Abstract: Embodiments of the present invention provide methods for forming a hardened and roughened ceramic component. Specific steps include forming a sintered ceramic component, texturing the surface of the sintered ceramic component, and firing the component to harden it. The resulting ceramic component may have a textured surface, and in a specific embodiment, the textured surface has a roughness of about 100 to about 2000 ?in Ra.

Abstract: In one embodiment of the invention, a bonding material is used to bond a substitute substrate to the LED, wherein the bonding material does not including gold or tin. The bonding material preferably includes gallium (Ga), such as a combination of Ga and Al or Cu. This bonding material has high thermal conductivity, high strength, high temperature stability and is low cost. In another embodiment of the invention, the substitute substrate is first thinned before it is bonded to the LED structure, so that the substitute substrate is flexible and conforms to the shape of the LED structure. In yet another embodiment of the invention, an apparatus is used for bonding a substitute substrate to a LED which includes a plurality of semiconductor epitaxial layers, said semiconductor epitaxial layers having been grown on the growth substrate so that said semiconductor epitaxial layers are curved in shape.

Abstract: In one embodiment of an epitaxial LED device, a buffer layer (e.g. dielectric layer) between the current spreading layer and the substitute substrate includes a plurality of vias and has a refractive index that is below that of the current spreading layer. A reflective metal layer between the buffer layer and the substitute substrate is connected to the current spreading layer through the vias in the buffer layer. The buffer layer separates the current spreading layer from the reflective metal layer. In yet another embodiment, stress management is provided by causing or preserving stress, such as compressive stress, in the LED so that stress in the LED is reduced when it experiences thermal cycles.

Abstract: In one embodiment of the invention, a bonding material is used to bond a substitute substrate to the LED, wherein the bonding material does not including gold or tin. The bonding material preferably includes gallium (Ga), such as a combination of Ga and Al or Cu. This bonding material has high thermal conductivity, high strength, high temperature stability and is low cost. In another embodiment of the invention, the substitute substrate is first thinned before it is bonded to the LED structure, so that the substitute substrate is flexible and conforms to the shape of the LED structure. In yet another embodiment of the invention, an apparatus is used for bonding a substitute substrate to a LED which comprises a plurality of semiconductor epitaxial layers, said semiconductor epitaxial layers having been grown on the growth substrate so that said semiconductor epitaxial layers are curved in shape.

Abstract: In one embodiment of an epitaxial LED device, a buffer layer (e.g. dielectric layer) between the current spreading layer and the substitute substrate comprises a plurality of vias and has a refractive index that is below that of the current spreading layer. A reflective metal layer between the buffer layer and the substitute substrate is connected to the current spreading layer through the vias in the buffer layer. The buffer layer separates the current spreading layer from the reflective metal layer. In yet another embodiment, stress management is provided by causing or preserving stress, such as compressive stress, in the LED so that stress in the LED is reduced when it experiences thermal cycles.

Abstract: A soft solder flowing into the recesses of a semiconductor thin film LED provides: (a) increased bonding strength and better mechanical durability, (b) improved heat dissipation, (c) enhanced light extraction when the LED film is bonded to a new carrier. Annealing localized islands of absorbing metal creates an ohmic contact. Those isolated islands are inter-connected by a layer of a highly reflective metal. This design enables a significant absorption reduction within the LED device and leads to a significant improvement of light extraction. Additionally, the light extraction efficiency of an isotropic light emitting device is improved via surface shaping of the device by a 2D-array of micro-lenses and photonic band gap structure. For manufacturability purpose the making of micron-size lenses of the surface of the chip may preferably be performed as a final step, preferably with optical lithography.

Abstract: The invention relates to methods for treating ceramic surfaces to decrease their wettability by aqueous solutions. One method involves polishing the ceramic surface until wettability is decreased, and a second method involves a silane heat treatment. Both methods can be used to produce ceramic supports for IEF and electrophoresis gels, as well as microarray plates.

Abstract: The invention relates to methods for treating ceramic surfaces to decrease their wettability by aqueous solutions. One method involves polishing the ceramic surface until wettability is decreased, and a second method involves a silane heat treatment. Both methods can be used to produce ceramic supports for IEF and electrophoresis gels, as well as microarray plates.

Abstract: The invention relates to the utilization of doped alumina for static charge sensitive applications, and to methods for making and using the same, e.g., for varying the electrical conductivity of alumina by doping with an appropriate transition metal oxide and subsequently heating to high temperatures in a reducing environment. This treatment allows the electrical conductivity to be tailored and thus provides a cost effective means for producing components with controlled resistivity.

Abstract: The present invention relates to the formation of a macrocomposite body by spontaneously infiltrating a permeable mass of filler material or a preform with molten matrix metal and bonding the spontaneously infiltrated material to at least one second material such as a ceramic or ceramic containing body and/or a metal or metal containing body. Particularly, an infiltration enhancer and/or infiltration enhancer precursor and/or infiltrating atmosphere are in communication with a filler material or a preform, at least at some point during the process, which permits molten matrix metal to spontaneously infiltrate the filler material or preform. Moreover, prior to infiltration, the filler material or preform is placed into contact with at least a portion of a second material such that after infiltration of the filler material or preform, the infiltrated material is bonded to the second material, thereby forming a sealable electronic package.