Abstract: Described are a method for suppressing overshoot of an output voltage or output current, a charging device, and a medium. The method for suppressing the overshoot of the output voltage or output current includes the following. A loop in an open-loop state in a closed-loop control circuit is determined. A wave-sending control value output by the closed-loop control circuit at a present beat is obtained. The wave-sending control value output at the present beat is assigned to an open-loop output value at the present beat, where the open-loop output value is an output value of the loop in the open-loop state. An open-loop output value of a loop in the open-loop state at a next beat is calculated by using an assigned open-loop output value at the present beat.

Abstract: A method for controllably making catalysts with at least one metallic surface state, that includes: a) identifying all the topological insulators in the ICSD, b) calculating the Real Space Invariants of the valence bands for all these topological insulators in order to c) identify in all these topological insulators the Wyckoff Positions where the irreducible Wannier Charge Centers (WCCs) are localized, and then d) selecting as potentially catalytic active compound a topological insulator in which the position of WCCs is not occupied by any atom; e) synthesizing a crystal of the selected potentially catalytic active compound either so that it is grown in a predefined crystallographic direction (characterized by its Miller indices (h,k,l)) which exposes the metallic surface state; or cutting the crystal in a predefined crystallographic direction (characterized by its Miller indices (h,k,l)), so that the metallic surface state is exposed when ( ( { ( h , k , l ) · ( x - X j , y -

Abstract: The present invention discloses a type of high figure of merit p-type FeNbHfSb thermoelectric material, whose composition is FeNb1-xHfxSb, wherein x=0.06˜0.2. The present invention also discloses the method to prepare these p-type FeNbHfSb thermoelectric materials. The ingots with nominal composition FeNb1-xHfxSb are prepared by levitation melting of stoichiometric amounts of Fe, Nb, Hf and Sb under an argon atmosphere. The obtained ingots are mechanically milled to get submicron-scale powders. The obtained powders are compacted by spark plasma sintering to obtain the final bulk p-type FeNbHfSb thermoelectric materials. The compositional elements of these p-type FeNbHfSb thermoelectric materials are abundant in the earth crust. The p-type thermoelectric materials also shows good high temperature stability and the preparation method are simple and high-yield. Therefore, the industrial production cost would be relatively cheap. The maximum zT value of the p-type thermoelectric materials is ˜1.

Abstract: A thermoelectric half-Heusler material comprising niobium (Nb), iron (Fe) and antimony (Sb) wherein the material comprises grains having a mean grain size less than one micron. A method of making a nanocomposite half-Heusler thermoelectric material includes melting constituent elements of the thermoelectric material to form an alloy of the thermoelectric material, comminuting (e.g., ball milling) the alloy of the thermoelectric material into nanometer scale mean size particles, and consolidating the nanometer size particles to form the half-Heusler thermoelectric material comprising at least niobium (Nb), iron (Fe) and antimony (Sb) and having grains with a mean grain size less than one micron.

Abstract: The present invention discloses a type of high figure of merit p-type FeNbHfSb thermoelectric material, whose composition is FeNb1-xHfxSb, wherein x=0.06˜0.2. The present invention also discloses the method to prepare these p-type FeNbHfSb thermoelectric materials. The ingots with nominal composition FeNb1-xHfxSb are prepared by levitation melting of stoichiometric amounts of Fe, Nb, Hf and Sb under an argon atmosphere. The obtained ingots are mechanically milled to get submicron-scale powders. The obtained powders are compacted by spark plasma sintering to obtain the final bulk p-type FeNbHfSb thermoelectric materials. The compositional elements of these p-type FeNbHfSb thermoelectric materials are abundant in the earth crust. The p-type thermoelectric materials also shows good high temperature stability and the preparation method are simple and high-yield. Therefore, the industrial production cost would be relatively cheap. The maximum zT value of the p-type thermoelectric materials is ˜1.

Abstract: The present invention discloses a type of high figure of merit p-type FeNbTiSb thermoelectric material, whose composition is FeNb1-xTixSb, wherein x=0.06˜0.24. The present invention also discloses the method to prepare these p-type FeNbTiSb thermoelectric materials. The ingots with nominal composition FeNb1-xTixSb are prepared by levitation melting of stoichiometric amounts of Fe, Nb, Ti and Sb under an argon atmosphere. The obtained ingots are mechanically milled to get submicron-scale powders. The obtained powders are compacted by spark plasma sintering to obtain the final bulk p-type FeNbTiSb thermoelectric materials. The compositional elements of these p-type FeNbTiSb thermoelectric materials are abundant in the earth crust. The p-type thermoelectric materials also shows good high temperature stability and the preparation method are simple and high-yield. Therefore, the industrial production cost would be relatively cheap. The maximum zT value of the p-type thermoelectric materials is 1.