Abstract: This application provides a bulk acoustic wave resonator and a bulk acoustic wave filter, and relates to the technical field of filters. The bulk acoustic wave resonator includes a substrate, and a bottom electrode, a piezoelectric layer, a top electrode which are sequentially stacked on the substrate, and an outline of an orthographic projection of the top electrode on the substrate is formed by four curves which are end-to-end connected. Arc transition is set at a joint of every two adjacent curves, and every two curves arranged in a spaced manner are not parallel. Accordingly, reliability of devices can be effectively improved, meanwhile, parasitic resonance amplitude can be effectively restrained, a Q value is increased, and thus device properties are improved.

Abstract: Disclosed are a Nested Named Entity Recognition method based on part-of-speech awareness, system, device and storage medium therefor. The method uses a BiLSTM model to extract a feature of text word data in order to obtain a text word depth feature, and each text word of text to be recognized is initialized into a corresponding graph node, and a text heterogeneous graph of the text to be recognized is constructed according to a preset part-of-speech path, the text word data of the graph nodes is updated by an attention mechanism, and the features of all graph nodes of the text heterogeneous graph are extracted using the BiLSTM model, and a nested named entity recognition result is obtained after decoding and annotating. The present disclosure can recognize ordinary entities and nested entities accurately and effectively, and enhance the performance and advantages of the nested named entity recognition model.

Abstract: A piezoelectric microphone, includes: a wafer substrate including a cavity; a plurality of cantilever beams with a piezoelectric deck structure; a fixed column; a plurality of flexible elastic members; and a connecting section. The plurality of cantilever beams each includes a fixed end and a free end suspended above the cavity. The plurality of cantilever beams is of a structure in which one end is narrow and the other end is wide, and the fixed end is relatively narrow. The fixed column is disposed at the center of the bottom surface of the cavity. The fixed ends of the plurality of cantilever beams are all connected to the top surface of the fixed column. A gap is provided between every two adjacent cantilever beams. The plurality of flexible elastic members is connected to free ends of two adjacent cantilever beams to enable the cantilever beams to vibrate synchronously.

Abstract: The present disclosure provides a film bulk acoustic wave resonator and a preparation method thereof, and relates to the technical field of semiconductors. The film bulk acoustic wave resonator includes a substrate and a bottom electrode, a piezoelectric layer and a top electrode which are located on an upper surface of the substrate, the bottom electrode is provided with a first arched part so as to form a first cavity between the first arched part and the substrate; and a first reflection cavity is formed between the bottom electrode and the piezoelectric layer and located in a slope of the first arched part, the bottom electrode is provided with the first arched part and the first reflection cavity may be located in an oblique plane of the slope of the first arched part.

Abstract: The present application provides a resonator and a method of preparing same, and relates to the field of semiconductor technologies. The method includes: providing a device wafer, wherein the device wafer includes a first substrate and a piezoelectric layer, a bottom electrode, and a first mass loading layer formed in sequence on the first substrate; forming, on the bottom electrode, a sacrificial layer covering the first mass loading layer; forming a supporting layer on one side of the device wafer with the sacrificial layer; forming a second substrate on the supporting layer through a bonding process; removing the first substrate to expose the piezoelectric layer; forming a top electrode and a second mass loading layer in sequence on the piezoelectric layer; and releasing the sacrificial layer to form a cavity between the first mass loading layer and the supporting layer.

Abstract: The present application discloses a piezoelectric micro electrical mechanical system (MEMS) microphone chip and a piezoelectric MEMS microphone, and relates to the technical field of piezoelectric devices. The piezoelectric MEMS microphone chip includes at least one substrate frame and at least one plurality of sound receiving beams arranged on the substrate frame. Each of the sound receiving beams includes a connecting beam and a cantilever beam. The connecting beam and the cantilever beam are staggered on a circumference. One ends of the plurality of sound receiving beams that face a geometric center of the a circumference are fixedly connected to one another in a center defined by the substrate frame, and one end of the connecting beam that is away from the geometric center is fixedly connected to the substrate frame.

Abstract: The present application provides a resonator and a preparation method for a resonator, and relates to the technical field of semiconductors. The method involves introducing a first single crystal substrate to facilitate the epitaxial growth of a high-quality single crystal piezoelectric layer on the first single crystal substrate, and firstly performing ion implantation on the first single crystal substrate to form a damaged layer at a certain depth within it. Therefore, while the first single crystal substrate is removed, it is firstly possible to adopt the heating process, and after the first single crystal substrate is subjected to high-temperature treatment, a first layer and a second layer are split at the damaged layer, thereby a part of the first single crystal substrate is firstly removed, and then the remaining part of the first single crystal substrate is removed by trimming, etching, and other modes.

Abstract: A resonator and a preparation method of a resonator, and a filter relate to the technical field of resonators.

Abstract: The present disclosure provides a single crystal film bulk acoustic resonator, a manufacturing method for a single crystal film bulk acoustic resonator, and a filter, and relates to the technical field of filters. The method includes: sequentially forming a buffer layer, a piezoelectric layer, and a first electrode that are stacked on a temporary base substrate; forming a first bonding layer on the first electrode; providing a substrate; etching the substrate to form a plurality of first bumps on a surface of the substrate; forming a second bonding layer covering top surfaces of the plurality of first bumps on the surface of the substrate; and bonding the second bonding layer located at the top surfaces of the plurality of first bumps to the first bonding layer.

Abstract: This present disclosure provides a bulk acoustic wave resonator and a bulk acoustic wave filter, and relates to the technical field of filters. A substrate and a piezoelectric stack structure arranged on the substrate are included. The piezoelectric stack structure includes a bottom electrode, a piezoelectric material layer and a top electrode which are sequentially stacked, and an outline of an orthographic projection of the top electrode on the substrate includes at least one Bezier curve of order greater than or equal to 2.

Abstract: The disclosure provides a film bulk acoustic resonator and a manufacturing method therefor, and a film bulk acoustic wave filter, and relates to the technical field of resonators. The film bulk acoustic resonator includes a substrate, where the substrate is provided with two opposite protective walls protruding out of a surface of the substrate, a cavity is formed between the two protective walls, and an insulating layer is further arranged on one side, away from the cavity, of each protective wall on the substrate; and the film bulk acoustic resonator further includes a transducer stacking structure, where the transducer stacking structure covers the insulating layer, the cavity and the protective walls, and two sides, along a stacking direction, of the transducer stacking structure are in communication with the cavity and the outside respectively.

Abstract: A resonator, a filter and a duplexer, which relate to the technical field of resonators. The resonator includes: a substrate, and a lower electrode layer, a piezoelectric layer and an upper electrode layer, which are sequentially formed on the substrate, wherein an acoustic reflection structure is formed on a surface of the substrate that is close to the lower electrode layer, and an overlapping region of the acoustic reflection structure, the lower electrode layer, the piezoelectric layer and the upper electrode layer along a stacking direction forms a resonant region; and in the resonant region, the surface, which is away from the substrate, of at least one of the lower electrode layer, the piezoelectric layer and the upper electrode layer is etched to form an etched region, the depth of the etched region is less than the thickness of an etched layer, and the area of the etched region is less than the area of the resonant region.

Abstract: Provided are a bulk acoustic resonator and a filter. The bulk acoustic resonator includes a substrate having a cavity, and a bottom electrode, a piezoelectric layer and a top electrode that are sequentially arranged on the substrate, where an overlapping area of orthographic projections of the bottom electrode, the piezoelectric layer and the top electrode on the substrate forms a resonance area; and in the resonance area, an outline shape of the orthographic projection of each of the bottom electrode and the top electrode on the substrate is a closed figure formed by connecting M arcs end to end, and the closed figure is an axisymmetric figure, where M is an integer greater than or equal to 2, and the arcs include a concave arc that is concave toward a center of the resonance area and a convex arc that is convex away from the center of the resonance area.

Abstract: The disclosure discloses a two-dimensional high-performance resonator, which is specifically an ultra-high-frequency resonator structure capable of improving an electromechanical coupling coefficient of the resonator. The resonator includes a piezoelectric layer, where an electrode layer is distributed on the upper surface of the piezoelectric layer, the electrode layer includes a plurality of electrodes arranged in a horizontal direction with a distance therebetween greater than four wavelengths, and a bridge structure is arranged on an upper portion of the electrode layer. The resonator structure can effectively improve the resonance frequency and the electromechanical coupling coefficient of the resonator, and can meet the requirements of the 5G market, and the quality factor is greatly improved.

Abstract: A piezoelectric microphone, includes: a wafer substrate including a cavity; a plurality of cantilever beams with a piezoelectric deck structure; a fixed column; a plurality of flexible elastic members; and a connecting section. The plurality of cantilever beams each includes a fixed end and a free end suspended above the cavity. The plurality of cantilever beams is of a structure in which one end is narrow and the other end is wide, and the fixed end is relatively narrow. The fixed column is disposed at the center of the bottom surface of the cavity. The fixed ends of the plurality of cantilever beams are all connected to the top surface of the fixed column. A gap is provided between every two adjacent cantilever beams. The plurality of flexible elastic members is connected to free ends of two adjacent cantilever beams to enable the cantilever beams to vibrate synchronously.

Abstract: According to embodiments of the present invention, an energy harvesting device is provided. The energy harvesting device includes a plurality of energy harvesting elements, each energy harvesting element including a transducer, and at least one spring arranged in between at least two energy harvesting elements of the plurality of energy harvesting elements to mechanically couple the at least two energy harvesting elements to each other. According to further embodiments of the present invention, a method for forming an energy harvesting device is also provided.

Abstract: A microelectromechanical system (MEMS) accelerometer having separate sense and force-feedback electrodes is disclosed. The use of separate electrodes may in some embodiments increase the dynamic range of such devices. Other possible advantages include, for example, better sensitivity, better noise suppression, and better signal-to-noise ratio. In one embodiment, the accelerometer includes three silicon wafers, fabricated with sensing electrodes forming capacitors in a fully differential capacitive architecture, and with separate force feedback electrodes forming capacitors for force feedback. These electrodes may be isolated on a layer of silicon dioxide. In some embodiments, the accelerometer also includes silicon dioxide layers, piezoelectric structures, getter layers, bonding pads, bonding spacers, and force feedback electrodes, which may apply a restoring force to the proof mass region. MEMS accelerometers with force-feedback electrodes may be used in geophysical surveys, e.g.

Abstract: In various embodiments, a device for determining a property of a fluid may be provided. The device may include a fluid receiving structure configured to receive the fluid having a first condition. The device may further include a flow control structure coupled to the fluid receiving structure. The flow control structure may be configured to change the first condition of the fluid to a second condition. The device may further include a determination mechanism configured to determine the property of the fluid based on the second condition. The device may also include a voltage generation mechanism a voltage generation mechanism configured to generate a voltage based on the second condition.

Abstract: A fully differential microelectromechanical system (MEMS) accelerometer configured to measure Z-axis acceleration is disclosed. This may avoid some of the disadvantages in traditional capacitive sensing architectures—for example, less sensitivity, low noise suppression, and low SNR, due to Brownian noise. In one embodiment, the accelerometer comprises three silicon wafers, fabricated with electrodes forming capacitors in a fully differential capacitive architecture. These electrodes may be isolated on a layer of silicon dioxide. In some embodiments, the accelerometer also includes silicon dioxide layers, piezoelectric structures, getter layers, bonding pads, bonding spacers, and force feedback electrodes, which may apply a force to the proof mass region. Fully differential MEMS accelerometers may be used in geophysical surveys, e.g., for seismic sensing or acoustic positioning.

Abstract: In various embodiments, a device for determining a property of a fluid may be provided. The device may include a fluid receiving structure configured to receive the fluid having a first condition. The device may further include a flow control structure coupled to the fluid receiving structure. The flow control structure may be configured to change the first condition of the fluid to a second condition. The device may further include a determination mechanism configured to determine the property of the fluid based on the second condition. The device may also include a voltage generation mechanism a voltage generation mechanism configured to generate a voltage based on the second condition.