Abstract: A method of performing automatic tuning on a deep learning model includes: utilizing an instruction-based learned cost model to estimate a first type of operational performance metrics based on a tuned configuration of layer fusion and tensor tiling; utilizing statistical data gathered during a compilation process of the deep learning model to determine a second type of operational performance metrics based on the tuned configuration of layer fusion and tensor tiling; performing an auto-tuning process to obtain a plurality of optimal configurations based on the first type of operational performance metrics and the second type of operational performance metrics; and configure the deep learning model according to one of the plurality of optimal configurations.

Abstract: Semiconductor device structures having gate structures with tunable threshold voltages are provided. Various geometries of device structure can be varied to tune the threshold voltages. In some examples, distances from tops of fins to tops of gate structures can be varied to tune threshold voltages. In some examples, distances from outermost sidewalls of gate structures to respective nearest sidewalls of nearest fins to the respective outermost sidewalls (which respective gate structure overlies the nearest fin) can be varied to tune threshold voltages.

Abstract: A plasma-assisted annealing system includes a high temperature furnace, a plasma-induced dissociator and a connecting duct. The plasma-induced dissociator is provided to dissociate a working gas and exhaust the dissociated working gas from its working gas outlet. Both ends of the connecting duct are connected to the working gas outlet of the plasma-induced dissociator and a gas inlet of the high temperature furnace, respectively. The working gas dissociated in the plasma-induced dissociator is introduced into the high temperature furnace via the connecting duct.

Abstract: A method of forming a semiconductor device includes forming a first transistor and a second transistor on a substrate. The first transistor includes a first gate structure, and the second transistor includes a second gate structure. The first gate structure includes a first high-k layer, a first work function layer, an overlying work function layer, and a first capping layer sequentially formed on the substrate. The second gate structure comprising a second high-k layer, a second work function layer, and a second capping layer sequentially formed on the substrate. The first capping layer and the second capping layer comprise materials having higher resistant to oxygen or fluorine than materials of the second work function layer and the overlying work function layer.

Abstract: A passivated contact solar cell includes a silicon substrate and a back passivation assembly which includes a tunnel oxide layer, an N-type doped polysilicon film and a cover layer. The tunnel oxide layer is formed on the silicon substrate, the N-type doped polysilicon film is formed on the tunnel oxide layer by PECVD and has a thickness between 30 nm and 100 nm, the cover layer is formed on the N-type doped polysilicon film. The N-type doped polysilicon film formed by PECVD allows the tunnel oxide layer to retain fine passivation ability so as to enhance conversion efficiency of the passivated contact solar cell.

Abstract: A biological sorting apparatus is disclosed, which includes a light-induced dielectrophoretic chip, a supporting platform, an injecting unit and a projection module. The light-induced dielectrophoretic chip is configured to generate an internal electric field to perform sorting on a fluid including first microparticles and second microparticles. The supporting platform is utilized to support the light-induced dielectrophoretic chip thereon and has an opening. The injecting unit is configured to inject the fluid into the light-induced dielectrophoretic chip. The projection module is disposed below the supporting platform and is configured to project a light pattern onto a projection area of the light-induced dielectrophoretic chip through the opening of the supporting platform, such that the light-induced dielectrophoretic chip produces a light-induced effect to change the internal electric field, thereby sorting out the first microparticles and the second microparticles.

Abstract: A light source module for microparticles sorting performed in a light-induced dielectrophoresis chip is provided, which includes a light emitting element, a control unit and a light converting unit. The light emitting element is configured to generate and emit light. The control unit is configured to generate a driving signal based on image data. The Light converting unit is coupled to the control unit, and is configured to convert the light into a light pattern based on the driving signal. A luminous exitance of the light converting unit is between 9×104 lux and 1.2×105 lux.

Abstract: A light induced dielectrophoresis (LIDEP) includes a LIDEP chip, a patterned light source, and an opaque cartridge. The LIDEP chip includes a first electrode layer, a second electrode layer, a semiconductor layer, and a flow channel layer. The flow channel layer defines a first channel, a second channel and a third channel intersected at a confluence. The first channel is configured to guide a liquid. The flow channel layer further defines a projection region including the confluence. The patterned light source is configured to project a patterned light on the projection region for guiding the first micro-particles and the second micro-particles located within the confluence to move toward the second channel and the third channel, respectively. The opaque cartridge covers the LIDEP chip and has an opening. The vertical projection of the opening overlaps the projection region.

Abstract: A light induced dielectrophoresis (LIDEP) device is configured to perform a sorting process on a liquid including plural first micro-particles and plural second micro-particles. The LIDEP device includes a LIDEP chip and an opaque cartridge. The LIDEP chip includes a first electrode layer, a second electrode layer, a semiconductor layer, and a flow channel layer. The flow channel layer defines a first channel, a second channel and a third channel intersected at a confluence. The first channel is configured to guide the liquid. The flow channel layer further defines a projection region including the confluence. A patterned light source is projected on the projection region, thereby guiding the first micro-particles and the second micro-particles located within the confluence to move toward the second channel and the third channel, respectively. The opaque cartridge covers the LIDEP chip and has an opening. The vertical projection of the opening overlaps the projection region.

Abstract: A light source module for microparticles sorting performed in a light-induced dielectrophoresis chip is provided, which includes a light emitting element, a control unit and a light converting unit. The light emitting element is configured to generate and emit light. The control unit is configured to generate a driving signal based on image data. The Light converting unit is coupled to the control unit, and is configured to convert the light into a light pattern based on the driving signal. A luminous exitance of the light converting unit is between 9×104 lux and 1.2 ×105 lux.

Abstract: A biological sorting apparatus is disclosed, which includes a light-induced dielectrophoretic chip, a supporting platform, an injecting unit and a projection module. The light-induced dielectrophoretic chip is configured to generate an internal electric field to perform sorting on a fluid including first microparticles and second micropartides. The supporting platform is utilized to support the light-induced dielectrophoretic chip thereon and has an opening. The injecting unit is configured to inject the fluid into the light-induced dielectrophoretic chip. The projection module is disposed below the supporting platform and is configured to project a light pattern onto a projection area of the light-induced dielectrophoretic chip through the opening of the supporting platform, such that the light-induced dielectrophoretic chip produces a light-induced effect to change the internal electric field, thereby sorting out the first microparticles and the second microparticles.

Abstract: An extendable table includes a frame and a fixed board mounted on frame. The frame has two extension tubes arranged in parallel. The extension tube has an outer tube receiving two inner tubes therein. A gear wheel is provided on the outer tube and a gear rack is provided on each of the two inner tubes for engaging with the gear wheel, so that the two inner tubes move synchronously. The inner tube has an outer end thereof provided with a moving component. Two movable boards each have one side connected to the moving component and an opposite end laid on the fixed board. The movable boards may be drawn together to form a small tabletop or pulled apart to form, together with the fixed board, an extended tabletop. The inner tubes each have a lifting member that lifts the movable board for easy expanding/retracting operation.

Abstract: A microstrip antenna structure is provided, which includes a substrate, a ring microstrip line and a signal transmission port. The substrate has opposite first and second surfaces. The ring microstrip line is disposed on the first surface of the substrate. The ring microstrip line has a short coupling gap ranged between 0.004?g and 0.06?g for forming a radiation bandwidth with high selectivity, where ?g represents a guided wavelength of an electromagnetic wave in the ring microstrip line corresponding to a center frequency of the radiation bandwidth. The signal transmission port is disposed on the second surface of the substrate. The signal transmission port penetrates through the substrate and is electrically connected to the ring microstrip line.

Abstract: A coplanar waveguide structure is provided, which includes a transparent substrate, a center conductor, a first ground conductor and a second ground conductor. The center conductor is disposed on the transparent substrate. The center conductor has a first light transmissive area. The first light transmissive area is greater than 80% of the area of the center conductor. The first ground conductor is disposed on the transparent substrate and opposite to a side of the center conductor. The first ground conductor has a second light transmissive area. The second light transmissive area is greater than 83% of the area of the first ground conductor. The second ground conductor is disposed on the transparent substrate and opposite to another side of the center conductor. The second ground conductor has a third light transmissive area. The third light transmissive area is greater than 83% of the area of the second ground conductor.