Abstract: The grating layer of a surface emitting laser is divided into a first grating region and a second grating region along a horizontal direction. The second grating region is located at a middle area of the grating layer, while the first grating region is located in an outer peripheral area of the grating layer. Each of the first and second grating regions comprises a plurality of micro-grating structures. The grating period of the micro-grating structures in the first grating region is in accordance with the following mathematical formula: ? = m ? ? 2 * n eff ; in addition, the grating period of the micro-grating structures in the second grating region is in accordance with the following mathematical formula: ? = o ? ? 2 * n eff . Wherein, ? is the length of grating period, ? is the wavelength of the laser light, neff is the equivalent refractive index of semiconductor waveguide, m=1, and o=2.

Abstract: The grating layer of a surface emitting laser is divided into a first grating region and a second grating region along a horizontal direction. The second grating region is located at a middle area of the grating layer, while the first grating region is located in an outer peripheral area of the grating layer. Each of the first and second grating regions comprises a plurality of micro-grating structures. The grating period of the micro-grating structures in the first grating region is in accordance with the following mathematical formula: ? = m ? ? 2 * n eff ; in addition, the grating period of the micro-grating structures in the second grating region is in accordance with the following mathematical formula: ? = o ? ? 2 * n eff . Wherein, ? is the length of grating period, ? is the wavelength of the laser light, neff is the equivalent refractive index of semiconductor waveguide, m=1, and o=2.

Abstract: The grating layer of a surface emitting laser is divided into a first grating region and a second grating region along a horizontal direction. The second grating region is located at a middle area of the grating layer, while the first grating region is located in an outer peripheral area of the grating layer. Each of the first and second grating regions comprises a plurality of micro-grating structures. The grating period of the micro-grating structures in the first grating region is in accordance with the following mathematical formula: ? = m ? ? 2 ? n eff ; in addition, the grating period of the micro-grating structures in the second grating region is in accordance with the following mathematical formula: ? = o ? ? 2 ? n eff . Wherein ? is the length of grating period, ? is the wavelength of the laser light, neff is the equivalent refractive index of semiconductor waveguide, m=1, and o=2.

Abstract: The grating layer of a surface emitting laser is divided into a first grating region and a second grating region along a horizontal direction. The second grating region is located at a middle area of the grating layer, while the first grating region is located in an outer peripheral area of the grating layer. Each of the first and second grating regions comprises a plurality of micro-grating structures. The grating period of the micro-grating structures in the first grating region is in accordance with the following mathematical formula: ? = m ? ? 2 * n eff ; in addition, the grating period of the micro-grating structures in the second grating region is in accordance with the following mathematical formula: ? = o ? ? 2 * n eff . Wherein, ? is the length of grating period, ? is the wavelength of the laser light, neff is the equivalent refractive index of semiconductor waveguide, m=1, and o=2.

Abstract: The grating layer of a surface emitting laser is divided into a first grating region and a second grating region along a horizontal direction. The second grating region is located at a middle area of the grating layer, while the first grating region is located in an outer peripheral area of the grating layer. Each of the first and second grating regions comprises a plurality of micro-grating structures. The grating period of the micro-grating structures in the first grating region is in accordance with the following mathematical formula: ? = m ? 2 ? n e f f ; in addition, the grating period of the micro-grating structures in the second grating region is in accordance with the following mathematical formula: ? = O ? 2 ? n e f f . Wherein, ? is the length of grating period, ? is the wavelength of the laser light, neff is the equivalent refractive index of semiconductor waveguide, m=1, and o=2.

Abstract: The grating layer of a surface emitting laser is divided into a first grating region and a second grating region along a horizontal direction. The second grating region is located at a middle area of the grating layer, while the first grating region is located in an outer peripheral area of the grating layer. Each of the first and second grating regions comprises a plurality of micro-grating structures. The grating period of the micro-grating structures in the first grating region is in accordance with the following mathematical formula: ? = m ? ? 2 * n eff ; in addition, the grating period of the micro-grating structures in the second grating region is in accordance with the following mathematical formula: ? = o ? ? 2 * n eff . Wherein, ? is the length of grating period, ? is the wavelength of the laser light, neff is the equivalent refractive index of semiconductor waveguide, m=1, and o=2.

Abstract: A structure of distributed feedback (DFB) laser includes a grating layer having a phase-shift grating structure and a gratingless area. In addition, both side-surfaces of the DFB laser are coated with anti-reflection coating to improve SMSR and to obtain good slope efficiency (SE). The grating layer is divided by the phase-shift grating structure in a horizontal direction into a first grating area and a second grating area adjacent to a laser-out surface of the DFB laser. The phase-shift grating structure provides a phase-difference distance, such that a shift of phase exists between the micro-grating structures located within the first grating area and the other micro-grating structures located within the second grating area. The gratingless area located within the second grating area contains no micro-grating structure, and moreover, the gratingless area will not change the phase of the micro-grating structures located within the second grating area.

Abstract: A structure of distributed feedback (DFB) laser includes a grating layer having a phase-shift grating structure and a gratingless area. In addition, both side-surfaces of the DFB laser are coated with anti-reflection coating to improve SMSR and to obtain good slope efficiency (SE). The grating layer is divided by the phase-shift grating structure in a horizontal direction into a first grating area and a second grating area adjacent to a laser-out surface of the DFB laser. The phase-shift grating structure provides a phase-difference distance, such that a shift of phase exists between the micro-grating structures located within the first grating area and the other micro-grating structures located within the second grating area. The gratingless area located within the second grating area contains no micro-grating structure, and moreover, the gratingless area will not change the phase of the micro-grating structures located within the second grating area.