Patents by Inventor Cheng-Yun Hsiao

Cheng-Yun Hsiao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240162051
    Abstract: Some implementations described herein include systems and techniques for fabricating a stacked die product. The systems and techniques include using a supporting fill mixture that includes a combination of types of composite particulates in a lateral gap region of a stack of semiconductor substrates and along a perimeter region of the stack of semiconductor substrates. One type of composite particulate included in the combination may be a relatively smaller size and include a smooth surface, allowing the composite particulate to ingress deep into the lateral gap region. Properties of the supporting fill mixture including the combination of types of composite particulates may control thermally induced stresses during downstream manufacturing to reduce a likelihood of defects in the supporting fill mixture and/or the stack of semiconductor substrates.
    Type: Application
    Filed: April 27, 2023
    Publication date: May 16, 2024
    Inventors: Kuo-Ming WU, Hau-Yi HSIAO, Kai-Yun YANG, Che Wei YANG, Sheng-Chau CHEN, Chung-Yi YU, Cheng-Yuan TSAI
  • Publication number: 20170016845
    Abstract: A test strip includes a substrate, a spacer layer having a notch, a reagent layer, a support layer, and a cover layer having a covering portion covering the notch and a channel portion extending rearward from the covering portion corresponding to a rear end of the notch. The substrate is attached under the spacer layer and has a reaction region exposed from the notch. The support layer is located at two sides of the notch and connected to the cover layer and the spacer layer to make the channel portion away from the spacer layer at a vertical distance. The support layer, the covering portion, the notch, and the substrate form a reaction chamber for allowing an analyte solution to react with the reagent layer coated on the reaction region, and the support layer, the channel portion, and the spacer layer forms a channel for exhausting air.
    Type: Application
    Filed: July 4, 2016
    Publication date: January 19, 2017
    Inventors: Cheng-Che Lee, Han-Ching Tsai, Cheng-Yun Hsiao, Jen-Hao Liu