Abstract: An integrated circuit package and a method of forming the same are provided. The integrated circuit package includes a photonic integrated circuit die. The photonic integrated circuit die includes an optical coupler. The integrated circuit package further includes an encapsulant encapsulating the photonic integrated circuit die, a first redistribution structure over the photonic integrated circuit die and the encapsulant, and an opening extending through the first redistribution structure and exposing the optical coupler.

Abstract: A method according to the present disclosure includes receiving a workpiece including a gate structure, a first source/drain (S/D) feature, a second S/D feature, a first dielectric layer over the gate structure, the first S/D feature, the second S/D feature, a first S/D contact over the first S/D feature, a second S/D contact over the second S/D feature, a first etch stop layer (ESL) over the first dielectric layer, and a second dielectric layer over the first ESL, forming a S/D contact via through the second dielectric layer and the first ESL to couple to the first S/D contact, forming a gate contact opening through the second dielectric layer, the first ESL, and the first dielectric layer to expose the gate structure, and forming a common rail opening adjoining the gate contact opening to expose the second S/D contact, and forming a common rail contact in the common rail opening.

Abstract: Disclosed are semiconductor packages and manufacturing method of the semiconductor packages. In one embodiment, a semiconductor package includes a substrate, a first waveguide, a semiconductor die, and an adhesive layer. The first waveguide is disposed on the substrate. The semiconductor die is disposed on the substrate and includes a second waveguide aligned with the first waveguide. The adhesive layer is disposed between the first waveguide and the second waveguide.

Abstract: A semiconductor die is provided. The semiconductor die includes a substrate having a front surface, a rear surface opposite to the front surface, and a sidewall connected between the front surface and the rear surface. The sidewall includes a first primary segment immediately connected to the front surface, a second primary segment immediately connected to the rear surface, and a middle segment between the first primary segment and the second primary segment. The slope of the second primary segment is less than the slope of the first primary segment, and the slope of the middle segment is less than the slope of the second primary segment. Each of the first primary segment, the second primary segment, and the middle segment is a flat surface having a slope greater than 0 degrees relative to a line parallel to the front surface of the substrate.

Abstract: A method for fabricating the three-dimensional comb-tooth-shaped groove array surface, the surface of the bearing is first etched with grooves having a certain depth by means of femtosecond lase, then a PTFE film is impressed and attached to the surface of the inner ring of the bearing, the position of a laser focus is adjusted to focus on the lower surface of the PTFE film, the same pit is scanned repeatedly, ripple characteristic stripes occur on the surface of the inner ring of the bearing while the film gasifies instantly under the action of laser ablation heating, a part of polymer material in the gasified part is adsorbed to a mechanical surface in each pit under the action of mechanical interlocking, and a super-oleophobic PTFE surface is obtained in each groove.

Abstract: The present invention provides a novel pan-RAF kinase inhibitor, comprising a compound of formula (I) or a pharmaceutically acceptable salt, solvate, ester, acid, metabolite or prodrug thereof. The present invention also provides a use or method of the compound of formula (I) in the treatment or prevention of a disorder related to the activity of RAF and/or RAS kinase.

Abstract: Disclosed are semiconductor packages and manufacturing method of the semiconductor packages. In one embodiment, a semiconductor package includes a substrate, a first waveguide, a semiconductor die, and an adhesive layer. The first waveguide is disposed on the substrate. The semiconductor die is disposed on the substrate and includes a second waveguide aligned with the first waveguide. The adhesive layer is disposed between the first waveguide and the second waveguide.

Abstract: A fluid immersion cooling system includes a fluid tank that contains a layer of a dual-phase coolant fluid and one or more layers of single-phase coolant fluids. The dual-phase and single-phase coolant fluids are immiscible, with the dual-phase coolant fluid having a lower boiling point and higher density than a single-phase coolant fluid. A substrate of an electronic system is submerged in the tank such that high heat-generating components are immersed at least in the layer of the dual-phase coolant fluid. Heat from the components is dissipated to the dual-phase coolant fluid to generate vapor bubbles of the dual-phase coolant fluid. The vapor bubbles rise to a layer of a single-phase coolant fluid that is above the layer of the dual-phase coolant fluid. The vapor bubbles condense to droplets of the dual-phase coolant fluid. The droplets fall down into the layer of the dual-phase coolant fluid.

Abstract: A method for sawing a semiconductor wafer is provided. The method includes sawing the semiconductor wafer with a first dicing blade to form a first opening. The semiconductor wafer includes a dicing tape and a substrate attached to the dicing tape. The first opening is formed in the upper portion of the substrate. The method also includes sawing the semiconductor wafer with a second dicing blade from the first opening to form a second opening under the first opening and in the middle portion of the substrate. The method further includes sawing the semiconductor wafer with a third dicing blade from the second opening to form a third opening under the second opening and penetrating the lower portion of the substrate, so that the semiconductor wafer is divided into two dies. The first dicing blade, the second dicing blade, and the third dicing blade have different widths.

Abstract: A device, apparatus, and method for semiconductor transfer are provided. A transfer substrate is controlled to be moved to be above the target substrate. An infrared emitting portion emits infrared signals to position a semiconductor on a target substrate. After a second magnetic portion picks up the semiconductor from the target substrate, a controller outputs a first control current to a first electromagnetic portion to cause the first electromagnetic portion to generate an electromagnetic force, to control the second magnetic portion to adjust a position of the picked-up semiconductor relative to the welding position on the target substrate, where adjusting the position of the picked up semiconductor includes horizontal adjustment.

Abstract: A sub-pixel array and a display are provided. The sub-pixel structure includes a driving module, a first selection module, a second selection module, a switch module, a first light-emitting element, and a second light-emitting element. The first selection module is configured to control conduction between the driving module and an anode of the first light-emitting element or conduction between the driving module and an anode of the second light-emitting element through a first control signal. The second selection module is configured to control grounding of a cathode of the first light-emitting element or grounding of a cathode of the second light-emitting element through a second control signal.

Abstract: A method for light-emitting element transferring includes: providing multiple light-emitting elements, each light-emitting element includes a first light-emitting unit, a substrate, and a second light-emitting unit sequentially stacked, the first light-emitting unit includes a first epitaxial structure and a first electrode group stacked on a side of the substrate, the second light-emitting unit includes a second epitaxial structure and a second electrode group stacked on another side of the substrate, and the first light-emitting unit and the second light-emitting unit have different light-emitting colors; providing a display backplane, multiple grooves are defined on the display backplane, a first pad group and a second pad group are provided on side walls of each groove; and embedding the multiple light-emitting elements into the multiple grooves in one-to-one correspondence, where the first electrode group is bonded with the first pad group, and the second electrode group is bonded with the second pad gro

Abstract: Disclosed is a display backplane, comprising a backplane, micro light-emitting diodes, a plug-in circuit board, and signal lines; a light-emitting area arranged on front surface of the backplane; a first trace area and a second trace area arranged on both opposite sides of the light-emitting area, and a third trace area arranged on one side of the light-emitting area and between the opposite sides; the third trace area is arranged between the first trace area and the second trace area; first signal lines are routed from the first trace area and the second trace area and are electrically coupled to the plug-in circuit board through the third trace area, second signal lines routed along the back surface from the first trace area and the second trace area are arranged on the third trace area in a winding manner. A display device and a tiled display device are also disclosed.

Abstract: The present disclosure relates to a display panel and a method for manufacturing the same. The method includes the following. A first adhesive layer and a second adhesive layer are disposed sequentially on a surface of a driving substrate, and the first adhesive layer includes conductive particles. Multiple light emitting units arranged in an array are adhered to one side of the second adhesive layer away from the driving substrate. The second adhesive layer is semi-cured. The first adhesive layer and the second adhesive layer are cured, and the multiple light emitting units are electrically connected with the driving substrate through the conductive particles.

Abstract: A sub-pixel array and a display are provided. The sub-pixel structure includes a driving module, a first selection module, a second selection module, a switch module, a first light-emitting element, and a second light-emitting element. The first selection module is configured to control conduction between the driving module and an anode of the first light-emitting element or conduction between the driving module and an anode of the second light-emitting element through a first control signal. The second selection module is configured to control grounding of a cathode of the first light-emitting element or grounding of a cathode of the second light-emitting element through a second control signal.

Abstract: A device, apparatus, and method for semiconductor transfer are provided. A transfer substrate is controlled to be moved to be above the target substrate. An infrared emitting portion emits infrared signals to position a semiconductor on a target substrate. After a second magnetic portion picks up the semiconductor from the target substrate, a controller outputs a first control current to a first electromagnetic portion to cause the first electromagnetic portion to generate an electromagnetic force, to control the second magnetic portion to adjust a position of the picked-up semiconductor relative to the welding position on the target substrate, where adjusting the position of the picked up semiconductor includes horizontal adjustment.

Abstract: A pixel array comprise a green pixel comprising a first green optical filter and a first clear filter, a red pixel comprising a red optical filter and a first special filter, a blue pixel comprising a blue optical filter and a second special filter, and an IR pixel comprising an IR optical filter and one of a second green optical filter and a second clear filter, where the first special filter suppresses a transmission of IR at a stopband centered at 850 nm at a first IR minimum transmission, and the second special filter suppresses a transmission of IR at the stopband centered at 850 nm at a second IR minimum transmission, and where the first minimum IR transmission is different from the second minimum IR transmission.

Abstract: A pixel array comprise a green pixel comprising a first green optical filter and a first clear filter, a red pixel comprising a red optical filter and a first special filter, a blue pixel comprising a blue optical filter and a second special filter, and an IR pixel comprising an IR optical filter and one of a second green optical filter and a second clear filter, where the first special filter suppresses a transmission of IR at a stopband centered at 850 nm at a first IR minimum transmission, and the second special filter suppresses a transmission of IR at the stopband centered at 850 nm at a second IR minimum transmission, and where the first minimum IR transmission is different from the second minimum IR transmission.

Abstract: An optical film and an autostereoscopic 3D display using the same are provided. The optical film includes a concave lens layer and a birefringence layer. The concave lens layer has plurality of concaves and a presumed refractive index. The birefringence layer overlaps the concave lens layer and includes a plurality of liquid crystal units filled and cured in the concaves. The birefringence layer has a short axis refractive index. The presumed refractive index is between 100.1%-102.8% of the short axis refractive index. The autostereoscopic 3D display includes the optical film, a liquid crystal switch module, and a display panel module. The liquid crystal switch module is disposed on one side of the optical film. The display panel module is disposed on one side of the liquid crystal switch module opposite to the optical film and has a display surface facing the liquid crystal switch module.

Abstract: An optical film and an autostereoscopic 3D display using the same are provided. The optical film includes a concave lens layer and a birefringence layer. The concave lens layer has plurality of concaves and a presumed refractive index. The birefringence layer overlaps the concave lens layer and includes a plurality of liquid crystal units filled and cured in the concaves. The birefringence layer has a short axis refractive index. The presumed refractive index is between 100.1%-102.8% of the short axis refractive index. The autostereoscopic 3D display includes the optical film, a liquid crystal switch module, and a display panel module. The liquid crystal switch module is disposed on one side of the optical film. The display panel module is disposed on one side of the liquid crystal switch module opposite to the optical film and has a display surface facing the liquid crystal switch module.