Patents by Inventor Cheng-Yih Liu

Cheng-Yih Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190245198
    Abstract: A N-doped Si/C composite and a manufacture method thereof are provided. The N-doped Si/C composite includes a plurality of carbon-silicon particles. Each of the plurality of carbon-silicon particles includes one or more silicon particles and a carbon coating layer covering the one or more silicon particles, wherein a plurality of first nitrogen atoms is distributed in the one or more silicon particles of each carbon-silicon particle via a silicon-nitrogen bond, and a plurality of second nitrogen atoms is distributed in the carbon coating layer of each carbon-silicon particle via a nitrogen-carbon bond.
    Type: Application
    Filed: August 14, 2018
    Publication date: August 8, 2019
    Applicant: GET Green Energy Corp., Ltd.
    Inventors: Wei-Jen Liu, Cheng-Che Hsieh, Jiann-Yih Yeh, Shin-Lee Liu
  • Patent number: 7345849
    Abstract: The magnetic head slider material of the present invention is constituted by a sintered body containing 100 parts by weight of alumina, 20 to 150 parts by weight of titanium carbide and silicon carbide in total, and 0.2 to 9 parts by weight of carbon.
    Type: Grant
    Filed: June 27, 2005
    Date of Patent: March 18, 2008
    Assignees: TDK Corporation, SAE Magnetics (H.K.) Ltd.
    Inventors: Yukio Kawaguchi, Kei Sugiura, Masahiro Itoh, Minoru Sakurabayashi, Atsushi Hitomi, Cheng Yih Liu
  • Patent number: 7310206
    Abstract: A thin film magnetic read/write head for use in magnetic data storage systems to enable writing of data to a magnetic data storage medium with the assistance of laser heating. The read/write head allows magnetic reading of data from the storage medium, and thermally assisted magnetic writing of data on the storage medium. A waveguide is provided in a write gap in the form of an optical circuit having a plurality of inputs and a single output at the air bearing surface (ABS) for concentrating laser light used for heating the storage medium during the write operation. The thermally assisted magnetic writing improves the thermal stability of the recorded data and usefulness thereof throughout a wide temperature range.
    Type: Grant
    Filed: December 28, 2004
    Date of Patent: December 18, 2007
    Assignee: SAE Magnetics (H.K.) Ltd.
    Inventors: Cheng Yih Liu, Mike Chang, Takehiro Kamigama
  • Patent number: 7239488
    Abstract: According to an embodiment of the present invention, a slider design is presented that provides improved protection for the head/sensor of the slider. In one embodiment, the design of the slider is such that ESD protection is provided during the slider wafer process, the “back-end” processes (e.g., when the completed slider/head is incorporated into an HGA), and during operation in a disk drive or the like. In this embodiment, a conductive film is provided that surrounds the insulating-material slider substrate. The conductive film provides a grounding path during the wafer fabrication processes. This conductive layer may be further patterned during head fabrication to provide a ground path for back-end fabrication processes. A conductive stripe may be added for discharging debris in the slider-to-disk interface.
    Type: Grant
    Filed: March 9, 2004
    Date of Patent: July 3, 2007
    Assignee: SAE Magnetics (H.K.), Ltd.
    Inventors: Li-Yan Zhu, Kazumasa Yasuda, Cheng Yih Liu, Winston Jose
  • Patent number: 4552831
    Abstract: A method for forming via holes having a rounded sidewall profile includes exposing a layer or organic positive photoresist to a formic gas plasma while the surface of the photoresist layer is bombarded with ions and electrons in a high voltage biased environment in which the photoresist layer is capacitively coupled. The photoresist layer may be exposed to UV light either before or after the formic gas plasma step.
    Type: Grant
    Filed: February 6, 1984
    Date of Patent: November 12, 1985
    Assignee: International Business Machines Corporation
    Inventor: Cheng-Yih Liu
  • Patent number: 4258079
    Abstract: Continuous films are formed on a substrate by coating said substrate with a solution of a diacetylenic prepolymer in a liquid phenylacetylene solvent and reacting the solvent with the prepolymer.
    Type: Grant
    Filed: December 13, 1979
    Date of Patent: March 24, 1981
    Assignee: International Business Machines Corporation
    Inventors: James Economy, Mary Ann Flandera, Cheng-Yih Liu
  • Patent number: 4240845
    Abstract: A dynamic random access memory is fabricated on a monolithic chip of semiconductor material. The memory is formed of an array of memory cells controlled for reading and writing by word and bit lines which are selectively connected to the cells. Each cell is a single field effect transistor structure having improved electrical charge storage capability. The improved charge storage capability of each cell is provided by an electrical capacitance structure uniquely arranged and formed as an integral portion of the field effect transistor structure. The gate electrode of each field effect transistor structure is connected to a predetermined one of said word lines. The drain of each field effect transistor is connected to a predetermined one of said bit lines. The source of each field effect transistor structure is integrally connected to and forms a portion of the uniquely arranged electrical capacitance structure of the field effect transistor structure.
    Type: Grant
    Filed: February 4, 1980
    Date of Patent: December 23, 1980
    Assignee: International Business Machines Corporation
    Inventors: Ronald P. Esch, Robert M. Folsom, Cheng-Yih Liu, Vincent L. Rideout, Donald A. Soderman, George T. Wenning
  • Patent number: 4219834
    Abstract: A dynamic random access memory is fabricated on a monolithic chip of semiconductor material. The memory is formed of an array of memory cells controlled for reading and writing by word and bit lines which are selectively connected to the cells. Each cell is a single field effect transistor structure having improved electrical charge storage capability. The improved charge storage capability of each cell is provided by an electrical capacitance structure uniquely arranged and formed as an integral portion of the field effect transistor structure. The gate electrode of each field effect transistor structure is connected to a predetermined one of said word lines. The drain of each field effect transistor is connected to a predetermined one of said bit lines. The source of each field effect transistor structure is integrally connected to and forms a portion of the uniquely arranged electrical capacitance structure of the field effect transistor structure.
    Type: Grant
    Filed: November 11, 1977
    Date of Patent: August 26, 1980
    Assignee: International Business Machines Corporation
    Inventors: Ronald P. Esch, Robert M. Folsom, Cheng-Yih Liu, Vincent L. Rideout, Donald A. Soderman, G. Thomas Wenning
  • Patent number: 4171242
    Abstract: A silicon etchant is disclosed composed of an aqueous solution of a fluoride ion and oxygen maintained at a substantially neutral pH. The etchant eliminates the problems of stripping organic photoresists, maintaining silicon/phosphosilicate glass selectively, silicon surface pitting, oxide residues, and insoluble reaction products.
    Type: Grant
    Filed: March 8, 1978
    Date of Patent: October 16, 1979
    Assignee: International Business Machines Corporation
    Inventor: Cheng-Yih Liu
  • Patent number: 4113551
    Abstract: A family of etchants for polycrystalline silicon based upon an aqueous solution of NR.sub.4 OH, where R is an alkyl group, has a relatively low etching rate enabling the exercise of better control over the delineation of fine structures.
    Type: Grant
    Filed: December 16, 1977
    Date of Patent: September 12, 1978
    Assignee: International Business Machines Corporation
    Inventors: Ernest Bassous, Cheng-Yih Liu