Abstract: The present invention generally relates to optical communication systems, and more particularly, to an apparatus combining microelectromechanical systems (MEMS) elements and optical wavelength division multiplexing/demultiplexing (WDM) elements for optical wavelength selective add/drop application. Wherein, optical fiber arrays or optical planar waveguide arrays are used as the input terminal and the output terminal of multiple optical signals. Moreover, 1×N one-dimensional micro-mirror arrays manufactured by using the MEMS technology are applied to change the transmitting directions of the optical signal of each channel between the input terminals and the output terminals, thus, it achieves the purpose of switching the optical signals from one channel of input terminals to another corresponding channel of output terminals.

Abstract: A bulk acoustic wave multiplexer controlled by micro-electro-mechanical switches, it comprises: a substrate; a wave-filtering device disposed on the substrate; an input port disposed on one side of the wave-filtering device; an output port disposed on another side of the wave-filtering device; and micro-electro-mechanical switches disposed on the wave-filtering device for controlling the bulk acoustic wave multiplexer; the present invention provides a bulk acoustic wave multiplexer device having miniaturized size and less interference integrated with micro-electro-mechanical switch devices, so as to operate multiplexing function.

Abstract: A method for manufacturing a film bulk acoustic wave filter, wherein a single-layer high-acoustic-impedance reflection layer is applied for the film bulk acoustic wave, for example, a diamond film with single-layer high-acoustic-impedance or a BCB film with single-layer low-acoustic-impedance is used as a reflection layer under the film bulk acoustic wave device in order to replace the cavity-reflective construction or the multi-layer reflection construction that are presently used; thus, there is no need for etching the cavity, the steadiness of the device and the yield of the device can be improved, and the FOM (figure of merit) of the film acoustic wave device is also improved; further, as there is no backside etching and front-side etching proceeded, the size of die is reduced greatly, so it is advantageous to mass production.

Abstract: A bulk acoustic wave multiplexer controlled by micro-electro-mechanical switches, it comprises: a substrate; a wave-filtering device disposed on the substrate; an input port disposed on one side of the wave-filtering device; an output port disposed on another side of the wave-filtering device; and micro-electro-mechanical switches disposed on the wave-filtering device for controlling the bulk acoustic wave multiplexer; the present invention provides a bulk acoustic wave multiplexer device having miniatuized size and less interference integrated with micro-electro-mechanical switch devices, so as to operate multiplexing function.

Abstract: A bulk acoustic wave filter device and its package. The filter devices greatly decreases the manufacturing process complexity by the coplanar electrode layout, and it omits the process steps of forming via hole of connectors, such that it is convenient to the coplanar high frequency on-wafer measurement and trimming. Furthermore, by using the wafer level chip scale package (WLCSP) technique, which to integrate the series resonator and the shunt resonator can be integrated, the spaces of filter can be saved and the cost of package can be down.

Abstract: A thermoelectric sensor device is disclosed consisting of polysilicon, titanium or AlSiCu as the thermocouple of material for thermoelectric sensor device. The features of the present process are: Selecting a material such as aluminum, titanium, aluminum alloy or titanium alloy with lower thermal conductivity coefficient as thermocouple element line and making use of zigzag structure with thermocouple element line, and increasing the length of thermocouple element line. Employing front side Si bulk etching technique to etch the silicon substrate, which is under the device and empty of silicon substrate, so as to reduce the superficial measure of thermoelectric sensor module and increase the throughout of the silicon wafer. Simultaneously, fabricating a resistor to treat as a heater on the membrane for adjusting the device.