Patents by Inventor Cheng-Yuan Michael Wang
Cheng-Yuan Michael Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7554844Abstract: Techniques are used to store information in a medium such as the memory cells of an integrated circuit, and also retrieval of information from the medium. The integrated circuit includes nonvolatile memory cells (416) capable of multilevel or analog voltage level storage. The integrated circuit may store or record information in analog or digital form, or both. Information is stored in and retrieved from the integrated circuit using a user-selected sampling frequency. The user's selection of the sampling frequency is stored within the integrated circuit.Type: GrantFiled: October 22, 2007Date of Patent: June 30, 2009Assignee: SanDisk CorporationInventors: Carl W. Werner, Andreas M. Haeberli, Leon Sea Jiunn Wong, Cheng-Yuan Michael Wang, Hock C. So, Sau C. Wong
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Patent number: 7298670Abstract: Techniques are used to store information in a medium such as the memory cells of an integrated circuit, and also retrieval of information from the medium. The integrated circuit includes nonvolatile memory cells (416) capable of multilevel or analog voltage level storage. The integrated circuit may store or record information in analog or digital form, or both. Information is stored in and retrieved from the integrated circuit using a user-selected sampling frequency. The user's selection of the sampling frequency is stored within the integrated circuit.Type: GrantFiled: July 27, 2006Date of Patent: November 20, 2007Assignee: SanDisk CorporationInventors: Carl W. Werner, Andreas M. Haeberli, Leon Sea Jiunn Wong, Cheng-Yuan Michael Wang, Hock C. So, Sau C. Wong
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Patent number: 7106632Abstract: Techniques are used to store information in a medium such as the memory cells of an integrated circuit, and also retrieval of information from the medium. The integrated circuit includes nonvolatile memory cells (416) capable of multilevel or analog voltage level storage. The integrated circuit may store or record information in analog or digital form, or both. Information is stored in and retrieved from the integrated circuit using a user-selected sampling frequency. The user's selection of the sampling frequency is stored within the integrated circuit.Type: GrantFiled: February 5, 2003Date of Patent: September 12, 2006Assignee: SanDisk CorporationInventors: Carl W. Werner, Andreas M. Haeberli, Leon Sea Jiunn Wong, Cheng-Yuan Michael Wang, Hock C. So, Sau C. Wong
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Patent number: 6760262Abstract: An integrated circuit detects the voltage level of the supply voltage to the integrated circuit. Circuity on the integrated circuit including the charge pump circuity adjusts to operate more effectively or efficiently at the voltage level of the supply voltage.Type: GrantFiled: March 4, 2003Date of Patent: July 6, 2004Assignee: SanDisk CorporationInventors: Andreas M. Haeberli, Sau C. Wong, Hock C. So, Carl W. Werner, Cheng-Yuan Michael Wang, Leon Sea Jiunn Wong
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Publication number: 20030202389Abstract: Techniques are used to store information in a medium such as the memory cells of an integrated circuit, and also retrieval of information from the medium. The integrated circuit includes nonvolatile memory cells (416) capable of multilevel or analog voltage level storage. The integrated circuit may store or record information in analog or digital form, or both. Information is stored in and retrieved from the integrated circuit using a user-selected sampling frequency. The user's selection of the sampling frequency is stored within the integrated circuit.Type: ApplicationFiled: February 5, 2003Publication date: October 30, 2003Applicant: SanDisk Corporation, a Delaware CorporationInventors: Carl W. Werner, Andreas M. Haeberli, Leon Sea Jiunn Wong, Cheng-Yuan Michael Wang, Hock C. So, Sau C. Wong
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Publication number: 20030161171Abstract: An integrated circuit detects the voltage level of the supply voltage to the integrated circuit. Circuity on the integrated circuit including the charge pump circuity adjusts to operate more effectively or efficiently at the voltage level of the supply voltage.Type: ApplicationFiled: March 4, 2003Publication date: August 28, 2003Applicant: INVOX TECHNOLOGY, a California CorporationInventors: Andreas M. Haeberli, Sau C. Wong, Hock C. So, Carl W. Werner, Cheng-Yuan Michael Wang, Leon Sea Jiunn Wong
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Patent number: 6556465Abstract: An integrated circuit detects the voltage level of the supply voltage to the integrated circuit. Circuity on the integrated circuit including the charge pump circuity adjusts to operate more effectively or efficiently at the voltage level of the supply voltage.Type: GrantFiled: March 27, 2002Date of Patent: April 29, 2003Assignee: SanDisk CorporationInventors: Andreas M. Haeberli, Sau C. Wong, Hock C. So, Carl W. Werner, Cheng-Yuan Michael Wang, Leon Sea Jiunn Wong
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Patent number: 6549456Abstract: Techniques are used to store information in a medium such as the memory cells of an integrated circuit, and also retrieval of information from the medium. The integrated circuit includes nonvolatile memory cells (416) capable of multilevel or analog voltage level storage. The integrated circuit may store or record information in analog or digital form, or both. Information is stored in and retrieved from the integrated circuit using a user-selected sampling frequency. The user's selection of the sampling frequency is stored within the integrated circuit.Type: GrantFiled: June 29, 1999Date of Patent: April 15, 2003Assignee: SanDisk CorporationInventors: Carl W. Werner, Andreas M. Haeberli, Leon Sea Jiunn Wong, Cheng-Yuan Michael Wang, Hock C. So, Sau C. Wong
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Publication number: 20020149987Abstract: An integrated circuit detects the voltage level of the supply voltage to the integrated circuit. Circuity on the integrated circuit including the charge pump circuity adjusts to operate more effectively or efficiently at the voltage level of the supply voltage.Type: ApplicationFiled: March 27, 2002Publication date: October 17, 2002Applicant: INVOX TECHNOLOGYInventors: Andreas M. Haeberli, Sau C. Wong, Hock C. So, Carl W. Werner, Cheng-Yuan Michael Wang, Leon Sea Jiunn Wong
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Publication number: 20020136044Abstract: Techniques are used to store information in a medium such as the memory cells of an integrated circuit, and also retrieval of information from the medium. The integrated circuit includes nonvolatile memory cells (416) capable of multilevel or analog voltage level storage. The integrated circuit may store or record information in analog or digital form, or both. Information is stored in and retrieved from the integrated circuit using a user-selected sampling frequency. The user's selection of the sampling frequency is stored within the integrated circuit.Type: ApplicationFiled: June 29, 1999Publication date: September 26, 2002Inventors: CARL W. WERNER, ANDREAS M. HAEBERLI, LEON SEA JIUNN WONG, CHENG-YUAN MICHAEL WANG, HOCK C. SO, SAU C. WONG
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Patent number: 6370075Abstract: An integrated circuit detects the voltage level of the supply voltage to the integrated circuit. Circuity on the integrated circuit including the charge pump circuity adjusts to operate more effectively or efficiently at the voltage level of the supply voltage.Type: GrantFiled: June 29, 1999Date of Patent: April 9, 2002Assignee: SanDisk CorporationInventors: Andreas M. Haeberli, Sau C. Wong, Hock C. So, Carl W. Werner, Cheng-Yuan Michael Wang, Leon Sea Jiunn Wong
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Patent number: 6345000Abstract: A non-volatile Flash memory simultaneously performs an erase operation and a write or read operation in the same array of memory cells. The memory has a row based sector architecture, i.e., sectors that contain one or more complete rows of memory cells. During an erase operation, an erase voltage applied to the source lines for one or more rows corresponding to a sector does not affect write or read operations being performed in other sectors, i.e., other rows. Similarly, voltages applied to row lines for access to a memory cell have no effect on the erase operation being performed in another sector. A column line voltage applied for access to a memory cell has little affect on the erase operation. The memory can implement a look-ahead erase for a continuous reading or writing operation.Type: GrantFiled: November 25, 1998Date of Patent: February 5, 2002Assignee: SanDisk CorporationInventors: Sau C. Wong, Hock C. So, Cheng-Yuan Michael Wang, Roger Ying Kuen Lo
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Patent number: 6208542Abstract: An integrated circuit stores analog or digital information, or both, in memory cells (416). The memory cells provide analog or multilevel storage. Analog information is provided through an analog signal input (405), and digital information is provided through a digital signal input (407). A scheme for storing digital information is consistent with the scheme used to store analog information. Data is retrieved from the memory cells, and output to the analog or digital signal output (454, 463) depending on the type of data. A digital reference generator reference generator (425) generates various analog equivalent voltages for the digital signal input.Type: GrantFiled: June 2, 1999Date of Patent: March 27, 2001Assignee: SanDisk CorporationInventors: Cheng-Yuan Michael Wang, Andreas M. Haeberli, Carl W. Werner, Sau C. Wong, Hock C. So, Leon Sea Jiunn Wong
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Patent number: 6185119Abstract: An integrated circuit memory is capable of storing analog information without the need for A/D conversion. Samples of a analog signal input are stored in nonvolatile memory cells. The integrated circuit is also capable of storing digital information in digital form. The sampling rate at which the analog signal input is sampled is user selectable. An internal signal path of the integrated circuit memory is differential, which enhances the precision with which the analog signal is stored in the memory cells.Type: GrantFiled: June 29, 1999Date of Patent: February 6, 2001Assignee: SanDisk CorporationInventors: Andreas M. Haeberli, Carl W. Werner, Hock C. So, Sau C. Wong, Cheng-Yuan Michael Wang, Leon Sea Jiunn Wong
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Patent number: 6184726Abstract: Level shifter circuits are used to configure analog or multilevel memory cells. A level shifter circuit generates an output voltage that is above the input voltage by an offset voltage value. The magnitude of this offset voltage or the relationship between the input and output voltages of the level shifter is adjustable or programmably selectable. Adjustments can be made after the integrated circuits is fabricated and packaged. Adjustments are made by configuring bits of data in the integrated circuit to indicate the offset voltage or other parameters. These configuration bits are implemented using latches, flip-flops, registers, memory cells, or other storage circuits.Type: GrantFiled: June 29, 1999Date of Patent: February 6, 2001Assignee: SanDisk CorporationInventors: Andreas M. Haeberli, Carl W. Werner, Cheng-Yuan Michael Wang, Hock C. So, Leon Sea Jiunn Wong, Sau C. Wong
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Patent number: 6034541Abstract: A programmable interconnect circuit includes multiple input/output cells, each corresponding to an input/output pin, and a global routing resource for routing signals received at the input pins to be output as output signals at output and bi-directional pins. The signals routed in the global routing resource can include multiplexer control signals, clock signals and output enable signals for controlling dynamic signal switching. The global routing resource allows high static routability.Type: GrantFiled: April 7, 1997Date of Patent: March 7, 2000Assignee: Lattice Semiconductor CorporationInventors: Stanley J. Kopec, Jr., Cheng-Yuan Michael Wang, Jerome Connelly Farmer, Cyrus Y. Tsui