Abstract: In some embodiments, the present disclosure relates to an integrated chip structure. The integrated chip structure includes forming a first image sensor element within a first substrate and a second image sensor element within a second substrate. The first image sensor element is configured to generate electrical signals from electromagnetic radiation within a first range of wavelengths and the second image sensor element is configured to generate electrical signals from electromagnetic radiation within a second range of wavelengths. A plurality of deposition processes are performed to form a band-pass filter over the second substrate. The band-pass filter has a plurality of alternating layers of a first material having a first refractive index and a second material having a second refractive index that is less than the first refractive index. The first substrate is bonded to the band-pass filter.

Abstract: In some embodiments, an image sensor is provided. The image sensor includes a photodetector disposed in a semiconductor substrate. A wave guide filter having a substantially planar upper surface is disposed over the photodetector. The wave guide filter includes a light filter disposed in a light filter grid structure. The light filter includes a first material that is translucent and has a first refractive index. The light filter grid structure includes a second material that is translucent and has a second refractive index less than the first refractive index.

Abstract: A plurality of holes in a top surface of a silicon medium form a plurality of sub-meta lenses to result in multiple focal points rather than a single point (resulting from using a single meta lens). As a result, optical paths for incoming light are reduced as compared with a single optical path associated with a single meta lens, which in turn reduces angular response of incident photons. Thus, a pixel sensor including the plurality of sub-meta lenses experiences improved light focus and greater signal-to-noise ratio. Additionally, dimensions of the pixel sensor are reduced (particularly a height of the pixel sensor), which allows for greater miniaturization of an image sensor that includes the pixel sensor.

Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a substrate having an image sensor region arranged between sidewalls of the substrate that form one or more trenches. One or more dielectric materials are arranged along the sidewalls of the substrate that form the one or more trenches. A reflective region is disposed within the one or more trenches and laterally surrounded by the one or more dielectric materials. The reflective region includes a plurality of reflective portions that are arranged at different vertical positions within the reflective region and that have different reflective properties.

Abstract: Various embodiments of the present application are directed towards an image sensor including a wavelength tunable narrow band filter, as well as methods for forming the image sensor. In some embodiments, the image sensor includes a substrate, a first photodetector, a second photodetector, and a filter. The first and second photodetectors neighbor in the substrate. The filter overlies the first and second photodetectors and includes a first distributed Bragg reflector (DBR), a second DBR, and a first interlayer between the first and second DBRs. A thickness of the first interlayer has a first thickness value overlying the first photodetector and a second thickness value overlying the second photodetector. In some embodiments, the filter is limited to a single interlayer. In other embodiments the filter further includes a second interlayer defining columnar structures embedded in the first interlayer and having a different refractive index than the first interlayer.

Abstract: Semiconductor structures and methods are provided. An exemplary method includes depositing forming a first metal-insulator-metal (MIM) capacitor over a substrate and forming a second MIM capacitor over the first MIM capacitor. The forming of the first MIM capacitor includes forming a first conductor plate over a substrate, the first conductor plate comprising a first metal element, conformally depositing a first dielectric layer on the first conductor plate, the first dielectric layer comprising the first metal element, forming a first high-K dielectric layer on the first dielectric layer, conformally depositing a second dielectric layer on the first high-K dielectric layer, the second dielectric layer comprising a second metal element, and forming a second conductor plate over the second dielectric layer, the second conductor plate comprises the second metal element.

Abstract: The present disclosure provides an electrochemical measuring method. The method includes: providing a biochemical test chip including: an insulating substrate; an electrode unit, located on the insulating substrate and including a working electrode and a counter electrode; a first insulating septum, located on the electrode unit and having an opening at least partially exposing the electrode unit; a reactive layer, located at the opening and electrically connected to the electrode unit; and a second insulating septum, located on the first insulating septum, and reacting the reactive layer with a target analyte as a primary reaction. During the primary reaction, the counter electrode undergoes a self-redox reaction without interfering with the primary reaction, the self-redox reaction allows the counter electrode capable of receiving or releasing additional electrons, and a current density of the counter electrode is greater than a current density of the working electrode.

Abstract: Various embodiments of the present application are directed to a narrow band filter with high transmission and an image sensor comprising the narrow band filter. In some embodiments, the filter comprises a first distributed Bragg reflector (DBR), a second DBR, a defect layer between the first and second DBRs, and a plurality of columnar structures. The columnar structures extend through the defect layer and have a refractive index different than a refractive index of the defect layer. The first and second DBRs define a low transmission band, and the defect layer defines a high transmission band dividing the low transmission band. The columnar structures shift the high transmission band towards lower or higher wavelengths depending upon a refractive index of the columnar structures and a fill factor of the columnar structures.

Abstract: The present disclosure provides a biochemical test chip, including an insulating substrate, an electrode unit, a first insulating septum, a reactive layer and a second insulating septum. The electrode unit is located on the insulating substrate. The electrode unit includes a working electrode and a counter electrode. A current density of the counter electrode is greater than a current density of the working electrode. The first insulating septum is located on the electrode unit. The first insulating septum has an opening, which at least partially exposes the electrode unit. The reactive layer is located in the opening and is electrically connected to the electrode unit. The second insulating septum is located on the first insulating septum.

Abstract: A semiconductor structure includes an interconnect structure, a passivation structure, a first capacitor, and a contact feature. The interconnect structure is disposed over a semiconductor substrate. The passivation structure is disposed over the interconnect structure. The first capacitor is disposed within the passivation structure. The contact feature is disposed over the passivation structure, wherein the first capacitor is proximal to a corner of the contact feature. A method of manufacturing the semiconductor structure is also provided.

Abstract: The present disclosure relates to an integrated chip including a substrate and a pixel. The pixel includes a photodetector. The photodetector is in the substrate. The integrated chip further includes a first inner trench isolation structure and an outer trench isolation structure that extend into the substrate. The first inner trench isolation structure laterally surrounds the photodetector in a first closed loop. The outer trench isolation structure laterally surrounds the first inner trench isolation structure along a boundary of the pixel in a second closed loop and is laterally separated from the first inner trench isolation structure. Further, the integrated chip includes a scattering structure that is defined, at least in part, by the first inner trench isolation structure and that is configured to increase an angle at which radiation impinges on the outer trench isolation structure.

Abstract: A method includes following steps. First transistors are formed over a substrate. An interconnect structure is formed over the plurality of first transistors. A dielectric layer is formed over the interconnect structure. 2D semiconductor seeds are formed over the dielectric layer. The 2D semiconductor seeds are annealed. An epitaxy process is performed to laterally grow a plurality of 2D semiconductor films respectively from the plurality of 2D semiconductor seeds. Second transistors are formed on the plurality of 2D semiconductor films.

Abstract: The present disclosure provides a biochemical test chip, including an insulating substrate, an electrode unit, a first insulating septum, a reactive layer and a second insulating septum. The electrode unit is located on the insulating substrate. The electrode unit includes a working electrode and a counter electrode. A current density of the counter electrode is greater than a current density of the working electrode. The first insulating septum is located on the electrode unit. The first insulating septum has an opening, which at least partially exposes the electrode unit. The reactive layer is located in the opening and is electrically connected to the electrode unit. The second insulating septum is located on the first insulating septum.

Abstract: The present disclosure provides a biochemical test chip, including an electrode unit and a protective layer. The protective layer is electrically connected to the electrode unit. The protective layer is configured to oxidize the electrode unit after the electrode unit receives an electron or reduce the electrode unit after the electrode unit loses an electron. There is a potential difference (Ecell0) between the protecting layer and the electrode unit.

Abstract: The present disclosure provides a biochemical test chip, including an insulating substrate, an electrode unit, a first insulating septum, a reactive layer and a second insulating septum. The electrode unit is located on the insulating substrate. The electrode unit includes a working electrode and a counter electrode. A current density of the counter electrode is greater than a current density of the working electrode. The first insulating septum is located on the electrode unit. The first insulating septum has an opening, which at least partially exposes the electrode unit. The reactive layer is located in the opening and is electrically connected to the electrode unit. The second insulating septum is located on the first insulating septum.

Abstract: A dewaxing device includes a dewaxing system which includes a rinsing device and a storage device connected with the rinsing device via a circulation pipe, and a recycling system which includes a containing trough connected with the storage device and a recycling trough connected between the containing trough and the storage device. The recycling system further includes a rotating device, a condensing unit and a heating unit which cooperate to treat mixed solution with wax into pure chemical solvent in the containing trough. The rotating device is rotatably mounted above the containing trough with the bottom half thereof being dived into the mixed solution. The condensing unit and the heating unit are disposed at two opposite sides of the top half of the rotating device. The rotating device is rotated towards the condensing unit.

Abstract: A method of manufacturing a hydrogen storage device includes the steps: (1) mix metal powder, backbone binder and wetting agent to make a canister shell feedstock; (2) mix metal powder, salts, backbone binder and wetting agent to make a porous structure feedstock; (3) feed the canister shell feedstock in an injection molding machine to form a green part of canister shell; (4) feed the porous structure feedstock in the green part of canister shell to form a green part of porous structure integral with the green part of canister shell by injection molding; (5) dissolve the salts out of the green part of porous structure to form pores; (6) remove the wetting agent from the green parts of canister shell and porous structure; (7) remove the backbone binder from the green parts of canister shell and porous structure to form the hydrogen storage device.

Abstract: A dewaxing device includes a dewaxing system which includes a rinsing device and a storage device connected with the rinsing device via a circulation pipe, and a recycling system which includes a containing trough connected with the storage device and a recycling trough connected between the containing trough and the storage device. The recycling system further includes a rotating device, a condensing unit and a heating unit which cooperate to treat mixed solution with wax into pure chemical solvent in the containing trough. The rotating device is rotatably mounted above the containing trough with the bottom half thereof being dived into the mixed solution. The condensing unit and the heating unit are disposed at two opposite sides of the top half of the rotating device. The rotating device is rotated towards the condensing unit.

Abstract: A dewaxing device and a method of recycling chemical solvent used by the dewaxing device are shown. The dewaxing device includes a dewaxing system and a recycling system. The dewaxing system includes a rinsing device and a storage device connected with the rinsing device via a circulation pipe. The recycling system includes a cooling equipment connected with the storage device for cooling mixed solution with wax from the storage device to precipitate wax out of the mixed solution, a filter equipment connected with the cooling equipment for filtering out the precipitated wax, and a recycling trough connected between the filter equipment and the storage device for containing the filtered solution passing through the filter equipment and further conveying the filtered solution back into the storage device to be reused.

Abstract: A dewaxing device and a method of dewaxing using the dewaxing device are shown. The dewaxing device includes a dewaxing system including a rinsing device and a storage device, and a recycling system connected with the storage device. The storage device includes a first solvent trough and a second solvent trough of which each is connected with the rinsing device and is equipped with a heating equipment. When the first solvent trough is connected with the rinsing device, the second solvent trough is disconnected with the rinsing device; when the second solvent trough is connected with the rinsing device, the first solvent trough is disconnected with the rinsing device. So, the dewaxing device can provide two dewaxing processes and effectively reduce recycling frequency because the recycling process is done after soluble wax quantity of bromopropane solvent reaches the maximum value 16%. The production cost is accordingly reduced.