Patents by Inventor Cheng Yu Huang

Cheng Yu Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210320072
    Abstract: The present disclosure relates to a semiconductor device and a manufacturing method, and more particularly to a semiconductor interposer device. The semiconductor interposer device includes a substrate and a first metallization layer formed on the substrate. A first dielectric layer is formed on the first metallization layer and a second metallization layer is formed on the substrate. A first conducting line is formed in the first metallization layer and second and third conducting lines are formed in the second metallization layer. A metal-insulator-metal (MIM) capacitor is formed in the first dielectric layer and over the first conducting line.
    Type: Application
    Filed: June 23, 2021
    Publication date: October 14, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hui Yu LEE, Chin-Chou Liu, Cheng-Hung Yeh, Fong-Yuan Chang, Po-Hsiang Huang, Yi-Kan Cheng, Ka Fai Chang
  • Patent number: 11143355
    Abstract: A multitier folding stand is provided with a rectangular base (1) including two parallel toothed members (11), a transverse groove (12), two cavities (13), two detents (14), two rear bossed holes (15), and a rotatable disc (16); a pivotal platform (2); a bent support (3) pivotably secured to the platform (2); two aligned pivotal arms (4) pivotably secured to the bossed holes (15) respectively and including a lengthwise trough (43); two opposite pivotal support arms (5) including a main part (51), two pivots (52) at two ends of the main part (51) respectively, first and second bearings (53, 54) for securing the pivots (52) to the base (1) respectively, a sliding groove (55) in the main part (51), a first hole (56) through a first end of the sliding groove (55), and a sleeve (58) in the first hole (56); and two opposite pivotal legs (6).
    Type: Grant
    Filed: July 24, 2020
    Date of Patent: October 12, 2021
    Inventor: Cheng Yu Huang
  • Patent number: 11145728
    Abstract: A method includes forming a gate structure over a fin protruding above a substrate, forming a gate spacer layer on sidewalls of the gate structure, forming an etch stop layer on sidewalls of the gate spacer layer, replacing the gate structure with a gate stack, forming a source/drain contact adjacent the etch stop layer, recessing the gate stack to form a first recess, filling the first recess with a first dielectric material, recessing the source/drain contact and the etch stop layer to form a second recess, filling the second recess with a second dielectric material, recessing the second dielectric material and the gate spacer layer to form a third recess, and filling the third recess with a third dielectric material, wherein the composition of the third dielectric material is different from that of the first dielectric material and the second dielectric material.
    Type: Grant
    Filed: March 5, 2020
    Date of Patent: October 12, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Lin-Yu Huang, Li-Zhen Yu, Chia-Hao Chang, Cheng-Chi Chuang, Yu-Ming Lin, Chih-Hao Wang
  • Publication number: 20210313509
    Abstract: A memory device includes a substrate; an active area extending along a first direction on the substrate; a gate line traversing the active area and extending along a second direction that is not parallel to the first direction; a source doped region in the active area and on a first side of the gate line; a main source line extending along the first direction; a source line extension coupled to the main source line and extending along the second direction; a drain doped region in the active area and on a second side of the gate line that is opposite to the first side; and a data storage element electrically coupled to the drain doped region. The main source line is electrically connected to the source doped region via the source line extension.
    Type: Application
    Filed: April 19, 2020
    Publication date: October 7, 2021
    Inventors: Yi-Ting Wu, Yan-Jou Chen, Cheng-Tung Huang, Jen-Yu Wang, Po-Chun Yang, Yung-Ching Hsieh, Jian-Jhong Chen, Bo-Chang Li
  • Publication number: 20210313207
    Abstract: A wafer image capturing apparatus, including a loud/unload system, at least one imaging station and a conveying device, are provided. The loud/unload system contains a plurality of wafers. The at least one imaging includes a platform and an image capturing device. The conveying device includes a movable component for moving the wafer to a platform of at least one imaging station. An image capturing device is configured to capture an image of the wafer. A method for image capturing is also provided, including: operating a conveying device to pick a wafer from a load/unload system and move the wafer to at least one imaging station; and operating at least one image capturing device to capture an image from above or below the imaging station. Thus, the flexibility and efficiency of wafer image capturing can be improved.
    Type: Application
    Filed: March 31, 2021
    Publication date: October 7, 2021
    Inventors: Cheng-Tao TSAI, Chao-Yu HUANG, Te-Chun CHEN, Cheng-Yang HSIEH
  • Publication number: 20210314951
    Abstract: A wireless communication terminal including a wireless transceiver and a controller is provided. The wireless transceiver performs wireless transmission and reception to and from an AP. The controller is coupled to the wireless transceiver, and is operable to configure the wireless communication terminal to operate as a non-AP STA, and transmit a MU PPDU with a single RU spanning a partial bandwidth of the MU PPDU to the AP via the wireless transceiver. In particular, the partial bandwidth excludes a frequency band of a primary channel.
    Type: Application
    Filed: March 18, 2021
    Publication date: October 7, 2021
    Inventors: Cheng-Yi CHANG, Chao-Wen CHOU, Kun-Sheng HUANG, Fu-Yu TSAI, Hung-Tao HSIEH
  • Publication number: 20210305382
    Abstract: A semiconductor device includes a metal gate structure having sidewall spacers disposed on sidewalls of the metal gate structure. In some embodiments, a top surface of the metal gate structure is recessed with respect to a top surface of the sidewall spacers. The semiconductor device may further include a metal cap layer disposed over and in contact with the metal gate structure, where a first width of a bottom portion of the metal cap layer is greater than a second width of a top portion of the metal cap layer. In some embodiments, the semiconductor device may further include a dielectric material disposed on either side of the metal cap layer, where the sidewall spacers and a portion of the metal gate structure are disposed beneath the dielectric material.
    Type: Application
    Filed: September 30, 2020
    Publication date: September 30, 2021
    Inventors: Lin-Yu HUANG, Li-Zhen YU, Chia-Hao CHANG, Cheng-Chi CHUANG, Kuan-Lun CHENG, Chih-Hao WANG
  • Publication number: 20210305246
    Abstract: A semiconductor device with air spacers and air caps and a method of fabricating the same are disclosed. The semiconductor device includes a substrate and a fin structure disposed on the substrate. The fin structure includes a first fin portion and a second fin portion. The semiconductor device further includes a source/drain (S/D) region disposed on the first fin portion, a contact structure disposed on the S/D region, a gate structure disposed on the second fin portion, an air spacer disposed between a sidewall of the gate structure and the contact structure, a cap seal disposed on the gate structure, and an air cap disposed between a top surface of the gate structure and the cap seal.
    Type: Application
    Filed: August 28, 2020
    Publication date: September 30, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Lin-Yu HUANG, Chiao-Hao Chang, Cheng-Chi Chuang, Chih-Hao Wang, Ching-Wei Tsai, Kuan-Lun Cheng
  • Patent number: 11127703
    Abstract: Semiconductor devices are provided. The semiconductor device includes a first dielectric layer, a bump, an etching stop layer and a spacer. The first dielectric layer is disposed over and exposes a conductive structure. The bump is partially disposed in the first dielectric layer to electrically connect the conductive structure. The etching stop layer is disposed over the first dielectric layer aside the bump. The spacer surrounds the bump and disposed between the etching stop layer and the bump.
    Type: Grant
    Filed: April 2, 2019
    Date of Patent: September 21, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chin-Yu Ku, Cheng-Lung Yang, Chen-Shien Chen, Hon-Lin Huang, Chao-Yi Wang, Ching-Hui Chen, Chien-Hung Kuo
  • Publication number: 20210287397
    Abstract: An image calibration method for imaging system is provided, including: specifying a detection area located in an image capture scope and the detection area having a unit to be tested; capturing a detection image respectively when the detection area is located in at least two locations within the image capture scope; combining the plurality of detection images and calculating to obtain a calibration figure; and applying the calibration figure to a captured image to complete the calibration. In this way, the calibration figure that adapt to the luminescent type and size of the unit to be tested can be obtained.
    Type: Application
    Filed: November 9, 2020
    Publication date: September 16, 2021
    Inventors: Chin-Yu LIU, Cheng-En JIANG, Tung-Lin TANG, Chi-Yuan LIN, Hung Chun LO, Chao-Yu HUANG, Cheng-Tao TSAI
  • Publication number: 20210280575
    Abstract: A semiconductor device includes a FinFET component, a plurality of patterned dummy semiconductor fins arranged aside a plurality of fins of the FinFET component, an isolation structure formed on the patterned dummy semiconductor fins, and a tuning component formed on the patterned dummy semiconductor fins and electrically connected to the FinFET component. A height of the patterned dummy semiconductor fins is shorter than that of the fins of the FinFET component.
    Type: Application
    Filed: May 21, 2021
    Publication date: September 9, 2021
    Inventors: Cheng-Chien Huang, Chi-Wen Liu, Horng-Huei Tseng, Tsung-Yu Chiang
  • Publication number: 20210273062
    Abstract: A method includes providing a structure having a substrate, a gate, a gate spacer, a dielectric gate cap, a source/drain (S/D) feature, a contact etch stop layer (CESL) covering a sidewall of the gate spacer and a top surface of the S/D feature, and an inter-level dielectric (ILD) layer. The method includes etching a contact hole through the ILD layer and through a portion of the CESL, the contact hole exposing the CESL covering the sidewalls of the gate spacer and exposing a top portion of the S/D feature. The method includes forming a silicide feature on the S/D feature and selectively depositing an inhibitor on the silicide feature. The inhibitor is not deposited on surfaces of the CESL other than at a corner area where the CESL and the silicide feature meet.
    Type: Application
    Filed: May 22, 2020
    Publication date: September 2, 2021
    Inventors: Lin-Yu Huang, Li-Zhen Yu, Chia-Hao Chang, Cheng-Chi Chuang, Yu-Ming Lin, Chih-Hao Wang
  • Publication number: 20210265408
    Abstract: Various embodiments of the present application are directed to a narrow band filter with high transmission and an image sensor comprising the narrow band filter. In some embodiments, the filter comprises a first distributed Bragg reflector (DBR), a second DBR, a defect layer between the first and second DBRs, and a plurality of columnar structures. The columnar structures extend through the defect layer and have a refractive index different than a refractive index of the defect layer. The first and second DBRs define a low transmission band, and the defect layer defines a high transmission band dividing the low transmission band. The columnar structures shift the high transmission band towards lower or higher wavelengths depending upon a refractive index of the columnar structures and a fill factor of the columnar structures.
    Type: Application
    Filed: April 21, 2021
    Publication date: August 26, 2021
    Inventors: Cheng Yu Huang, Chun-Hao Chuang, Chien-Hsien Tseng, Kazuaki Hashimoto, Keng-Yu Chou, Wei-Chieh Chiang, Wen-Hau Wu
  • Patent number: 11089866
    Abstract: A folding stand is provided with a panel (1) including two cavities (11) adjacent to two sides of a bottom respectively, two wells (12) in front and rear ends of the cavity (11) respectively; and two legs (2) each including a short part (21), an elongated part (22) formed with the short part (11), a recess (23) between the short part (21) and the elongated part (22), two pivots (24) extending forwardly and rearward from the short part (21) respectively, the pivots (24) being rotatably disposed in the wells (12) respectively, and two mounts (25) put on the pivots (24) and releasably secured to the cavities (11) respectively. The leg (2) can be retracted into the cavity (11) or extended out of the cavity (11) by pivoting with respect to the wells (12).
    Type: Grant
    Filed: August 28, 2019
    Date of Patent: August 17, 2021
    Inventor: Cheng Yu Huang
  • Publication number: 20210183922
    Abstract: Various embodiments of the present disclosure are directed towards an integrated chip (IC). The IC comprises a first phase detection autofocus (PDAF) photodetector and a second PDAF photodetector in a substrate. A first electromagnetic radiation (EMR) diffuser is disposed along a back-side of the substrate and within a perimeter of the first PDAF photodetector. The first EMR diffuser is spaced a first distance from a first side of the first PDAF photodetector and a second distance less than the first distance from a second side of the first PDAF photodetector. A second EMR diffuser is disposed along the back-side of the substrate and within a perimeter of the second PDAF photodetector. The second EMR diffuser is spaced a third distance from a first side of the second PDAF photodetector and a fourth distance less than the third distance from a second side of the second PDAF photodetector.
    Type: Application
    Filed: September 14, 2020
    Publication date: June 17, 2021
    Inventors: Keng-Yu Chou, Chun-Hao Chuang, Kazuaki Hashimoto, Wei-Chieh Chiang, Cheng Yu Huang, Wen-Hau Wu, Chih-Kung Chang
  • Patent number: 11013317
    Abstract: A folding stand is provided with a rectangular base (1) including two parallel sets of top slots (11), two bottom cavities (12), and aside hole (15); a rectangular panel (2) hingedly secured to a front end of a top of the base (1) and including two sets of two parallel grooves (21), two spacers (22) moveably disposed in the grooves (21) of different sets or in the side hole (15), and a front, pivotal ledge (23); a support arm (3) having two ends pivotably secured to a bottom of the panel (2) and selectively disposed in the slots (11) of different sets; two aligned extension arms (4) each having one end pivotably secured to one of two rear corners of the base (1), the extension arm (4) including a lengthwise trough (41); and two legs (5) pivotably disposed in the cavities (12) respectively.
    Type: Grant
    Filed: August 28, 2019
    Date of Patent: May 25, 2021
    Inventor: Cheng Yu Huang
  • Patent number: 10991739
    Abstract: Various embodiments of the present application are directed to a narrow band filter with high transmission and an image sensor comprising the narrow band filter. In some embodiments, the filter comprises a first distributed Bragg reflector (DBR), a second DBR, a defect layer between the first and second DBRs, and a plurality of columnar structures. The columnar structures extend through the defect layer and have a refractive index different than a refractive index of the defect layer. The first and second DBRs define a low transmission band, and the defect layer defines a high transmission band dividing the low transmission band. The columnar structures shift the high transmission band towards lower or higher wavelengths depending upon a refractive index of the columnar structures and a fill factor of the columnar structures.
    Type: Grant
    Filed: April 1, 2020
    Date of Patent: April 27, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Cheng Yu Huang, Chun-Hao Chuang, Chien-Hsien Tseng, Kazuaki Hashimoto, Keng-Yu Chou, Wei-Chieh Chiang, Wen-Hau Wu
  • Patent number: 10991740
    Abstract: Various embodiments of the present application are directed to a narrow band filter with high transmission and an image sensor comprising the narrow band filter. In some embodiments, the filter comprises a first distributed Bragg reflector (DBR), a second DBR, a defect layer between the first and second DBRs, and a plurality of columnar structures. The columnar structures extend through the defect layer and have a refractive index different than a refractive index of the defect layer. The first and second DBRs define a low transmission band, and the defect layer defines a high transmission band dividing the low transmission band. The columnar structures shift the high transmission band towards lower or higher wavelengths depending upon a refractive index of the columnar structures and a fill factor of the columnar structures.
    Type: Grant
    Filed: April 1, 2020
    Date of Patent: April 27, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Cheng Yu Huang, Chun-Hao Chuang, Chien-Hsien Tseng, Kazuaki Hashimoto, Keng-Yu Chou, Wei-Chieh Chiang, Wen-Hau Wu
  • Patent number: 10952340
    Abstract: A stand includes a base including a seat, a cover having a front groove, and a PCB in the seat; a stem extending from the base and including a rear plate having a trough, a receptacle having LEDs, a front transparent covering, a tubular member on top of the rear plate, and a sliding groove in the rear plate; a holder on top of the stem and including upper and lower slides, the upper and lower slides being slidable each other and through the tubular member; and an attachment mechanism including an insert releasably secured to the seat, a guide member extending upward from the insert into the sliding groove, a handle secured to the guide member through the lengthwise trough, and two biasing members each having two ends secured to the guide member and urging against the rear plate respectively. Alternatively, the slides are replaced by pivotal supports.
    Type: Grant
    Filed: May 1, 2020
    Date of Patent: March 16, 2021
    Inventor: Cheng Yu Huang
  • Publication number: 20210062965
    Abstract: A folding stand is provided with a panel (1) including two cavities (11) adjacent to two sides of a bottom respectively, two wells (12) in front and rear ends of the cavity (11) respectively; and two legs (2) each including a short part (21), an elongated part (22) formed with the short part (11), a recess (23) between the short part (21) and the elongated part (22), two pivots (24) extending forwardly and rearward from the short part (21) respectively, the pivots (24) being rotatably disposed in the wells (12) respectively, and two mounts (25) put on the pivots (24) and releasably secured to the cavities (11) respectively. The leg (2) can be retracted into the cavity (11) or extended out of the cavity (11) by pivoting with respect to the wells (12).
    Type: Application
    Filed: August 28, 2019
    Publication date: March 4, 2021
    Inventor: Cheng Yu Huang