Abstract: Azo-type optically active compounds and polymers are provided based on compounds of the general structure[substituted aryl]--N.dbd.N--[substituted aryl]wherein aryl substituents are introduced which hinder or prohibit rotation around the single bonds of the --N.dbd.N-- central moiety (as well as around certain other single bonds), to provide "planarized" structures having improved optically active properties, especially electro-optically active properties. These compounds and polymers find use in optically active waveguides.

Abstract: Essentially alternating copolymers of hexafluoroisobutylene (HFIB) and vinyl acetate (VA) are prepared under homogeneous radial conditions. They are soluble in polar solvents such as ketones, dimethylforamide, and diglyme. Their solutions can be used to cast films and for coatings. They can be hydrolyzed to form copolymers of HFIB and vinyl alcohol (VOH).

Abstract: Photosensitizers containing saturated and unsaturated polycyclic compounds containing the cyclopentane-2-diazo-1,3-dione structural unit.These compounds have their maximum u.v. absorption at around 248 nm, decompose into polar products upon irradiation, and can be used as photosensitizers in positive deep u.v. or excimer laser (248 nm) lithography. They are most preferably useful with deep u.v. transparent resins for forming photoresists.

Abstract: The invention provides a method for making optionally active polymers having a carbon-to-carbon backbone chain and pendant "transducer" groups having an azo linkage which involves azo-coupling, in homogeneous solution, a carbon-to-carbon backbone polymer having pendant groups terminating in an aromatic group with an aromatic diazonium salt, and recovering the resultant reaction product.

Abstract: Photoresist compositions suitable for deep UV and excimer laser lithography are disclosed that are mixtures of a photoacid and a polymer having imide residues to which acid labile groups are attached. These compositions provide high resolution, high contrast and high sensitivity in the deep UV (wavelength of 250-300 nm), mid-UV (wavelength of 300-350 nm) or conventional (wavelength of 350-450 nm) exposure bands. The compositions are also suitable for exposure at wavelengths commonly associated with excimer laser sources (248, 308 nm) or for exposure by X-radiation.In the compositions disclosed, the imide group ##STR1## can be blocked with certain groups, X, to form compounds containing the structure ##STR2## which have solubility properties different from the unblocked imide. These groups, X, can be cleaved by acid under the proper conditions to regenerate the unblocked imide.

Abstract: Photoresist compositions suitable for deep UV and excimer laser lithography are disclosed that are mixtures of a photoacid and a polymer having imide residues to which acid labile groups are attached. These compositions provide high resolution, high contrast and high sensitivity in the deep UV (wavelength of 250-300 nm), mid-UV (wavelength of 300-350 nm) or conventional (wavelength of 350-450 nm) exposure bands. The compositions are also suitable for exposure at wavelengths commonly associated with excimer laser sources (248, 308 nm) or for exposure by X-radiation.In the compositions disclosed, the imide group ##STR1## can be blocked with certain groups, X, to form compounds containing the structure ##STR2## which have solubility properties different from the unblocked imide. These groups, X, can be cleaved by acid under the proper conditions to regenerate the unblocked imide.