Abstract: A semiconductor device includes a substrate having fins and trenches in between the fins, a plurality of insulators, a first metal layer, an insulating layer, a second metal layer and an interlayer dielectric. The insulators are disposed within the trenches of the substrate. The first metal layer is disposed on the plurality of insulators and across the fins. The insulating layer is disposed on the first metal layer over the plurality of insulators and across the fins. The second metal layer is disposed on the insulating layer over the plurality of insulators and across the fins. The interlayer dielectric is disposed on the insulators and covering the first metal layer, the insulating layer and the second metal layer.

Abstract: A treatment method of wastewater containing high-concentration boron includes steps as follows: pouring wastewater containing high-concentration boron into a PH value adjusting tank; pouring an alkaline solution into the PH value adjusting tank; pouring the wastewater containing boron into a boron-removing electrocoagulation tank, and an electric conducting electrolyte being provided for performing an electrocoagulation procedure; discharging sludge generated by the electrocoagulation procedure into a boron-contained sludge dewatering tank; outputting the wastewater containing boron into a first absorbing tank provided with a first absorbing material to perform an absorbing and filtering procedure; outputting the wastewater containing boron into a second absorbing tank provided with a second absorbing material to perform another absorbing and filtering procedure; and outputting the wastewater containing boron into a filtering tank to perform another filtering procedure for outputting the wastewater containing