When an output voltage is less than a voltage interval, the hybrid power conversion circuit operates in a hybrid flyback conversion mode, and otherwise the hybrid power conversion circuit operates in a resonance conversion mode.

Abstract: A method for production analysis includes: receiving production data at a processor from a plurality of tools spatially arranged within a manufacturing facility; creating a hierarchal topology of the data in the processor, wherein each level of the hierarchal topology is based on a different one of a plurality of static parameters that are selected from a list consisting of: a tool identifier, a batch identifier, and a spatial orientation; displaying, at a user interface implemented by the processor, a first analysis of a first level of the hierarchal topology, wherein the analysis contains parameters related to other levels of the hierarchal topology; receiving, via the user interface, a selection by a user of a first parameter displayed on the first analysis; and updating the user interface to display a second analysis of a second level of the hierarchal topology that is related to the first parameter.

Abstract: A semiconductor memory device includes a substrate having a conductor region thereon, an interlayer dielectric layer on the substrate, and a conductive via electrically connected to the conductor region. The conductive via has a lower portion embedded in the interlayer dielectric layer and an upper portion protruding from a top surface of the interlayer dielectric layer. The upper portion has a rounded top surface. A storage structure conformally covers the rounded top surface.

Abstract: A power supply system is provided. The power supply system includes a power supply, a main load unit, a DC-DC voltage conversion unit, a bypass unit, and at least one sub-load unit. The power supply is configured to provide an adjustable supply voltage. The main load unit is electrically connected to the power supply for receiving the supply voltage. The DC-DC voltage conversion unit is electrically connected to the power supply. The bypass unit is electrically connected to the power supply. The at least one sub-load unit is electrically connected to the DC-DC voltage conversion unit and the bypass unit. When the main load unit stops operating, the power supply adjusts the supply voltage and provides the adjusted supply voltage to the sub-load unit through the bypass unit.

Abstract: A semiconductor memory device includes a substrate having a conductor region thereon, an interlayer dielectric layer on the substrate, and a conductive via electrically connected to the conductor region. The conductive via has a lower portion embedded in the interlayer dielectric layer and an upper portion protruding from a top surface of the interlayer dielectric layer. The upper portion has a rounded top surface. A storage structure conformally covers the rounded top surface.

Abstract: A connector is disclosed and includes a housing base, a conductive terminal, a signal terminal and a protrusion. A sleeve of an electronic device end sleeves on the housing base through an opening end along a first direction and slides a first displacement distance, plural contact pins of the electronic device end slide into the accommodation space through the opening end, and a conductive contact pin of the electronic device end is interfered with the conductive terminal to form an electrical connection. The protrusion is elastically connected to the housing base and penetrates through the housing base. When the sleeve passes through the opening end and slides a second displacement distance greater than the first displacement distance, the protrusion is interfered with the sleeve and drives the signal terminal, so that the signal terminal pushes against a signal contact pin of the electronic device end to form an electrical connection.

Abstract: A connector is disclosed and includes a main body, a sleeving component, a conductive terminal and a signal terminal. The main body has an opening end and a sleeved end opposite to each other. An electronic device end is matched with the connector through the opening end. The sleeving component is slidably disposed on the sleeved end, and includes a conductive contact portion and a signal contact portion arranged in parallel. The conductive terminal is fixed to the main body for connecting with the conductive contact portion. The signal terminal is fixed to the main body for connecting with the signal contact portion. When the connector is detached from the electronic device end, the sleeving component is displaced relative to the main body, the signal contact portion is separated from the signal terminal, and the conductive terminal end and the conductive contact portion are maintained in an electrical connection.

Abstract: A hybrid power conversion circuit includes a high-side switch, a low-side switch, a transformer, a resonance tank, a first switch, a second switch, a first synchronous rectification switch, a second synchronous rectification switch, and a third switch. The resonance tank has an external inductor, an external capacitance, and an internal inductor. The first switch is connected to the external inductor. The second switch and a first capacitance form a series-connected path, and is connected to the external capacitance. The first and second synchronous rectification switches are respectively coupled to a first winding and a second winding. The third switch is connected to the second synchronous rectification switch. When an output voltage is less than a voltage interval, the hybrid power conversion circuit operates in a hybrid flyback conversion mode, and otherwise the hybrid power conversion circuit operates in a resonance conversion mode.

Abstract: The present disclosure provides a DC motor driving system including a DC motor, a power supply device, a switch circuit, and a microprocessor. The power supply device provides an input electrical energy. The switch circuit receives the input electrical energy and outputs a motor electrical energy, which includes a motor power and a motor voltage, to the DC motor. The DC motor driving system switchably works in a constant-voltage mode, a first variable-voltage mode, or a second variable-voltage mode. In the constant-voltage mode, the input electrical energy remains unchanged. In the first variable-voltage mode, the microprocessor controls the power supply device to adjust the input electrical energy for increasing the motor voltage and the motor power. In the second variable-voltage mode, the microprocessor controls the power supply device to adjust the input electrical energy for decreasing the motor voltage and keeping the motor power unchanged.

Abstract: An adapter with power delivery function includes a power transmission module, a first input connector, and an output connector. The power transmission module includes a bidirectional DC charging and discharging circuit, a bypass circuit, and a control circuit. The control circuit is coupled to the bidirectional DC charging and discharging circuit and the bypass circuit. The first input connector is coupled to the bidirectional DC charging and discharging circuit, the bypass circuit, and the control circuit. The first input connector includes a high voltage level pin, a low voltage level pin, and an identification pin. The output pin is coupled to the bidirectional DC charging and discharging circuit and the bypass circuit. The present disclosure further provides an electric vehicle and a wire with power delivery function.

Abstract: Provided are a non-volatile memory device and a manufacturing method thereof. The non-volatile memory device includes a substrate having a memory region and a dummy region surrounding the memory region, an interconnect structure, memory cells, conductive vias and dummy vias. The interconnect structure is disposed on the substrate and in the memory region. The memory cells are disposed on the interconnect structure and arranged in an array when viewed from a top view. The memory cells include first memory cells in the memory region and second memory cells in the dummy region. The conductive vias are disposed in the memory region and between the first memory cells and the interconnection structure to electrically connect each of the first memory cells to the interconnect structure. The dummy vias are disposed in the dummy region and surround the memory region.