Patents by Inventor Chengming Li

Chengming Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11870003
    Abstract: A patterned epitaxial structure laser lift-off device, including a substrate, reshaping structures, a transmittance adjustment structure, a patterned epitaxial structure, gas transmission systems, an ultraviolet source, a lift-off chamber and a light entry window. The gas transmission systems are at two sides of the lift-off chamber; the light entry window is on the lift-off chamber; the ultraviolet source is above the outside of the light entry window; the patterned epitaxial structure is inside the lift-off chamber; the substrate is on the patterned epitaxial structure. The patterned epitaxial structure includes an epitaxial structure, a sapphire substrate, patterned structures, oblique interfaces and planar interfaces, several patterned structures being uniformly designed on the epitaxial structure, each of the patterned structures being a V-shaped groove structure formed by two oblique interfaces, two adjacent patterned structures being connected by means of a planar interface.
    Type: Grant
    Filed: September 21, 2018
    Date of Patent: January 9, 2024
    Inventors: Xiaofeng He, Chengming Li, Xiuping He, Jianfeng Chen
  • Publication number: 20210175388
    Abstract: A patterned epitaxial structure laser lift-off device, including a substrate, reshaping structures, a transmittance adjustment structure, a patterned epitaxial structure, gas transmission systems, an ultraviolet source, a lift-off chamber and a light entry window. The gas transmission systems are at two sides of the lift-off chamber; the light entry window is on the lift-off chamber; the ultraviolet source is above the outside of the light entry window; the patterned epitaxial structure is inside the lift-off chamber; the substrate is on the patterned epitaxial structure. The patterned epitaxial structure includes an epitaxial structure, a sapphire substrate, patterned structures, oblique interfaces and planar interfaces, several patterned structures being uniformly designed on the epitaxial structure, each of the patterned structures being a V-shaped groove structure formed by two oblique interfaces, two adjacent patterned structures being connected by means of a planar interface.
    Type: Application
    Filed: September 21, 2018
    Publication date: June 10, 2021
    Inventors: XiaoFeng HE, Chengming LI, Xiuping HE, Jianfeng CHEN
  • Publication number: 20210091280
    Abstract: Disclosed are an LED chip structure and its manufacturing method, and a mass transfer method applying the LED chip structure. The LED chip structure includes a substrate, a light emitting unit connected to the substrate, a passivation layer, an ohmic contact layer, and a metal layer formed at the junction of the light emitting unit and the substrate. The passivation layer surrounds the periphery of the light emitting unit and is connected to the metal layer, and the ohmic contact layer is covered onto the passivation layer and connected to the light emitting unit. The LED chip structure has the features of reasonable design and convenient transfer; the manufacturing method has the features of simple manufacture process, easy manufacture, and compact LED chip structure; and the mass transfer method applying the LED chip structure has the features of simple operation, easy alignment, and convenient transfer.
    Type: Application
    Filed: July 6, 2020
    Publication date: March 25, 2021
    Inventors: Chengming LI, Qi WANG, Guoyi ZHANG
  • Patent number: 6479603
    Abstract: The invention provides a process for the living free radical addition polymerization of one or more ethylenically unsaturated monomers using at least one free-radical polymerization initiator and in the presence of one or more stable N-oxyl radicals, wherein at least one stable N-oxyl radical has polymerizable double bonds. The invention additionally provides polymers obtainable by this process, having a polydispersity index PDI of from 1.0 to 1.8, and provides for the use of stable N-oxyl radicals having polymerizable double bonds in the living free radical addition polymerization of one or more different ethylenically unsaturated monomers.
    Type: Grant
    Filed: June 14, 2001
    Date of Patent: November 12, 2002
    Assignee: BASF Aktiengesellschaft
    Inventors: Yuliang Yang, Junpo He, Jizhuang Cao, Jingming Chen, Chengming Li
  • Publication number: 20020013437
    Abstract: Polymers obtainable by a process for the living free radical polymerization of one or more ethylenically unsaturated monomers with the use of at least one free radical polymerization initiator and in the presence of one or more stable N-oxyl radicals, at least one stable N-oxyl radical having polymerizable double bonds, are used for processing to give moldings, films, fibers and foams.
    Type: Application
    Filed: June 26, 2001
    Publication date: January 31, 2002
    Applicant: BASF Aktiengesellschaft
    Inventors: Graham Edmund McKee, Susanne Brinkmann-Rengel, Eric Wassner, Yulliang Yang, Chengming Li, Junpo He, Yuefei Tao, Zhongmin Wang, Jingyun Pan