Abstract: An electronic device includes a chip and a circuit structure layer overlapped with the chip. The circuit structure layer includes a redistribution structure layer and an element structure layer, and the redistribution structure layer and the element structure layer are electrically connected to the chip. At least one of the redistribution structure layer and the element structure layer includes at least one opening, and in a normal direction of the electronic device, the at least one opening is overlapped with aside of the chip.

Abstract: The magnetic head slider material of the present invention is constituted by a sintered body containing 100 parts by weight of alumina, 20 to 150 parts by weight of titanium carbide and silicon carbide in total, and 0.2 to 9 parts by weight of carbon.

Abstract: A thin film magnetic read/write head for use in magnetic data storage systems to enable writing of data to a magnetic data storage medium with the assistance of laser heating. The read/write head allows magnetic reading of data from the storage medium, and thermally assisted magnetic writing of data on the storage medium. A waveguide is provided in a write gap in the form of an optical circuit having a plurality of inputs and a single output at the air bearing surface (ABS) for concentrating laser light used for heating the storage medium during the write operation. The thermally assisted magnetic writing improves the thermal stability of the recorded data and usefulness thereof throughout a wide temperature range.

Abstract: According to an embodiment of the present invention, a slider design is presented that provides improved protection for the head/sensor of the slider. In one embodiment, the design of the slider is such that ESD protection is provided during the slider wafer process, the “back-end” processes (e.g., when the completed slider/head is incorporated into an HGA), and during operation in a disk drive or the like. In this embodiment, a conductive film is provided that surrounds the insulating-material slider substrate. The conductive film provides a grounding path during the wafer fabrication processes. This conductive layer may be further patterned during head fabrication to provide a ground path for back-end fabrication processes. A conductive stripe may be added for discharging debris in the slider-to-disk interface.

Abstract: A method for forming via holes having a rounded sidewall profile includes exposing a layer or organic positive photoresist to a formic gas plasma while the surface of the photoresist layer is bombarded with ions and electrons in a high voltage biased environment in which the photoresist layer is capacitively coupled. The photoresist layer may be exposed to UV light either before or after the formic gas plasma step.

Abstract: Continuous films are formed on a substrate by coating said substrate with a solution of a diacetylenic prepolymer in a liquid phenylacetylene solvent and reacting the solvent with the prepolymer.

Abstract: A dynamic random access memory is fabricated on a monolithic chip of semiconductor material. The memory is formed of an array of memory cells controlled for reading and writing by word and bit lines which are selectively connected to the cells. Each cell is a single field effect transistor structure having improved electrical charge storage capability. The improved charge storage capability of each cell is provided by an electrical capacitance structure uniquely arranged and formed as an integral portion of the field effect transistor structure. The gate electrode of each field effect transistor structure is connected to a predetermined one of said word lines. The drain of each field effect transistor is connected to a predetermined one of said bit lines. The source of each field effect transistor structure is integrally connected to and forms a portion of the uniquely arranged electrical capacitance structure of the field effect transistor structure.

Abstract: A dynamic random access memory is fabricated on a monolithic chip of semiconductor material. The memory is formed of an array of memory cells controlled for reading and writing by word and bit lines which are selectively connected to the cells. Each cell is a single field effect transistor structure having improved electrical charge storage capability. The improved charge storage capability of each cell is provided by an electrical capacitance structure uniquely arranged and formed as an integral portion of the field effect transistor structure. The gate electrode of each field effect transistor structure is connected to a predetermined one of said word lines. The drain of each field effect transistor is connected to a predetermined one of said bit lines. The source of each field effect transistor structure is integrally connected to and forms a portion of the uniquely arranged electrical capacitance structure of the field effect transistor structure.

Abstract: A silicon etchant is disclosed composed of an aqueous solution of a fluoride ion and oxygen maintained at a substantially neutral pH. The etchant eliminates the problems of stripping organic photoresists, maintaining silicon/phosphosilicate glass selectively, silicon surface pitting, oxide residues, and insoluble reaction products.

Abstract: A family of etchants for polycrystalline silicon based upon an aqueous solution of NR.sub.4 OH, where R is an alkyl group, has a relatively low etching rate enabling the exercise of better control over the delineation of fine structures.