Abstract: A preparation method of a passivated contact structure includes: forming a tunneling layer on a semiconductor substrate; forming an intrinsic semiconductor layer on the tunneling layer; forming a doped layer containing a dopant on the intrinsic semiconductor layer, and performing an activation treatment on the doped layer to diffuse the dopant in the doped layer into the intrinsic semiconductor layer to form a doped semiconductor layer. The tunneling layer and the doped semiconductor layer form the passivated contact structure.

Abstract: The present application relates to a method for manufacturing a solar cell. In the method, a wafer including a substrate and a doped conducting material layer is provided. A first surface and a portion of a first side surface of the substrate include a textured structure. The doped conducting material layer covers the textured structure. A passivating contact material layer is formed on each surface of the wafer. The wafer formed with the passivating contact material layer is cut along the thickness direction of the substrate to form a sub-wafer, so as to form a doped conducting layer. The passivating contact material layer is etched to form a passivating contact layer. A first passivation layer is formed on the doped conducting layer, and further covers at least a portion of a cut edge side surface which is a side surface of the sub-wafer formed by cutting the wafer.

Abstract: A conductive paste and a solar cell. The conductive paste includes a conductive powder, a first glass frit, and a second glass frit. The first glass frit includes at least one of lead-containing glass and bismuth-containing glass. A glass transition temperature of the second glass frit is greater than 600° C. In the conductive paste, a weight percentage of the first glass frit ranges from 0.5% to 5%, and a weight percentage of the second glass frit ranges from 0.5% to 10%.

Abstract: The present disclosure relates to a solar cell, a method for manufacturing the same, and a photovoltaic module. A method includes: providing a semiconductor substrate; forming a tunnel layer on a surface of the semiconductor substrate; sequentially forming an undoped initial intrinsic material layer and a doped layer including a dopant on a surface of the tunnel layer; the dopant including either an N-type dopant or a P-type dopant; and performing heat treatment on the initial intrinsic material layer and the doped layer to diffuse the dopant in the doped layer to the initial intrinsic material layer and at least partially crystallize the initial intrinsic material layer, so as to convert the initial intrinsic material layer into a doped passivation layer.

Abstract: The present disclosure relates to a solar cell, a preparation method thereof, and a photovoltaic module. The solar cell includes a substrate including a first surface, a passivating contact structure disposed on a part of the first surface, and a first electrode disposed on a side of the passivating contact structure away from the substrate and electrically connected to the passivating contact structure. A marking portion is disposed on a part of the passivating contact structure.

Abstract: The present disclosure relates to the field of solar cell technologies. The present disclosure provides a solar cell and a manufacturing method therefor, a photovoltaic module, and a photovoltaic system. The solar cell includes: a substrate; a tunnel oxide layer stacked on a surface of the substrate, the tunnel oxide layer being an oxide layer including at least a silicon element and an oxygen element; and a polysilicon doped conductive layer stacked on a side of the tunnel oxide layer facing away from the substrate. The tunnel oxide layer is doped with a carbon element and a hydrogen element.

Abstract: The present application provides a large-area perovskite layer and a preparation method thereof. The preparation method includes: dissolving raw materials of a perovskite in an ionic liquid or in a mixture of the ionic liquid and an organic solvent, thereby forming a perovskite precursor, and coating the perovskite precursor onto a surface of a crystalline silicon bottom cell, thereby forming the perovskite layer.

Abstract: A solar cell and a manufacturing method thereof, a photovoltaic module, and a photovoltaic system. A doped layer of the solar cell includes a lightly doped region and a heavily doped region, the heavily doped region includes a body region, connecting regions, and edge regions, and an electrode includes an electrode body, connecting electrodes and edge electrodes. The body region substantially corresponds to the electrode body, and the connecting regions and the edge regions can provide spaces exceeding the spaces corresponding to the connecting electrodes and the edge electrodes.

Abstract: The present application relates to a solar cell and a method for manufacturing same, a photovoltaic module, and a photovoltaic system. The solar cell includes a substrate, a doped conducting layer, a first passivation layer, a passivating contact layer, and a second passivation layer. At least a first surface and a portion of a first side surface of the substrate include a textured structure. The doped conducting layer is disposed at least on the first surface and the first side surface to cover the textured structure. The first passivation layer is stacked on the doped conducting layer and covers the first surface and the first side surface to cover the doped conducting layer. The passivating contact layer is disposed on a second surface of the substrate. The second passivation layer is stacked on the passivating contact layer and covers the second surface to cover the passivating contact layer.

Abstract: A solar cell includes: a substrate including a first surface and a second surface arranged opposite to each other and a plurality of lateral surfaces adjacent to and located between the first surface and the second surface; a plurality of pyramid base shaped textured structures being constructed on the second surface and each of the lateral surfaces, wherein a minimum side length of each of top surfaces of the pyramid base shaped textured structures arranged on the lateral surfaces is L1, a maximum side length of each of top surfaces of the pyramid base shaped textured structures arranged on the second surface is L2, and L1>L2; a doped conductive layer arranged on the first surface; and a passivated contact layer including a polysilicon doped conductive layer, the passivated contact layer being arranged on the second surface.

Abstract: The present application relates to a solar cell and a method for manufacturing same, a photovoltaic module, and a photovoltaic system. The solar cell includes a substrate, a doped conducting layer, a first passivation layer, a passivating contact layer, and a second passivation layer. At least a first surface and a portion of a first side surface of the substrate include a textured structure. The doped conducting layer is disposed at least on the first surface and the first side surface to cover the textured structure. The first passivation layer is stacked on the doped conducting layer and covers the first surface and the first side surface to cover the doped conducting layer. The passivating contact layer is disposed on a second surface of the substrate. The second passivation layer is stacked on the passivating contact layer and covers the second surface to cover the passivating contact layer.

Abstract: A solar cell includes: a substrate including a first surface and a second surface arranged opposite to each other and a plurality of lateral surfaces adjacent to and located between the first surface and the second surface; a plurality of pyramid base shaped textured structures being constructed on the second surface and each of the lateral surfaces, wherein a minimum side length of each of top surfaces of the pyramid base shaped textured structures arranged on the lateral surfaces is L1, a maximum side length of each of top surfaces of the pyramid base shaped textured structures arranged on the second surface is L2, and L1>L2; a doped conductive layer arranged on the first surface; and a passivated contact layer including a polysilicon doped conductive layer, the passivated contact layer being arranged on the second surface.

Abstract: The present application relates a solar cell, a photovoltaic device and a photovoltaic system. The solar cell includes a substrate, a first passivation layer, and a second passivation layer. The substrate includes a first surface and a second surface opposite to each other along a thickness direction of the substrate. The first passivation layer is disposed on the first surface of the substrate. The second passivation layer is disposed on a side of the first passivation layer away from the substrate. A material of the first passivation layer is the same as that of the second passivation layer. An atomic packing density of the first passivation layer is higher than that of the second passivation layer. An average thickness of the first passivation layer is smaller than that of the second passivation layer.

Abstract: The present application relates to a passivating contact structure and a preparation method thereof, and a solar cell and a preparation method thereof. In the method for preparing the passivating contact structure, a tunnel layer is formed on a side of a substrate; an initial stack structure is formed on a side of the tunnel layer away from the substrate. The initial stack structure includes polysilicon layers and a doped layer alternately stacked. In the initial stack structure, an innermost layer is most adjacent to the tunnel layer, an outermost layer is most away from the tunnel layer, the innermost layer and the outermost layer are both polysilicon layers. The doped layer is a polysilicon material layer doped with a dopant. The dopant is activated, such that the dopant diffuses into the polysilicon layers, thereby transforming the initial stack structure into a doped stack structure with uniform distribution of dopant.

Abstract: The present application provides a film preparation method, a solar cell, a photovoltaic device, and a photovoltaic system. The film preparation method includes forming a first passivation layer on a first surface of a substrate by using a first preparation technique; and forming a second passivation layer on a surface of the first passivation layer away from the substrate by using a second preparation technique, a material of the second passivation layer is the same as that of the first passivation layer; wherein a passivation layer forming speed of the first preparation technique is lower than that of the second preparation technique, and a passivation effect of the first passivation layer is better than that of the second passivation layer.

Abstract: A solar cell and a manufacturing method thereof, and a photovoltaic system. The solar cell includes: a substrate layer including a first surface and a second surface arranged oppositely along a thickness direction thereof; a tunnel oxide layer, a first doped polysilicon layer, and a first passivation layer sequentially arranged on the first surface of the substrate layer in a direction gradually away from the substrate layer; and a first finger electrode layer, at least one of the first fingers being arranged in first connection holes, bottoms of the first connection holes being located in the first doped polysilicon layer, and the first fingers passing through the first connection holes corresponding thereto to be electrically connected to the first doped polysilicon layer; and in the first direction, widths of the first connection holes being all less than widths of the first fingers corresponding to the first connection holes.

Abstract: The present application relates a solar cell, a photovoltaic device and a photovoltaic system. The solar cell includes a substrate, a first passivation layer, and a second passivation layer. The substrate includes a first surface and a second surface opposite to each other along a thickness direction of the substrate. The first passivation layer is disposed on the first surface of the substrate. The second passivation layer is disposed on a side of the first passivation layer away from the substrate. A material of the first passivation layer is the same as that of the second passivation layer. An atomic packing density of the first passivation layer is higher than that of the second passivation layer. An average thickness of the first passivation layer is smaller than that of the second passivation layer.

Abstract: The present application relates to a passivating contact structure and a preparation method thereof, and a solar cell and a preparation method thereof. In the method for preparing the passivating contact structure, a tunnel layer is formed on a side of a substrate; an initial stack structure is formed on a side of the tunnel layer away from the substrate. The initial stack structure includes polysilicon layers and a doped layer alternately stacked. In the initial stack structure, an innermost layer is most adjacent to the tunnel layer, an outermost layer is most away from the tunnel layer, the innermost layer and the outermost layer are both polysilicon layers. The doped layer is a polysilicon material layer doped with a dopant. The dopant is activated, such that the dopant diffuses into the polysilicon layers, thereby transforming the initial stack structure into a doped stack structure with uniform distribution of dopant.

Abstract: The present disclosure relates to the field of solar cell technologies. The present disclosure provides a solar cell and a manufacturing method therefor, a photovoltaic module, and a photovoltaic system. The solar cell includes: a substrate; a tunnel oxide layer stacked on a surface of the substrate, the tunnel oxide layer being an oxide layer including at least a silicon element and an oxygen element; and a polysilicon doped conductive layer stacked on a side of the tunnel oxide layer facing away from the substrate. The tunnel oxide layer is doped with a carbon element and a hydrogen element.

Abstract: A solar cell comprises a silicon substrate including a first surface and a second surface opposite to each other; a first doped layer disposed on the first surface; a second doped layer disposed on the second surface, a doped type of the first doped layer is opposite to a doped type of the second doped layer; a first electrode connecting to the first doped layer; a second electrode connecting to the second doped layer; and an isolation trench penetrating the first doped layer along a thickness direction of the silicon substrate and surrounding the first electrode.