Abstract: Dipole engineering techniques are disclosed that incorporate dipole dopant and/or nitrogen into gate dielectrics (e.g., high-k dielectric layers thereof) to realize multi-threshold voltage transistor tuning of transistors. The dipole engineering techniques include (1) forming a dipole dopant source layer over gate dielectrics of some transistors, but not other transistors, (2) forming a mask over gate dielectrics of some transistors, but not other transistors, (3) performing a nitrogen-containing thermal drive-in process, and (4) removing the dipole dopant source layer and the mask after the nitrogen-containing thermal drive-in process. The nitrogen-containing thermal drive-in process diffuses nitrogen and dipole dopant (n-dipole dopant and/or p-dipole dopant) into unmasked gate dielectrics having the dipole dopant source layer formed thereon, nitrogen into unmasked gate dielectrics, and dipole dopant into masked gate dielectrics having the dipole dopant source layer formed thereon.

Abstract: Dipole engineering techniques are disclosed that incorporate dipole dopant and/or nitrogen into gate dielectrics (e.g., high-k dielectric layers thereof) to realize multi-threshold voltage transistor tuning of transistors. The dipole engineering techniques include (1) forming a dipole dopant source layer over gate dielectrics of some transistors, but not other transistors, (2) forming a mask over gate dielectrics of some transistors, but not other transistors, (3) performing a nitrogen-containing thermal drive-in process, and (4) removing the dipole dopant source layer and the mask after the nitrogen-containing thermal drive-in process. The nitrogen-containing thermal drive-in process diffuses nitrogen and dipole dopant (n-dipole dopant and/or p-dipole dopant) into unmasked gate dielectrics having the dipole dopant source layer formed thereon, nitrogen into unmasked gate dielectrics, and dipole dopant into masked gate dielectrics having the dipole dopant source layer formed thereon.

Abstract: A package structure includes a carrier, a frame, and at least one photonic device. The carrier includes a substrate and a plurality of first metal pads and second metal pads. The substrate includes a first surface and a second surface that are opposite to each other. The first metal pads are disposed on the first surface. The second metal pads are disposed on the second surface. A thickness of each of the second metal pads is greater than that of each of the first metal pads. The frame is disposed on the carrier, and an accommodating space is formed between the frame and the carrier. The at least one photonic device is disposed in the accommodating space.

Abstract: A reordering method performed by a receiving apparatus is provided. The receiving apparatus may receive a first PPDU from a transmitting apparatus, wherein the first PPDU includes a plurality of MPDUs, and the MPDUs correspond to the same BA window. The receiving apparatus may determine a traffic that each of the MPDUs belongs to according to an MPDU identification, wherein traffics that the plurality of MPDUs belonging to include a first traffic and a second traffic which is different from the first traffic. The receiving apparatus may perform a reordering operation for the MPDUs belonging to the first traffic, and a reordering operation for the MPDUs belonging to the second traffic, respectively. The receiving apparatus may transmit a BA frame in response to the first PPDU to the transmitting apparatus, wherein the BA frame includes information for indicating whether the MPDUs in the first PPDU have been successfully received.

Abstract: Dipole engineering techniques are disclosed that incorporate dipole dopant and/or nitrogen into gate dielectrics (e.g., high-k dielectric layers thereof) to realize multi-threshold voltage transistor tuning of transistors. The dipole engineering techniques include (1) forming a dipole dopant source layer over gate dielectrics of some transistors, but not other transistors, (2) forming a mask over gate dielectrics of some transistors, but not other transistors, (3) performing a nitrogen-containing thermal drive-in process, and (4) removing the dipole dopant source layer and the mask after the nitrogen-containing thermal drive-in process. The nitrogen-containing thermal drive-in process diffuses nitrogen and dipole dopant (n-dipole dopant and/or p-dipole dopant) into unmasked gate dielectrics having the dipole dopant source layer formed thereon, nitrogen into unmasked gate dielectrics, and dipole dopant into masked gate dielectrics having the dipole dopant source layer formed thereon.

Abstract: A method and device for removing an electromagnetic core, the method including: using an electromagnet to magnetize or demagnetize a metallic upper nozzle when a magneto-conductive workpiece is cut off in a WEDM manner; attracting a core capable of being completely cut off and separated in the workpiece; utilizing the metallic upper nozzle to detect whether attracted; if the core is attracted, moving the core to a target area; demagnetizing and dropping the core in a trash area. The device is applied to a WEDM machine; after the metallic magneto-conductive upper nozzle is magnetized by the electromagnet, the upper nozzle is used to attract the magneto-conductive core; a metallic water spray cover is utilized to detect whether the core is attracted; the core is moved to the target area by a motion system of the WEDM machine, and dropped in a trash device after the upper nozzle is demagnetized.

Abstract: A method and device for removing an electromagnetic core, the method including: using an electromagnet to magnetize or demagnetize a metallic upper nozzle when a magneto-conductive workpiece is cut off in a WEDM manner; attracting a core capable of being completely cut off and separated in the workpiece; utilizing the metallic upper nozzle to detect whether attracted; if the core is attracted, moving the core to a target area; demagnetizing and dropping the core in a trash area. The device is applied to a WEDM machine; after the metallic magneto-conductive upper nozzle is magnetized by the electromagnet, the upper nozzle is used to attract the magneto-conductive core; a metallic water spray cover is utilized to detect whether the core is attracted; the core is moved to the target area by a motion system of the WEDM machine, and dropped in a trash device after the upper nozzle is demagnetized.

Abstract: A decorative substrate and a touch panel are provided. The decorative substrate has a first region and a second region at least partially surrounding the first region. The decorative substrate includes a substrate, a decorative layer and a protective layer. The substrate has a first surface and a first sidewall. The decorative layer is disposed on the first surface and located in the second region. The decorative layer has a second sidewall adjacent to the first sidewall of the substrate, and a portion of the first surface disposed between the second sidewall and the first sidewall is defined as an outer border region. The protective layer is at least partially disposed in the outer border region of the first surface.

Abstract: A method for strengthening glass and a glass using the same are provided. The method for strengthening glass includes the following steps. Firstly, a glass substrate, which has a first surface and a second surface opposite to the first surface, is provided. Next, a barrier film is formed on at least one of the first surface and the second surface. Then, the glass substrate with the barrier film is immersed in a strengthening solution. The strengthening solution includes first ions, and the barrier film can limit the first ions in the quantity entering the glass substrate.

Abstract: A method for strengthening glass and a glass using the same are provided. The method for strengthening glass includes the following steps. Firstly, a glass substrate, which has a first surface and a second surface opposite to the first surface, is provided. Next, a barrier film is formed on at least one of the first surface and the second surface. Then, the glass substrate with the barrier film is immersed in a strengthening solution. The strengthening solution includes first ions, and the barrier film can limit the first ions in the quantity entering the glass substrate.

Abstract: A method for strengthening glass and a glass using the same are provided. The method for strengthening glass includes the following steps. Firstly, a glass substrate, which has a first surface and a second surface opposite to the first surface, is provided. Next, a barrier film is formed on at least one of the first surface and the second surface. Then, the glass substrate with the barrier film is immersed in a strengthening solution. The strengthening solution includes first ions, and the barrier film can limit the first ions in the quantity entering the glass substrate.