Abstract: A low friction wear film includes a chromium layer provided on a surface of a metal substrate, a tungsten carbide layer provided on a surface of the chromium layer, and a diamond-like carbon layer as a top layer provided on a surface of the tungsten carbide layer. The tungsten carbide layer includes a chromium-tungsten carbide gradient layer and a tungsten carbide uniform layer. In the tungsten carbide layer, a tungsten-concentrated layer in which a tungsten simple substance is present is not provided at a boundary between the chromium-tungsten carbide gradient layer and the tungsten carbide uniform layer.

Abstract: A method, a unit and circuits for implementing Boolean logics based on computing-in-memory transistors. The method is implemented by using the characteristics and the read-write mode of the computing-in-memory transistor; the basic unit consists of a computing-in-memory transistor and a pull resistor; the pull resistor in the basic unit is connected in series with the transistor, and the gate of the transistor is independent; the basic units can implement sixteen Boolean logic operations through different circuit structures and voltage configuration schemes. Compared with the logic circuit structure of the conventional CMOS transistors, the present disclosure can implement more logic operations with fewer transistors, which greatly optimizes circuit density and computing speed caused by data transmission between storage units and process units.

Abstract: A low friction wear film includes a chromium layer provided on a surface of a metal substrate, a tungsten carbide layer provided on a surface of the chromium layer, and a diamond-like carbon layer as a top layer provided on a surface of the tungsten carbide layer. The tungsten carbide layer includes a chromium-tungsten carbide gradient layer and a tungsten carbide uniform layer. In the tungsten carbide layer, a tungsten-concentrated layer in which a tungsten simple substance is present is not provided at a boundary between the chromium-tungsten carbide gradient layer and the tungsten carbide uniform layer.

Abstract: A component part for an aluminum die-casting mold has an exposed surface that is a surface exposed to a cavity part of the aluminum die-casting mold and has diamond-like carbon coating formed at least on a part of the exposed surface, wherein the diamond-like carbon coating contains hydrogen in a content rate of 10 at % or more and 30 at % or less. The diamond-like carbon coating may further contain silicon in a content rate of less than 10 at %. Preferably, the content rate of silicon in the diamond-like carbon coating is 0.5 at % or more and 7 at % or less. Thereby, a component part for an aluminum die-casting mold which has excellent seizure resistance against molten metal containing aluminum can be provided.