Patents by Inventor Chengkai Chai

Chengkai Chai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • AC-side symmetrically-split single-phase inverter for decoupling
    Patent number: 11695322
    Abstract: An alternating current (AC)-side symmetrically-split single-phase inverter for decoupling, which includes an H-bridge inverter, the H-bridge inverter includes an upper half-bridge structure and a lower half-bridge structure that are symmetrical to each other, the upper half-bridge structure includes an upper half-bridge first unit and an upper half-bridge second unit in parallel, the upper half-bridge first unit includes an insulated-gate bipolar transistor G1, a diode D1, and a capacitor C3 in parallel, the upper half-bridge second unit includes an insulated-gate bipolar transistor G3, a diode D3, and a capacitor C4 in parallel; and the lower half-bridge structure includes a lower half-bridge first unit and a lower half-bridge second unit in parallel, the lower half-bridge first unit includes an insulated-gate bipolar transistor G2, a diode D2, and a capacitor C1 in parallel, the lower half-bridge second unit includes an insulated-gate bipolar transistor G4, a diode D4, and a capacitor C2 in parallel.
    Type: Grant
    Filed: November 9, 2021
    Date of Patent: July 4, 2023
    Assignee: East China Jiaotong University
    Inventors: Yonggao Zhang, Yue Fan, Peng Liu, Weidong Fu, Siyuan Ze, Chengkai Chai
  • AC-SIDE SYMMETRICALLY-SPLIT SINGLE-PHASE INVERTER FOR DECOUPLING
    Publication number: 20220149716
    Abstract: An alternating current (AC)-side symmetrically-split single-phase inverter for decoupling, which includes an H-bridge inverter, the H-bridge inverter includes an upper half-bridge structure and a lower half-bridge structure that are symmetrical to each other, the upper half-bridge structure includes an upper half-bridge first unit and an upper half-bridge second unit in parallel, the upper half-bridge first unit includes an insulated-gate bipolar transistor G1, a diode D1, and a capacitor C3 in parallel, the upper half-bridge second unit includes an insulated-gate bipolar transistor G3, a diode D3, and a capacitor C4 in parallel; and the lower half-bridge structure includes a lower half-bridge first unit and a lower half-bridge second unit in parallel, the lower half-bridge first unit includes an insulated-gate bipolar transistor G2, a diode D2, and a capacitor C1 in parallel, the lower half-bridge second unit includes an insulated-gate bipolar transistor G4, a diode D4, and a capacitor C2 in parallel.
    Type: Application
    Filed: November 9, 2021
    Publication date: May 12, 2022
    Inventors: Yonggao Zhang, Yue Fan, Peng Liu, Weidong Fu, Siyuan Ze, Chengkai Chai