Abstract: A semiconductor structure is provided. A first semiconductor device includes a first conductive layer formed over a first substrate; a first etching stop layer formed over the first conductive layer, and the first etching stop layer is in direct contact with the first conductive layer. A first bonding layer is formed over the first etching stop layer, and a first bonding via is formed through the first bonding layer and the first etching stop layer. The semiconductor structure includes a second semiconductor device. The second semiconductor device includes a second bonding layer formed over the second etching stop layer and a second bonding via formed through the second bonding layer and a second etching stop layer. A bonding structure between the first substrate and the second substrate, and the bonding structure includes the first bonding via bonded to the second bonding via.

Abstract: An image sensor device is provided. The image sensor device includes a semiconductor substrate having a first light-sensing region and a second light-sensing region adjacent to the first light-sensing region. The image sensor device includes an isolation structure in the semiconductor substrate and surrounding the first light-sensing region and the second light-sensing region. The image sensor device includes a reflective grid over the isolation structure and surrounding the first light-sensing region and the second light-sensing region. The image sensor device includes a first color filter over the first light-sensing region and extending into a first trench of the reflective grid. The image sensor device includes a second color filter over the second light-sensing region and extending into the first trench to be in direct contact with the first color filter in the first trench.

Abstract: A semiconductor device includes a first semiconductor chip comprising a first metallic structure and a second semiconductor chip comprising a second metallic structure. The second semiconductor chip is bonded with the first semiconductor chip by a first conductive plug. A second conductive plug extends from the first metallic structure and into a substrate of the first semiconductor chip. The first conductive plug connects the first metallic structure and the second metallic structure, wherein a conductive liner is along a sidewall of the first conductive plug or the second conductive plug.

Abstract: A semiconductor device includes a first semiconductor chip comprising a first metallic structure and a second semiconductor chip comprising a second metallic structure. The second semiconductor chip is bonded with the first semiconductor chip by a first conductive plug. A second conductive plug extends from the first metallic structure and into a substrate of the first semiconductor chip. The first conductive plug connects the first metallic structure and the second metallic structure, wherein a conductive liner is along a sidewall of the first conductive plug or the second conductive plug.