Patents by Inventor Chengtao R. Yu

Chengtao R. Yu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9047902
    Abstract: A method and system for providing a touchdown sensor for use in disk drive is described. The touchdown sensor includes a seed layer, a sensor layer on the seed layer, and a capping layer. The sensor layer includes NiFe. In some embodiments, at least one of the seed layer and the capping layer promote stability and performance of the sensor layer.
    Type: Grant
    Filed: June 15, 2011
    Date of Patent: June 2, 2015
    Assignee: Western Digital (Fremont), LLC
    Inventors: Chengtao R. Yu, Yunfei Li, Yunfei Ding, Ying Hong
  • Patent number: 8837081
    Abstract: A method and system provide a touchdown sensor for use in disk drive. The touchdown sensor includes a sensor layer including a plurality of magnetic layers interleaved with at least one nonmagnetic layer. The plurality of magnetic layers are magnetically coupled and single domain. Further, the sensor has a temperature coefficient of resistivity (TCR) of at least 0.15%/° C.
    Type: Grant
    Filed: December 6, 2011
    Date of Patent: September 16, 2014
    Assignee: Western Digital (Fremont), LLC
    Inventors: Chengtao R. Yu, Dehua Han, Ying Hong, Feng Liu, Laurence L. Chen, Zhanjie Li, Zhigang Bai, Yu Lo, Yunfei Ding
  • Patent number: 8582241
    Abstract: A method and system for providing a magnetic read transducer is described. The magnetic recording transducer includes a write pole, a nonmagnetic gap, a magnetic seed layer, a trailing shield and coil(s) that energize the write pole. The write pole is configured to write to a media. The nonmagnetic gap is between the write pole and the magnetic seed layer. The magnetic seed layer includes a high moment layer and a magnetic buffer layer. The high moment layer is between the nonmagnetic gap and the magnetic buffer layer. The high moment layer has a saturation magnetization greater than 2.3 T and a first corrosion potential. The magnetic buffer layer has a second corrosion potential less than the first corrosion potential. The magnetic seed layer is between the trailing shield and the nonmagnetic gap layer. The magnetic buffer layer is between the trailing shield and the high moment layer.
    Type: Grant
    Filed: May 23, 2012
    Date of Patent: November 12, 2013
    Assignee: Western Digital (Fremont), LLC
    Inventors: Chengtao R. Yu, Dehua Han, Ying Hong, Feng Liu, Bo Zhang, Tao Pan