Patents by Inventor Chengkai WU

Chengkai WU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11735321
    Abstract: Provided is a system for the prognostics of the chronic diseases after the medical examination based on the multi-label learning, including a data acquisition module, a data preprocessing module, a basic predicting model constructing module, and a local predicting module. The data acquisition module is configured to acquire physical examination data of a physical examination user. The basic predicting model constructing module is configured to construct a multi-label learning model for a physical examination scenario. The local predicting module includes a local model training unit and a predicting unit. The local model training unit adjusts the basic predicting model into a local predicting model, and solidifies the local predicting model into the local predicting module. The predicting unit outputs a predicted prognostic index for an occurrence of a plurality of chronic diseases, and finally acquires a future expected occurrence time of the chronic diseases.
    Type: Grant
    Filed: December 7, 2021
    Date of Patent: August 22, 2023
    Assignee: ZHEJIANG LAB
    Inventors: Jingsong Li, Tianshu Zhou, Chengkai Wu, Ying Zhang
  • Patent number: 11482628
    Abstract: A double Schottky-barrier diode includes a semi-insulating substrate, a left mesa formed by growth and etching on the semi-insulating substrate, a middle mesa formed by growth and etching on the semi-insulating substrate, a right mesa formed by growth and etching on the semi-insulating substrate, two anode probes and two air-bridge fingers. The two Schottky contacts are closely fabricated on the same mesa (middle mesa) in a back-to-back manner to obtain even symmetric C-V characteristics and odd symmetric I-V characteristics from the device level. The output of a frequency multiplier fabricated using the double Schottky-barrier diode only has odd harmonics, but no even harmonics, which is suitable for the production of high-order frequency multipliers. The cathodes of the two Schottky contacts are connected by the buffer layer without ohmic contact.
    Type: Grant
    Filed: October 23, 2020
    Date of Patent: October 25, 2022
    Assignee: UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA
    Inventors: Yong Zhang, Chengkai Wu, Han Wang, Haomiao Wei, Ruimin Xu, Bo Yan
  • Publication number: 20220093257
    Abstract: Provided is a system for the prognostics of the chronic diseases after the medical examination based on the multi-label learning, including a data acquisition module, a data preprocessing module, a basic predicting model constructing module, and a local predicting module. The data acquisition module is configured to acquire physical examination data of a physical examination user. The basic predicting model constructing module is configured to construct a multi-label learning model for a physical examination scenario. The local predicting module includes a local model training unit and a predicting unit. The local model training unit adjusts the basic predicting model into a local predicting model, and solidifies the local predicting model into the local predicting module. The predicting unit outputs a predicted prognostic index for an occurrence of a plurality of chronic diseases, and finally acquires a future expected occurrence time of the chronic diseases.
    Type: Application
    Filed: December 7, 2021
    Publication date: March 24, 2022
    Inventors: Jingsong LI, Tianshu ZHOU, Chengkai WU, Ying ZHANG
  • Publication number: 20210217901
    Abstract: A double Schottky-barrier diode includes a semi-insulating substrate, a left mesa formed by growth and etching on the semi-insulating substrate, a middle mesa formed by growth and etching on the semi-insulating substrate, a right mesa formed by growth and etching on the semi-insulating substrate, two anode probes and two air-bridge fingers. The two Schottky contacts are closely fabricated on the same mesa (middle mesa) in a back-to-back manner to obtain even symmetric C-V characteristics and odd symmetric I-V characteristics from the device level. The output of a frequency multiplier fabricated using the double Schottky-barrier diode only has odd harmonics, but no even harmonics, which is suitable for the production of high-order frequency multipliers. The cathodes of the two Schottky contacts are connected by the buffer layer without ohmic contact.
    Type: Application
    Filed: October 23, 2020
    Publication date: July 15, 2021
    Applicant: University of Electronic Science and Technology of China
    Inventors: Yong ZHANG, Chengkai WU, Han WANG, Haomiao WEI, Ruimin XU, Bo YAN